Infineon Technologies CY7C2565XV18-600BZC
- Part No.:
- CY7C2565XV18-600BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2565XV18-600BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,991
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Product details
Overview
CY7C2565XV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with four-word burst architecture, 2.5-cycle read latency (DOFF = HIGH), 600 MHz clock operation, and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs-designed for high-bandwidth packet buffering in network line cards and switch fabric controllers.
For engineers reviewing the CY7C2565XV18 datasheet, CY7C2565XV18 pinout, CY7C2565XV18 application, or CY7C2565XV18 equivalent, this device delivers deterministic 1200 MT/s DDR throughput per port, echo-clock–synchronized data capture, and depth-expansion support via independent RPS/WPS controls-critical for low-latency, concurrent memory access in telecom infrastructure.
Technical Context
The CY7C2565XV18 implements a synchronous pipelined QDR II+ architecture with physically separate read and write ports, enabling true concurrent read/write operations without bus turnaround. Its 512K × 36 internal organization uses 19 address bits, latched on alternating rising edges of K and K clocks to support full-duplex addressing.
It integrates a PLL for precise data placement, HSTL I/O with variable drive strength, and programmable ODT with dual-range selection (RQ/3.33 or RQ/1.66) controlled by the ODT pin. The QVLD signal edge-aligns with CQ/CQ to unambiguously indicate valid output data during each burst transfer.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Maximum Clock Frequency | 600 MHz - enables 1200 MT/s DDR data rate per port |
| Read Latency | 2.5 clock cycles (when DOFF = HIGH); supports QDR I mode (1-cycle) when DOFF = LOW |
| Core & I/O Voltage | VDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.6 V - allows 1.5 V I/O compatibility |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count SRAMs |
| Termination Support | On-die termination (ODT) for D[35:0], BWS[3:0], K/K - eliminates external resistors and routing complexity |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 1.266 GHz data rates |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of K/K; tristated automatically when RPS is deasserted |
| RPS / WPS | Read/Write Port Select (active LOW) | Independent control enables concurrent port activation and depth expansion |
| BWS[3:0] | Byte Write Select inputs | Each controls 9-bit segment of D[35:0]; enables partial-word writes without read-modify-write |
| K / K | Differential input clocks | Rising edges latch all synchronous inputs; K drives read path, K drives write path |
| CQ / CQ | Echo clocks (outputs) | Free-running, K/K-synchronized clocks simplify high-speed data capture timing |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ; asserts for all four burst words to confirm data validity |
| ODT | On-die termination select | Configures ODT resistance range (RQ/3.33 or RQ/1.66) during power-up initialization |
Key Features
| Feature | Design Value |
|---|---|
| Four-word burst architecture | Delivers 144-bit (36 × 4) data per read/write cycle-reduces address bus frequency by 4× vs. single-word access |
| Separate read/write ports | Enables simultaneous read and write to different addresses-eliminates bus turnaround and contention in full-duplex systems |
| Programmable ODT | Reduces PCB layer count and BOM cost by removing 72 external termination resistors (for D[35:0] + BWS[3:0] + K/K) |
| 2.5-cycle read latency mode | Optimizes throughput in high-clock-rate applications where latency tolerance permits higher bandwidth over minimal delay |
| QVLD + echo clocks (CQ/CQ) | Provides deterministic, jitter-tolerant data capture window-critical for reliable sampling at 1266 MHz DDR rates |
Applications
| Network Packet Buffering | Switch Fabric Controller Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet line cards with strict latency budgets. IC Role / Device Role / Timing Role: Dual-port SRAM serving as zero-wait-state buffer between ingress parser and egress scheduler, synchronized to system clock domain. Use Value: Concurrent read/write avoids pipeline stalls; 2.5-cycle latency mode sustains 1200 MT/s throughput while maintaining determinism under bursty traffic. |
Use Scenario: Holding forwarding table entries and queue state in modular chassis-based switches requiring real-time updates. IC Role / Device Role / Timing Role: High-bandwidth memory resource accessed by multiple ASICs via shared address/data buses with independent RPS/WPS control. Use Value: Depth expansion using port selects enables scalable memory banks; ODT simplifies interposer routing in multi-SRAM modules. |
| Telecom Baseband Processing | High-Speed Test Equipment Memory |
|
