Infineon Technologies CY7C25652KV18-500BZXI
- Part No.:
- CY7C25652KV18-500BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25652KV18-500BZXI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,474
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Product details
Overview
CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 2.5-cycle read latency, and on-die termination (ODT). It operates at 500 MHz (2.5 ns clock period), supports DDR interfaces on independent read/write ports, and delivers 1100 MT/s data transfer rate. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, key selection criteria include burst depth (four-word), ODT support on D[35:0]/BWS[3:0]/K/K inputs, echo clock (CQ/CQ) timing alignment, and 165-ball FBGA package compatibility with high-speed PCB routing constraints.
Technical Context
The CY7C25652KV18 implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its four-word burst mode reduces address bus frequency by 4× while maintaining full bandwidth, and the PLL ensures precise data placement relative to echo clocks CQ/CQ.
It uses dual input clocks (K and K) - both rising edges drive DDR transfers - and supports programmable ODT ranges via ZQ resistor tuning and ODT pin logic level. The device latches read/write addresses on alternating K edges and guarantees full data coherency across concurrent transactions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 500 MHz - enables 1100 MT/s DDR throughput on both ports |
| Read Latency | 2.5 cycles - fixed when DOFF = HIGH; allows predictable timing closure in FPGA-ASIC interconnects |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration |
| Burst Length | Four-word - reduces address bus toggling and simplifies controller address generation logic |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors, saving board area and signal integrity margin |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in telecom line cards |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Latched on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of K/K; edge-aligned with CQ/CQ for simplified capture |
| RPS / WPS | Active-low port select controls | Enable independent read/write port activation; critical for depth expansion and interleaved access |
| K / K | Dual DDR clock inputs | Both rising edges used - no "clock inversion" needed; K drives RPS/A/D, K drives WPS/A/D |
| CQ / CQ | Free-running echo clocks | Phase-aligned to K/K; provide deterministic timing reference for external latch sampling |
| QVLD | Valid data indicator output | Asserted synchronously with first valid Q[35:0] word; eliminates need for fixed delay-based capture windows |
| ODT | On-die termination control | Selects ODT range (RQ/3.33 or RQ/1.66) during power-up; floating = high-range default |
| ZQ | Impedance calibration reference | Connected to external resistor to ground; sets output driver impedance to 0.2 × RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent read/write without arbitration delay - essential for full-duplex packet buffers |
| Four-word burst architecture | Reduces address bus frequency by 75% vs. single-word mode - lowers controller logic complexity and EMI |
| On-die termination (ODT) | Configurable per-pin termination on data, byte-write, and clock inputs - eliminates 72 external resistors and improves SI margin |
| Echo clocks (CQ/CQ) | Provides system-level timing reference aligned to internal data launch - removes setup/hold uncertainty in FPGA capture logic |
| QVLD strobe | Indicates first valid data word in burst - enables dynamic capture window adjustment instead of fixed latency assumptions |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches with line-rate forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler; QVLD and CQ enable cycle-accurate data capture at 1100 MT/s. Use Value: Concurrent read/write eliminates serialization bottlenecks, enabling full 10G/25G/40G line-rate performance without external arbitration logic. | Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) with sub-nanosecond timing resolution. IC Role / Device Role / Timing Role: High-bandwidth acquisition memory interfacing directly to ADC/DAC controllers; ODT and echo clocks ensure signal integrity at 500 MHz clock domain. Use Value: Eliminates external termination and simplifies layout, reducing jitter-induced sampling errors in precision measurement systems. |
| Baseband Processing in 5G Radio Units | FPGA Co-Processing Cache |
