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Infineon Technologies CY7C25652KV18-500BZXC

Part No.:
CY7C25652KV18-500BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25652KV18-500BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,556

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Product details

Overview

CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 2.5-cycle read latency, and 550 MHz clock operation. It features separate read/write ports, DDR interfaces on both ports (1100 MHz data rate), on-die termination (ODT) for D[35:0]/BWS[3:0]/K/K inputs, and HSTL I/O supporting 1.4–1.8 V VDDQ. It is used in high-bandwidth networking line cards for packet buffering.

For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, key selection criteria include 2.5-cycle read latency timing, ODT configuration via ZQ/ODT pins, echo clock (CQ/CQ) synchronization for data capture, and depth expansion support using RPS/WPS port selects.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K and K clocks, enabling concurrent access without bus turnaround.

It uses a PLL to align echo clocks (CQ/CQ) with input clocks for precise DDR data capture, and integrates on-die termination controlled by ODT and ZQ pins to match system impedance-eliminating external resistors for D[35:0], BWS[3:0], and K/K inputs.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 organization)
Max Clock Frequency550 MHz - enables 1100 MT/s DDR data rate per port
Read Latency2.5 cycles - fixed timing for deterministic burst read scheduling
VDD / VDDQCore VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.8 V - supports dual-voltage system interfacing
Burst LengthFour-word burst - reduces address bus toggling frequency by 4× vs. single-word access
On-Die TerminationSupported on D[35:0], BWS[3:0], K/K - eliminates 72 external termination resistors
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory routing

Pinout & Package

Available in 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsSampled on rising edges of K/K; 36-bit parallel write path with byte-selectable writes via BWS[3:0]
Q[35:0]Synchronous read data outputsDriven on rising edges of K/K; four-word burst output aligned with CQ/CQ echo clocks
RPS / WPSRead/Write port select (active LOW)Enables independent port activation; allows depth expansion without external logic
BWS[3:0]Byte write select inputsEach controls 9-bit byte (D[8:0]–D[35:27]); enables partial-word writes without read-modify-write
K / KDifferential clock inputsRising edges latch all synchronous inputs; K drives read port, K drives write port
CQ / CQFree-running echo clocksPhase-aligned with K/K; simplifies high-speed data capture at receiver (e.g., FPGA IDELAY)
QVLDValid data indicator outputEdge-aligned with CQ/CQ; signals when Q[35:0] contains valid burst data
ODT / ZQODT range control / impedance calibrationODT pin selects termination range; ZQ connects to external resistor (175–350 Ω) to set output impedance to 0.2×RQ

Key Features

FeatureDesign Value
Separate read/write portsEnables true concurrent read and write operations - no bus contention or turnaround delay
Four-word burst architectureReduces effective address bus frequency by 75% - lowers routing complexity and EMI
On-die termination (ODT)Configurable termination for 44 signal lines (36 D, 4 BWS, 2 K/K) - saves PCB area and BOM cost
Echo clock outputs (CQ/CQ)Provides source-synchronous timing reference - eliminates need for board-level trace length matching
Programmable read latency modeDOFF pin selects 2.5-cycle (HIGH) or 1-cycle (LOW) latency - supports migration from QDR I systems

Applications

High-Speed Packet SwitchingTelecom Line Cards

Use Scenario: Buffering variable-length packets in 100G Ethernet switch fabric ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero-turnaround concurrent access.

Use Value: 1100 MT/s per port sustains full line-rate throughput; ODT eliminates 44 external terminators on dense backplane PCBs.

Use Scenario: Storing frame headers and metadata in OTN/framer modules.

IC Role / Device Role / Timing Role: High-coherency memory for real-time header lookup and modification.

Use Value: Full data coherency ensures most current values are always read; 2.5-cycle latency meets SONET/SDH jitter budgets.

Network Processor OffloadTest Equipment Pattern Memory

Use Scenario: Accelerating deep packet inspection in multi-core NPU subsystems.

IC Role / Device Role / Timing Role: Shared buffer between parser and classifier engines with independent read/write arbitration.

Use Value: Separate RPS/WPS enables lock-free concurrent access; burst reads reduce parser engine address generation overhead.

Use Scenario: Storing stimulus/response vectors in high-speed ATE pattern generators.

IC Role / Device Role / Timing Role: Deterministic-latency memory for synchronized waveform playback and capture.

Use Value: Fixed 2.5-cycle read latency enables cycle-accurate test vector alignment; QVLD pin validates data validity per burst.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36120L10BGQDR IV architecture; 667 MHz max clock; 1-cycle read latency only; no DOFF pin for latency selectionRequires redesign for latency-critical timing paths; lacks 2.5-cycle mode for QDR II+ compatibilityChoose only if migrating to newer QDR IV ecosystem and 1-cycle latency suffices
ISSI IS61WV102432BLL-15BLIAsynchronous SRAM; 15 ns access time; no DDR interface, no ODT, no echo clocksCannot support >400 MB/s sustained bandwidth; requires external termination and careful trace tuningSelect only for cost-sensitive, lower-bandwidth control-plane buffers where timing margin is ample

Compared with IDT72T36120L10BG and IS61WV102432BLL-15BLI, CY7C25652KV18 uniquely delivers 2.5-cycle latency configurability, integrated ODT across 44 pins, and echo clocks for simplified high-speed capture-making it optimal for QDR II+ legacy upgrades and 100G+ infrastructure designs requiring deterministic timing and layout efficiency.

Availability

CY7C25652KV18 is available at Aetrix Electronics and suitable for high-speed packet switching, telecom line cards, network processor offload, and test equipment pattern memory requiring stable component supply and long-term lifecycle support.

Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C25652KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in networking and telecom infrastructure where concurrent read/write bandwidth and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C25652KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency (QDR II+ mode); when LOW, it reverts to 1-cycle latency (QDR I compatibility mode). This pin is sampled at power-up and remains static during operation-no runtime switching is supported.

How does on-die termination (ODT) work on CY7C25652KV18?

ODT is enabled via the ODT pin and calibrated using an external resistor on the ZQ pin. A LOW on ODT selects low-range termination (~175–350 Ω), while HIGH selects high-range (~175–250 Ω). The device applies matched termination to D[35:0], BWS[3:0], and K/K inputs-reducing stub reflections and eliminating 44 discrete resistors.

Can CY7C25652KV18 be used with a 1.5 V VDDQ supply?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, HSTL Class I output drive strength is maintained, and AC timing parameters (e.g., tAC, tHZ) remain within spec per the datasheet's 1.5 V operating condition tables-enabling interoperability with 1.5 V FPGA I/O banks.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, phase-aligned copies of K and K clocks, respectively. They provide a source-synchronous timing reference at the receiver (e.g., FPGA input register), allowing precise data capture without requiring tight PCB trace length matching. QVLD is edge-aligned with CQ/CQ to indicate valid data windows.

CY7C25652KV18-500BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25652KV18-500BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C25652KV18-500BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C25652KV18-500BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25652KV18-500BZXC is usually 5 days.

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All CY7C25652KV18-500BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25652KV18-500BZXC meets industry standards.

7.What is the process for return or replacement of CY7C25652KV18-500BZXC?

All CY7C25652KV18-500BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25652KV18-500BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25652KV18-500BZXC part is unused and in its original packaging.

Return procedure for CY7C25652KV18-500BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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