Infineon Technologies CY7C2565KV18-400BZXI

Overview

CY7C2565KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 400 MHz (200 MHz clock, DDR → 400 MT/s per port), supports concurrent read/write via independent ports, and uses HSTL I/O with VDD = 1.8 V and VDDQ = 1.4–1.8 V in a 165-ball FBGA package for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C2565KV18 datasheet, CY7C2565KV18 pinout, CY7C2565KV18 application, or CY7C2565KV18 equivalent, key selection criteria include its 2M × 36 data width, ODT support on D[35:0]/BWS[3:0]/K/K inputs, echo clocks (CQ/CQ) for timing margin, QVLD signal for data validity, and PLL-based DDR alignment - all critical for deterministic latency in packet buffering and switch fabric designs.

Technical Context

This device implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It latches address inputs on alternating rising edges of K and K clocks, enabling full concurrency: reads and writes may occur simultaneously to different addresses without arbitration delay.

The internal 512K × 36 memory array is organized across four sub-arrays, accessed via a single multiplexed address bus. Read latency is configurable - 2.5 cycles when DOFF = HIGH (default), or 1 cycle when DOFF = LOW - and data is valid relative to echo clocks CQ/CQ, synchronized by an internal PLL for precise 1100 Mbps DDR timing at 400 MHz operation.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C3256A-15JCIN and MT47H64M16HR-37E, CY7C2565KV18 delivers guaranteed 2.5-cycle latency, true concurrent access, and integrated ODT - making it uniquely suited for line-rate packet buffering where timing predictability and signal integrity outweigh density or cost-per-bit advantages.

Availability

CY7C2565KV18 is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom line cards, and network processor subsystems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for CY7C2565KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

CY7C2565KV18 belongs to the QDR®II+ SRAM product line, engineered specifically for deterministic-latency, high-throughput packet buffering in networking ASICs and switch fabrics.

FAQ

What is the function of the DOFF pin on CY7C2565KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency (QDR II+ mode); when LOW, it reverts to 1-cycle latency (QDR I compatibility mode). This pin is sampled at power-up and latched internally, allowing runtime reconfiguration only during reset sequences - not on-the-fly during normal operation.

How does On-Die Termination (ODT) operate on CY7C2565KV18?

ODT is enabled via dedicated ODT pin and applies programmable 50 Ω termination to D[35:0], BWS[3:0], and K/K inputs. It uses ZQ pin (connected to 240 Ω resistor) for factory-calibrated resistance tuning. ODT eliminates need for 40+ external 50 Ω resistors, reducing PCB layer count and improving signal integrity at 1100 Mbps DDR rates.

Can CY7C2565KV18 be used with a 1.5 V VDDQ supply?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, HSTL Class I output drive strength is reduced by ~15%, but setup/hold margins remain compliant per AC specs in the datasheet (Rev. *K, Table 23). System validation is recommended for marginal timing cases, especially with long traces or high fanout.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are source-synchronous echo clocks, phase-aligned with K/K and routed alongside Q[35:0] outputs. They provide a clean, low-skew strobe for capturing read data at the receiver, eliminating need for complex deskew circuitry. Their arrival at the destination matches Q[35:0] valid window, enabling reliable sampling at 1100 Mbps without external PLLs or delay lines.