Infineon Technologies CY7C25652KV18-450BZXC

Overview

CY7C25652KV18-450BZXC from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 450 MHz maximum clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[35:0], BWS[3:0], and K/K inputs. It delivers 1100 MT/s DDR data transfer on separate read/write ports and operates at core VDD = 1.8 V ± 0.1 V with I/O VDDQ = 1.4–1.8 V, targeting high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C25652KV18-450BZXC datasheet, CY7C25652KV18-450BZXC pinout, CY7C25652KV18-450BZXC application, or CY7C25652KV18-450BZXC equivalent, key selection criteria include burst depth (four-word), echo clock (CQ/CQ) timing support, QVLD validity signaling, HSTL-compatible I/O drive, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-speed PCB routing constraints.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 19-bit address bus, latching addresses on alternate rising edges of complementary K/K clocks. Internal self-timed writes and DDR interfaces on both ports enable concurrent read/write transactions without bus turnaround.

It integrates a PLL for precise data placement, supports programmable ODT via ZQ resistor calibration and ODT pin logic level, and uses echo clocks (CQ/CQ) edge-aligned with output data to simplify high-speed capture-critical for deterministic timing in 10G/40G Ethernet switch fabric memory subsystems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3652L10BG and IS61WV204836BLL-15BLI, CY7C25652KV18-450BZXC uniquely combines 450 MHz DDR operation, integrated ODT with ZQ calibration, and echo-clock–assisted data capture-making it optimal for deterministic, high-throughput embedded memory subsystems where signal integrity and timing closure are critical.

Availability

CY7C25652KV18-450BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and defense radar signal processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C25652KV18-450BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

The QDR® II+ SRAM product line targets high-bandwidth, low-latency memory subsystems in communications infrastructure-specifically engineered to replace legacy SRAMs in packet-switched fabric, baseband, and instrumentation applications demanding concurrent access and deterministic timing.

FAQ

What is the function of the DOFF pin on CY7C25652KV18-450BZXC?

The DOFF (Data-Off) pin selects read latency mode: when asserted HIGH, the device operates with 2.5-cycle read latency; when LOW, it reverts to 1-cycle latency like QDR I. This pin is sampled at power-up and remains static during operation-it does not support dynamic switching. The 2.5-cycle mode improves timing margin in high-frequency layouts by relaxing setup/hold requirements on Q[x] outputs relative to CQ/CQ.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to an external precision resistor (175–250 Ω) tied to ground. During power-up initialization, the device measures this resistance and configures its output drivers and ODT networks to 0.2 × RQ. If ZQ is tied directly to VDDQ, minimum output impedance mode activates. Connecting ZQ to GND or leaving it unconnected violates specification and may cause undefined I/O behavior or excessive current draw.

Can CY7C25652KV18-450BZXC operate with only one clock (K) instead of K/K?

No. The device requires both K and K clocks for correct DDR operation: K clocks write data and address latching, while K clocks read data and address latching. Both clocks must be present and phase-aligned per datasheet AC timing (tSKP ≤ 50 ps). Using only K results in failed write operations, invalid address sampling, and undefined Q[x] output behavior-even if RPS/WPS are asserted-because internal registers depend on both edges for pipelining.

What happens to Q[x] outputs when RPS is deasserted mid-burst?

When RPS is deasserted during an active read burst, the current burst completes normally-the remaining words in the four-word sequence are still driven on Q[x]. After the final word, Q[x] transitions to high-impedance within one K clock cycle. QVLD goes LOW coincident with the last valid word. This ensures atomic burst completion and prevents partial-data capture errors in systems that gate RPS dynamically based on buffer status.