Infineon Technologies CY7C25652KV18-550BZXC

Overview

CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[35:0], BWS[3:0], and K/K inputs. It delivers 1100 MT/s data rate via DDR interfaces on independent read/write ports and operates at core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, targeting high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, this device is selected for systems requiring concurrent read/write access, precise echo-clock–based data capture, and impedance-matched HSTL signaling without external termination resistors.

Technical Context

The CY7C25652KV18 implements a synchronous pipelined architecture with physically separate read and write data paths, enabling true concurrency-reads and writes may occur simultaneously without bus turnaround. Its four-word burst transfers 144 bits per read or write cycle, latching addresses on alternating rising edges of complementary K/K clocks.

It integrates a PLL for accurate data placement, echo clocks (CQ/CQ) aligned to output data for simplified high-speed capture, and a programmable ODT controller tied to ZQ and ODT pins to set output impedance to 0.2 × RQ. The DOFF pin selects between 2.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, preserving backward compatibility with QDR I systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and ISSI IS61WV102432ALL, the CY7C25652KV18 uniquely combines 72-Mbit density, 550 MHz QDR II+ concurrency, integrated ODT, and echo-clock timing - making it the only choice for space-constrained, high-coherency telecom buffer designs requiring <10 ns read-to-write turnaround.

Availability

CY7C25652KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric, telecom baseband processing, and test equipment memory subsystems requiring stable component supply across extended product lifecycles.

Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II+ SRAM product line was engineered specifically for deterministic, low-latency, high-bandwidth buffering in networking infrastructure - emphasizing concurrent access, signal integrity at >500 MHz, and system-level integration simplicity.

FAQ

What is the function of the DOFF pin on CY7C25652KV18?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency for optimal bandwidth in QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This selection is sampled at power-up and remains static during operation - no runtime switching is supported.

How does On-Die Termination (ODT) work on CY7C25652KV18?

ODT is enabled via the ODT pin and calibrated using an external resistor (RQ) tied between ZQ and ground. A LOW on ODT selects RQ/3.33 termination (175–350 Ω range); HIGH selects RQ/1.66 (175–250 Ω). Supported signals include all D[35:0], BWS[3:0], and K/K inputs - eliminating need for 40+ discrete 50 Ω resistors and improving signal integrity at 550 MHz.

Can CY7C25652KV18 be used with a 1.5 V VDDQ supply?

Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation per datasheet Note 1. At 1.5 V, HSTL output drive strength is reduced versus 1.8 V, but timing parameters remain valid across the full 550 MHz range - verified in AC Electrical Characteristics tables for VDDQ = 1.5 V conditions.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They are routed alongside Q[35:0] outputs to the receiving device (e.g., FPGA) to provide a dedicated, jitter-minimized strobe for capturing DDR data. This eliminates setup/hold timing uncertainty at the receiver, enabling reliable 1100 MT/s operation without complex deskew circuitry.