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Infineon Technologies CY7C2565KV18-450BZC

Part No.:
CY7C2565KV18-450BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2565KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,728

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Product details

Overview

CY7C2565KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 450 MHz with DDR interfaces on both read and write ports (900 Mbps effective data rate), supports separate independent read/write ports for concurrent transactions, and uses HSTL I/O with VDDQ = 1.4–1.8 V. It is deployed in high-bandwidth network packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C2565KV18 datasheet, CY7C2565KV18 pinout, CY7C2565KV18 application, or CY7C2565KV18 equivalent, key selection criteria include burst depth compatibility, ODT support on D[35:0]/BWS[3:0]/K/K inputs, 165-ball FBGA (13 × 15 × 1.4 mm) mechanical fit, 2.5-cycle vs. 1-cycle latency mode via DOFF control, and JTAG 1149.1 test access capability.

Technical Context

This device implements a synchronous pipelined SRAM architecture with physically separated read and write data paths, eliminating bus turnaround overhead. Its dual DDR interfaces operate on rising edges of complementary K/K clocks, while echo clocks CQ/CQ align output timing to simplify high-speed capture.

The internal 512K × 36 memory array is accessed via a multiplexed 19-bit address bus latched on alternating K-clock edges. Latency mode is selected dynamically: DOFF = HIGH enables 2.5-cycle read latency; DOFF = LOW reverts to 1-cycle latency compatible with legacy QDR I systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 450 MHz - determines maximum sustained bandwidth of 3.24 GB/s (36-bit × 900 MT/s)
Read Latency Mode Selectable: 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - impacts pipeline depth and system timing margin
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.8 V - supports mixed-voltage board design with 1.5 V or 1.8 V signaling
On-Die Termination Supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors, reduces PCB routing complexity and area
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, thermally demanding SRAM applications
JTAG Support IEEE 1149.1 compliant TAP controller - enables boundary-scan testing and in-system debug without additional test fixtures

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edge of K/K; ODT enabled for signal integrity
Q[35:0] Synchronous read data output 36-bit parallel output registered to CQ/CQ; QVLD indicates valid window
A[18:0] Multiplexed address input 19-bit address latched on rising K edge for both read/write; supports full 2M-depth access
BWS[3:0] Byte write select (active low) Independent control of four 9-bit byte lanes; enables partial writes without read-modify-write
K / K Differential clock inputs Rising-edge-triggered; drives all synchronous registers; used for precise DDR timing alignment
CQ / CQ Echo clocks Output-aligned copies of K/K; simplify source-synchronous capture at receiver (e.g., FPGA IDELAY)
DOFF Latency mode control HIGH → 2.5-cycle read latency; LOW → 1-cycle latency (QDR I compatibility mode)
QVLD Data validity indicator Asserted one cycle before first valid Q[35:0] word; eliminates need for fixed delay-based sampling
ODT On-die termination enable Active HIGH; enables ODT on D[35:0], BWS[3:0], and K/K pins simultaneously
TMS/TCK/TDI/TDO JTAG test interface Full IEEE 1149.1 boundary-scan support for production test and diagnostics

Key Features

Feature Design Value
Separate read/write data ports Enables true concurrent read and write operations - no bus arbitration or turnaround penalty
4-word burst architecture Reduces address bus toggling frequency by 4× versus single-word access - lowers EMI and routing congestion
Programmable 2.5/1-cycle read latency DOFF pin selects between high-throughput (2.5-cycle) or low-latency (1-cycle) operation - adapts to system timing constraints
HSTL Class I inputs / variable-drive outputs Guarantees signal integrity at 450 MHz with controlled slew rates - compatible with FPGA I/O banks requiring HSTL_18
On-die termination (ODT) Eliminates 74 external 50 Ω resistors (36 D-lines + 4 BWS + 2 clocks) - saves >12 mm² PCB area and simplifies layout

Applications

Network Packet Buffer FPGA Co-Processor Memory

Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet headers and metadata in switch ASICs.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory between ingress/egress pipelines and classification engines.

Use Value: 3.24 GB/s sustained bandwidth and 2.5-cycle latency meet deterministic forwarding deadlines under worst-case traffic bursts.

Use Scenario: Off-chip memory extension for Xilinx UltraScale+ or Intel Stratix 10 FPGA-based compute accelerators.

IC Role / Device Role / Timing Role: Burst-capable scratchpad memory interfaced via native DDR PHY with echo-clock alignment.

Use Value: CQ/CQ echo clocks eliminate FPGA input deskew logic; ODT removes external termination components from dense FPGA memory interconnects.