Use Scenario: Temporary storage of channelized IQ samples in LTE/5G remote radio units before FFT processing. IC Role / Device Role / Timing Role: Burst-access SRAM interfacing directly with FPGA-based digital front-end logic using HSTL I/O. Use Value: Echo clocks (CQ/CQ) align with FPGA IDELAYCTRL for sub-100ps setup/hold margin; QVLD eliminates metastability risk in capture registers. |
Use Scenario: Capturing high-fidelity waveform data streams from multi-GHz digitizers in automated test systems. IC Role / Device Role / Timing Role: Low-latency acquisition buffer feeding pattern generators and analysis engines in parallel test architectures. Use Value: Four-word burst reduces controller address overhead by 75%; 1.5 V VDDQ compatibility matches modern FPGA I/O standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120 | 36-bit QDR II+, 550 MHz max, no ODT, 165-ball FBGA, 1.8 V core only | Lacks ODT and echo clocks; requires external termination and tighter board-level timing closure | Select when legacy design reuse or cost sensitivity outweighs ODT and CQ/CQ benefits |
| ISSI IS61WV102436B | 1024K × 36 sync SRAM, 200 MHz, single-port, no burst, no ODT, 100-pin TQFP | Lower bandwidth, no concurrent access, no DDR interface-requires redesign for QDR functionality | Consider only for non-real-time buffering where latency and throughput are secondary to footprint or legacy toolchain support |
Compared with IDT72T36120 and IS61WV102436B, the CY7C2565XV18 uniquely combines 600 MHz DDR throughput, on-die termination, and echo-clock–assisted data capture-enabling simpler PCB layout and higher system-level timing margin in next-generation telecom and test equipment.
Availability
CY7C2565XV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric controller memory, telecom baseband processing, and high-speed test equipment requiring stable component supply across extended production lifecycles.
Supply support for CY7C2565XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
The QDR® II+ Xtreme SRAM product line targets ultra-low-latency, high-throughput memory subsystems in carrier-grade infrastructure-emphasizing deterministic timing, concurrent access, and signal integrity at multi-GHz data rates.
FAQ
What is the function of the DOFF pin on CY7C2565XV18?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle QDR II+ mode for maximum bandwidth; when LOW or tied to VSS, it reverts to 1-cycle QDR I mode for minimal latency. This pin is sampled at power-up and remains static during operation-no dynamic switching is supported.
How does on-die termination (ODT) work on CY7C2565XV18?
ODT applies programmable termination resistance to D[35:0], BWS[3:0], and K/K inputs using an external ZQ resistor (175–350 Ω). The ODT pin selects range: LOW sets RQ/3.33 (~53–105 Ω), HIGH sets RQ/1.66 (~106–210 Ω). Termination activates only during active input sampling windows-not continuously-to minimize power.
Can CY7C2565XV18 be used with a 1.5 V I/O supply?
Yes-VDDQ supports 1.4 V to 1.6 V, making 1.5 V nominal operation fully compliant. HSTL Class I input thresholds and variable-drive output buffers are specified across this range. Core VDD remains fixed at 1.8 V ± 0.1 V and must be independently regulated.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, K/K-synchronized output clocks that replicate input clock phase and jitter characteristics. They provide a clean, low-skew reference for capturing Q[35:0] data in receiving logic-eliminating need for complex deskew circuits and relaxing FPGA input timing constraints at 1266 MHz DDR rates.
CY7C2565XV18-600BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 600 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2565XV18-600BZC FAQ
1.How can I place an order for CY7C2565XV18-600BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2565XV18-600BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2565XV18-600BZC reliable?
The price and inventory of CY7C2565XV18-600BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565XV18-600BZC is usually 5 days.
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Once your CY7C2565XV18-600BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2565XV18-600BZC?
For technical support, including CY7C2565XV18-600BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565XV18-600BZC requirements.
6.How does Aetrix verify that CY7C2565XV18-600BZC is sourced from the original manufacturer or authorized distributors?
All CY7C2565XV18-600BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565XV18-600BZC meets industry standards.
7.What is the process for return or replacement of CY7C2565XV18-600BZC?
All CY7C2565XV18-600BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565XV18-600BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2565XV18-600BZC part is unused and in its original packaging.
Return procedure for CY7C2565XV18-600BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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