Use Scenario: Temporary storage of IQ data streams between digital front-end (DFE) and baseband processing units in massive MIMO radio heads. IC Role / Device Role / Timing Role: Low-latency, coherent memory for real-time FFT/IFFT pipeline staging; 2.5-cycle latency matches FPGA pipeline stages. Use Value: Full data coherency and burst mode reduce memory controller overhead, improving spectral efficiency and reducing processing latency. | Use Scenario: Off-chip cache for FPGA-accelerated compute engines handling video encoding or AI inference kernels. IC Role / Device Role / Timing Role: High-throughput scratchpad memory accessed concurrently by multiple AXI masters; RPS/WPS enable independent port arbitration. Use Value: Separation of read/write paths avoids contention, increasing effective bandwidth beyond single-port SRAM limits by >2×. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | QDR IV architecture; 667 MHz max; 1.5 V core; no ODT on clocks | Higher speed but requires external clock termination; less flexible voltage scaling | Prefer when system demands >550 MHz operation and can accommodate tighter timing margins |
| ISSI IS61WV102432BLL-10BLI | Asynchronous SRAM; 1024K × 32; 10 ns access; no DDR or burst | No concurrent ports; no echo clocks or QVLD; lower bandwidth (~160 MB/s vs. ~7.9 GB/s) | Only suitable for legacy designs where QDR timing complexity is prohibitive and bandwidth < 1 GB/s suffices |
Compared with IDT72T36120L10BG and IS61WV102432BLL-10BLI, the CY7C25652KV18 uniquely balances 500 MHz DDR bandwidth, on-die termination, and deterministic echo-clock timing - making it optimal for new high-speed networking and test equipment designs requiring robust signal integrity and low-latency concurrency.
Availability
CY7C25652KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, baseband processing in 5G radio units, and FPGA co-processing cache requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The QDR® II+ SRAM product line was designed specifically for ultra-low-latency, high-bandwidth applications in networking infrastructure and test instrumentation where deterministic timing and concurrent access are mandatory.
FAQ
What is the function of the DOFF pin on CY7C25652KV18?
The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, the device operates with 2.5-cycle read latency; when LOW, it reverts to 1-cycle latency like QDR I. This pin is sampled at power-up and determines internal pipeline configuration - it cannot be changed dynamically during operation.
How does the ZQ pin calibrate output impedance?
The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground. During power-up initialization, the device measures this resistance and configures its output drivers to deliver 0.2 × RQ impedance (e.g., 48 Ω for 240 Ω ZQ). Direct connection to VDDQ enables minimum impedance mode; grounding or leaving unconnected is prohibited.
Can CY7C25652KV18 be used with a single-ended clock source?
No - the device requires true differential K/K clock inputs. Both signals must toggle with defined voltage thresholds and timing skew < 50 ps. Using a single-ended source with passive inversion violates AC timing specifications and risks metastability in internal clock domain crossing logic.
What happens to Q[35:0] when RPS is deasserted?
When RPS is deasserted (HIGH), the read port is deselected and Q[35:0] drivers enter high-impedance (tri-state) mode on the next rising edge of K. Pending read bursts complete before tri-state activation, ensuring no partial data corruption. QVLD goes LOW simultaneously with output disable.
CY7C25652KV18-500BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 500 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25652KV18-500BZXI FAQ
1.How can I place an order for CY7C25652KV18-500BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25652KV18-500BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25652KV18-500BZXI reliable?
The price and inventory of CY7C25652KV18-500BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25652KV18-500BZXI is usually 5 days.
3.What payment methods are accepted for CY7C25652KV18-500BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25652KV18-500BZXI transactions.
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4.How is shipping managed for CY7C25652KV18-500BZXI?
CY7C25652KV18-500BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C25652KV18-500BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25652KV18-500BZXI?
For technical support, including CY7C25652KV18-500BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25652KV18-500BZXI requirements.
6.How does Aetrix verify that CY7C25652KV18-500BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C25652KV18-500BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25652KV18-500BZXI meets industry standards.
7.What is the process for return or replacement of CY7C25652KV18-500BZXI?
All CY7C25652KV18-500BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25652KV18-500BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25652KV18-500BZXI part is unused and in its original packaging.
Return procedure for CY7C25652KV18-500BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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