Infineon Technologies CY7C2568KV18-400BZC

Overview

CY7C2568KV18 from Cypress Semiconductor is a 72-Mbit DDR II+ synchronous SRAM configured as 4M × 18, operating at up to 400 MHz with 2.5-cycle read latency, on-die termination (ODT), and HSTL I/O interfaces. It delivers 1100 MT/s effective data rate in burst-2 DDR mode and is used in high-bandwidth networking buffers and packet-switching ASIC/FPGA interconnects.

For engineers reviewing the CY7C2568KV18 datasheet, CY7C2568KV18 pinout, CY7C2568KV18 application, or CY7C2568KV18 equivalent, key selection criteria include its 4M × 18 organization, 1.8V core / 1.4–1.8V I/O supply support, ODT-enabled DQ/BWS/K/K inputs, echo clock (CQ/CQ) timing alignment, and QVLD data-valid signaling for precise DDR capture.

Technical Context

This device implements a pipelined synchronous SRAM core with DDR II+ architecture: addresses are latched on alternating rising edges of complementary K/K clocks, while read/write data transfers occur on both rising edges-enabling true double-data-rate operation without external strobes. The internal PLL ensures accurate data placement relative to echo clocks CQ/CQ.

It supports two latency modes via DOFF pin: 2.5-cycle latency (DOFF = HIGH) for DDR II+ compliance, and 1-cycle latency (DOFF = LOW) for backward compatibility with DDR I timing. All synchronous inputs pass through K/K-controlled registers; outputs are registered and edge-aligned to CQ/CQ with QVLD assertion.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256B-15JIN and IS61WV102418BLL-10BLI, the CY7C2568KV18 delivers 12× higher effective bandwidth, eliminates 24+ external resistors via ODT, and guarantees deterministic DDR timing via CQ/CQ-making it irreplaceable in 10G+ packet-processing and FPGA-ASIC co-processing roles.

Availability

CY7C2568KV18 is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based signal processing platforms, telecom baseband modules, and industrial video infrastructure requiring stable component supply across multi-year production cycles.

Supply support for CY7C2568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C2568KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for bandwidth-constrained, low-latency interconnects between FPGAs, ASICs, and network processors in 10G+ infrastructure.

FAQ

What is the function of the DOFF pin on CY7C2568KV18?

The DOFF (Double-Data-Rate Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle DDR II+ latency; when LOW, it reverts to 1-cycle DDR I timing. This pin is sampled at power-up and remains static during operation-no runtime switching is supported. Its state directly affects tAA (address-to-data) and tRC (row cycle) timing parameters per the datasheet.

How does On-Die Termination (ODT) work on CY7C2568KV18?

ODT uses an internal switched resistor network calibrated against the external ZQ (240 Ω) reference to terminate DQ[17:0], BWS[1:0], K, and K inputs. The ODT pin selects resistance range at power-up: LOW enables ~175–350 Ω (RQ/3.33), HIGH selects higher range. ODT eliminates stub reflections and improves signal integrity without external resistors-critical for 400 MHz DDR routing.

Can CY7C2568KV18 operate with 1.5 V VDDQ?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. At 1.5 V, HSTL output drive strength is reduced but remains compliant with HSTL Class I specifications; DC and AC timing parameters (e.g., tDS, tDH, tDQSQ) must be verified per Table 22 in the datasheet for 1.5 V conditions.

What is the role of CQ and CQ pins?

CQ and CQ are echo clocks-output copies of K and K, respectively, aligned to the DQ[17:0] data edges. They provide source-synchronous timing for capturing read data, eliminating the need for board-level DQS routing and length-matching. QVLD transitions coincide with the first valid DQ word on these clocks, enabling robust latch window definition in FPGA input ISERDES blocks.