Telecom Baseband Processing Test Equipment Data Capture

Use Scenario: Real-time symbol buffering in LTE/5G massive MIMO baseband units requiring synchronized multi-channel access.

IC Role / Device Role / Timing Role: Dual-port memory enabling simultaneous channel estimation (read) and precoding coefficient update (write).

Use Value: Independent RPS/WPS port selects allow depth expansion across multiple devices without interleaving logic - preserves per-channel timing coherence.

Use Scenario: High-fidelity waveform acquisition in digital storage oscilloscopes and protocol analyzers.

IC Role / Device Role / Timing Role: Deep buffer memory capturing parallel 36-bit ADC samples at 450 MSPS-equivalent effective rate.

Use Value: QVLD pin provides unambiguous data-valid strobe - replaces complex clock-domain crossing circuits needed with asynchronous FIFOs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2565KV18-550BZC Same 2M × 36 organization and pinout, but rated for 550 MHz operation - higher power (1310 mA max) and tighter timing margins Required where system clock exceeds 450 MHz; not drop-in for 450 MHz designs due to increased VDDQ noise sensitivity Select only if bandwidth >3.24 GB/s is mandatory and thermal/power budget allows
AS7C3256A-15JCIN Asynchronous 32 Mbit SRAM (2M × 16), no DDR, no ODT, no echo clocks - 15 ns access, single-ended CMOS I/O Suitable for non-pipelined, lower-bandwidth control-plane memory; incompatible with QDR timing or burst protocols Use only in cost-sensitive, non-real-time applications where 450 MHz DDR timing and concurrency are unnecessary

Compared with CY7C2565KV18-550BZC, this -450BZC variant trades 22% bandwidth for 15% lower operating current and relaxed PCB layout constraints; versus AS7C3256A-15JCIN, it delivers 4.5× higher effective throughput and deterministic latency but requires DDR-aware PHY design.

Availability

CY7C2565KV18 is available at Aetrix Electronics and suitable for network switching infrastructure, FPGA-accelerated computing, telecom baseband processing, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C2565KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The QDR®II+ SRAM product line was designed specifically for bandwidth-constrained, low-latency applications in networking and telecommunications infrastructure - emphasizing concurrent access, DDR efficiency, and signal integrity at multi-GHz data rates.

FAQ

What is the function of the DOFF pin on CY7C2565KV18?

The DOFF (Double-Off) pin selects read latency mode: when asserted HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency for maximum bandwidth; when LOW, it reverts to QDR I-compatible 1-cycle latency. This pin is sampled synchronously on the rising edge of the K clock during initialization and remains latched until reset or power cycle.

Can CY7C2565KV18 interface directly with Xilinx Ultrascale+ FPGA memory controllers?

Yes - its HSTL Class I inputs and variable-drive HSTL outputs match Xilinx Ultrascale+ HP I/O bank requirements. The CQ/CQ echo clocks align with IDELAYE3 input delay calibration, and QVLD provides a reliable data-valid signal for capture without manual timing closure. Full support is documented in Xilinx PG159 and UG571.

How does On-Die Termination (ODT) reduce system-level design effort?

ODT eliminates the need for 42 discrete 50 Ω termination resistors (36 D-lines + 4 BWS + 2 clocks), reducing PCB layer count, saving >12 mm² area, and removing stub-induced impedance discontinuities. It is enabled via the ODT pin and applies only during active cycles - minimizing standby power impact.

Is the 165-ball FBGA package of CY7C2565KV18 compatible with standard reflow profiles?

Yes - the Pb-free 165-ball FBGA (package code BZC) is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260°C, 60-second duration above 217°C). Thermal pad (ball ZQ) must be soldered to a dedicated thermal plane for reliable operation at 450 MHz.

CY7C2565KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2565KV18-450BZC FAQ

1.How can I place an order for CY7C2565KV18-450BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2565KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2565KV18-450BZC reliable?

The price and inventory of CY7C2565KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565KV18-450BZC is usually 5 days.

3.What payment methods are accepted for CY7C2565KV18-450BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2565KV18-450BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2565KV18-450BZC?

CY7C2565KV18-450BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2565KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2565KV18-450BZC?

For technical support, including CY7C2565KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565KV18-450BZC requirements.

6.How does Aetrix verify that CY7C2565KV18-450BZC is sourced from the original manufacturer or authorized distributors?

All CY7C2565KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C2565KV18-450BZC?

All CY7C2565KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2565KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C2565KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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