Infineon Technologies CY7C25652KV18-500BZXC
- Part No.:
- CY7C25652KV18-500BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25652KV18-500BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,556
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Product details
Overview
CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 2.5-cycle read latency, and 550 MHz clock operation. It features separate read/write ports, DDR interfaces on both ports (1100 MHz data rate), on-die termination (ODT) for D[35:0]/BWS[3:0]/K/K inputs, and HSTL I/O supporting 1.4–1.8 V VDDQ. It is used in high-bandwidth networking line cards for packet buffering.
For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, key selection criteria include 2.5-cycle read latency timing, ODT configuration via ZQ/ODT pins, echo clock (CQ/CQ) synchronization for data capture, and depth expansion support using RPS/WPS port selects.
Technical Context
The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K and K clocks, enabling concurrent access without bus turnaround.
It uses a PLL to align echo clocks (CQ/CQ) with input clocks for precise DDR data capture, and integrates on-die termination controlled by ODT and ZQ pins to match system impedance-eliminating external resistors for D[35:0], BWS[3:0], and K/K inputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR data rate per port |
| Read Latency | 2.5 cycles - fixed timing for deterministic burst read scheduling |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.8 V - supports dual-voltage system interfacing |
| Burst Length | Four-word burst - reduces address bus toggling frequency by 4× vs. single-word access |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates 72 external termination resistors |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory routing |
Pinout & Package
Available in 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Sampled on rising edges of K/K; 36-bit parallel write path with byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of K/K; four-word burst output aligned with CQ/CQ echo clocks |
| RPS / WPS | Read/Write port select (active LOW) | Enables independent port activation; allows depth expansion without external logic |
| BWS[3:0] | Byte write select inputs | Each controls 9-bit byte (D[8:0]–D[35:27]); enables partial-word writes without read-modify-write |
| K / K | Differential clock inputs | Rising edges latch all synchronous inputs; K drives read port, K drives write port |
| CQ / CQ | Free-running echo clocks | Phase-aligned with K/K; simplifies high-speed data capture at receiver (e.g., FPGA IDELAY) |
| QVLD | Valid data indicator output | Edge-aligned with CQ/CQ; signals when Q[35:0] contains valid burst data |
| ODT / ZQ | ODT range control / impedance calibration | ODT pin selects termination range; ZQ connects to external resistor (175–350 Ω) to set output impedance to 0.2×RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent read and write operations - no bus contention or turnaround delay |
| Four-word burst architecture | Reduces effective address bus frequency by 75% - lowers routing complexity and EMI |
| On-die termination (ODT) | Configurable termination for 44 signal lines (36 D, 4 BWS, 2 K/K) - saves PCB area and BOM cost |
| Echo clock outputs (CQ/CQ) | Provides source-synchronous timing reference - eliminates need for board-level trace length matching |
| Programmable read latency mode | DOFF pin selects 2.5-cycle (HIGH) or 1-cycle (LOW) latency - supports migration from QDR I systems |
Applications
| High-Speed Packet Switching | Telecom Line Cards |
|---|---|
Use Scenario: Buffering variable-length packets in 100G Ethernet switch fabric ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero-turnaround concurrent access. Use Value: 1100 MT/s per port sustains full line-rate throughput; ODT eliminates 44 external terminators on dense backplane PCBs. | Use Scenario: Storing frame headers and metadata in OTN/framer modules. IC Role / Device Role / Timing Role: High-coherency memory for real-time header lookup and modification. Use Value: Full data coherency ensures most current values are always read; 2.5-cycle latency meets SONET/SDH jitter budgets. |
| Network Processor Offload | Test Equipment Pattern Memory |
Use Scenario: Accelerating deep packet inspection in multi-core NPU subsystems. IC Role / Device Role / Timing Role: Shared buffer between parser and classifier engines with independent read/write arbitration. Use Value: Separate RPS/WPS enables lock-free concurrent access; burst reads reduce parser engine address generation overhead. | Use Scenario: Storing stimulus/response vectors in high-speed ATE pattern generators. IC Role / Device Role / Timing Role: Deterministic-latency memory for synchronized waveform playback and capture. Use Value: Fixed 2.5-cycle read latency enables cycle-accurate test vector alignment; QVLD pin validates data validity per burst. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | QDR IV architecture; 667 MHz max clock; 1-cycle read latency only; no DOFF pin for latency selection | Requires redesign for latency-critical timing paths; lacks 2.5-cycle mode for QDR II+ compatibility | Choose only if migrating to newer QDR IV ecosystem and 1-cycle latency suffices |
| ISSI IS61WV102432BLL-15BLI | Asynchronous SRAM; 15 ns access time; no DDR interface, no ODT, no echo clocks | Cannot support >400 MB/s sustained bandwidth; requires external termination and careful trace tuning | Select only for cost-sensitive, lower-bandwidth control-plane buffers where timing margin is ample |
Compared with IDT72T36120L10BG and IS61WV102432BLL-15BLI, CY7C25652KV18 uniquely delivers 2.5-cycle latency configurability, integrated ODT across 44 pins, and echo clocks for simplified high-speed capture-making it optimal for QDR II+ legacy upgrades and 100G+ infrastructure designs requiring deterministic timing and layout efficiency.
Availability
CY7C25652KV18 is available at Aetrix Electronics and suitable for high-speed packet switching, telecom line cards, network processor offload, and test equipment pattern memory requiring stable component supply and long-term lifecycle support.
Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C25652KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in networking and telecom infrastructure where concurrent read/write bandwidth and signal integrity are critical.
FAQ
What is the function of the DOFF pin on CY7C25652KV18?
The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency (QDR II+ mode); when LOW, it reverts to 1-cycle latency (QDR I compatibility mode). This pin is sampled at power-up and remains static during operation-no runtime switching is supported.
How does on-die termination (ODT) work on CY7C25652KV18?
ODT is enabled via the ODT pin and calibrated using an external resistor on the ZQ pin. A LOW on ODT selects low-range termination (~175–350 Ω), while HIGH selects high-range (~175–250 Ω). The device applies matched termination to D[35:0], BWS[3:0], and K/K inputs-reducing stub reflections and eliminating 44 discrete resistors.
Can CY7C25652KV18 be used with a 1.5 V VDDQ supply?
Yes. The device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, HSTL Class I output drive strength is maintained, and AC timing parameters (e.g., tAC, tHZ) remain within spec per the datasheet's 1.5 V operating condition tables-enabling interoperability with 1.5 V FPGA I/O banks.
What is the purpose of CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned copies of K and K clocks, respectively. They provide a source-synchronous timing reference at the receiver (e.g., FPGA input register), allowing precise data capture without requiring tight PCB trace length matching. QVLD is edge-aligned with CQ/CQ to indicate valid data windows.
CY7C25652KV18-500BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 500 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25652KV18-500BZXC FAQ
1.How can I place an order for CY7C25652KV18-500BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25652KV18-500BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C25652KV18-500BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25652KV18-500BZXC is usually 5 days.
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6.How does Aetrix verify that CY7C25652KV18-500BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C25652KV18-500BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25652KV18-500BZXC meets industry standards.
7.What is the process for return or replacement of CY7C25652KV18-500BZXC?
All CY7C25652KV18-500BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25652KV18-500BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25652KV18-500BZXC part is unused and in its original packaging.
Return procedure for CY7C25652KV18-500BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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