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Infineon Technologies CY7C25702KV18-500BZXC

Part No.:
CY7C25702KV18-500BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25702KV18-500BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,892

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Product details

Overview

CY7C25702KV18-500BZXC from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM with 2M × 36 organization, 500 MHz clock operation (1000 MT/s data rate), 2.5-cycle read latency (DOFF = HIGH), and on-die termination (ODT) for DQ, BWS, and K/K inputs. It delivers high-bandwidth buffering in network packet processors requiring precise DDR timing and echo-clock–synchronized data capture.

For engineers reviewing the CY7C25702KV18-500BZXC datasheet, CY7C25702KV18-500BZXC pinout, CY7C25702KV18-500BZXC application, or CY7C25702KV18-500BZXC equivalent, key selection criteria include burst depth (2-word), ODT support range (RQ/1.66 or RQ/3.33), QVLD timing alignment with CQ/CQ, HSTL I/O compatibility, and PLL-based data placement accuracy at 500 MHz.

Technical Context

This device implements a synchronous pipelined architecture where all address, control, and data signals are registered on rising edges of complementary clocks K and K. Read operations initiate on K's rising edge, output two sequential 36-bit words on alternating K/K edges, and assert QVLD edge-aligned with CQ/CQ to indicate valid data windows.

The integrated PLL ensures accurate data-eye positioning relative to echo clocks, while ODT configuration (via ODT pin and ZQ resistor) supports impedance matching for DQ[35:0], BWS[3:0], and K/K without external resistors-enabling clean signal integrity in dense memory subsystems operating up to 1000 MT/s.

Key Specifications

ParameterValue and Actual Design Meaning
Density72 Mbit (2M × 36), enabling compact high-throughput buffer storage for packet headers or frame buffers
Max Clock Frequency500 MHz - defines maximum command rate and system bandwidth ceiling
Data Rate1000 MT/s (DDR) - doubles throughput vs. single-data-rate at same clock
Read Latency2.5 cycles (DOFF = HIGH) - determines minimum read-to-read turnaround and pipeline depth
VDD / VDDQCore VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports dual-voltage board design and backward compatibility with 1.5 V systems
ODT SupportConfigurable termination for DQ[35:0], BWS[3:0], K/K - eliminates 24+ external resistors and reduces PCB routing complexity
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count DDR SRAMs in telecom modules

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
DQ[35:0]Synchronous bidirectional data bus36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads with QVLD synchronization
BWS[3:0]Byte write select (active low)Enables selective 9-bit byte writes per burst cycle; BWS0–BWS3 map to D[8:0] through D[35:27] respectively
K / KDifferential clock inputsRising edges latch all synchronous inputs and drive outputs; K used for address/control registration, both used for data transfer timing
CQ / CQEcho clock outputsFree-running clocks synchronized to K; eliminate need for external strobes to capture DDR data across multiple devices
QVLDValid data indicatorAsserted edge-aligned with CQ/CQ rising edges to mark exact window of valid DQ[35:0] data - critical for setup/hold margining
ODTOn-die termination selectConfigures ODT resistance range (RQ/1.66 or RQ/3.33) based on ZQ resistor value; floating defaults to high range
ZQImpedance calibration referenceConnects to precision external resistor (175–350 Ω) to calibrate internal ODT driver strength
LDLoad inputLatches address and R/W on K rising edge; initiates burst transaction - must meet strict setup/hold relative to K

Key Features

FeatureDesign Value
Two-word burst architectureReduces address bus toggling by 50% versus single-word access - lowers EMI and simplifies controller logic
Programmable ODT with ZQ calibrationEliminates 28 external termination resistors and associated layout area; supports dynamic impedance tuning across voltage/temperature
Edge-aligned QVLD with echo clocksRemoves need for per-device delay tuning; enables deterministic data capture across multi-SRAM stacks without skew compensation
2.5-cycle + 1-cycle dual-mode latencyDOFF pin selects between DDR II+ (2.5-cycle, high bandwidth) and DDR I (1-cycle, low latency) operation - supports mixed-system timing requirements
HSTL-compatible I/O with variable driveMeets JEDEC HSTL Class I specs; drive strength configurable via mode register - ensures signal integrity at 1000 MT/s on FR4 backplanes

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet descriptors and payload fragments in 10G/40G Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-speed burst-access SRAM acting as first-level packet buffer with deterministic 2.5-cycle read latency and echo-clock–driven data capture.

Use Value: Enables full-line-rate forwarding with zero wait states; QVLD alignment with CQ/CQ guarantees <0.5 ns data-valid uncertainty at 500 MHz clock.

Use Scenario: Frame buffering in OTN/framer-based optical transport line cards requiring low-jitter, high-reliability memory.

IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM providing burst-aligned 36-bit wide data paths synchronized to system PLL and echo clocks.

Use Value: ODT eliminates stub reflections on dense 36-bit buses; ZQ calibration maintains impedance match across -40°C to +85°C industrial temperature range.

Baseband Processing CacheTest Equipment Pattern Memory

Use Scenario: Temporary storage of channel estimation coefficients and FFT intermediate results in LTE/5G baseband FPGAs.

IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM interfacing directly to FPGA DDR I/O banks with HSTL compliance and programmable drive strength.

Use Value: Dual-mode latency (via DOFF) allows runtime switching between high-throughput (2.5-cycle) and low-latency (1-cycle) modes for adaptive algorithm scheduling.

Use Scenario: High-fidelity digital pattern generation in ATE systems requiring glitch-free, repeatable waveform playback at >500 MHz clock rates.

IC Role / Device Role / Timing Role: Deterministic burst SRAM delivering precisely timed 36-bit parallel patterns synchronized to system master clock and echo clocks.

Use Value: PLL-based data placement and QVLD signaling ensure sub-100 ps jitter on output data edges - meeting Class A ATE timing margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C25682KV18-500BZXC4M × 18 organization (72 Mbit same density); identical timing, ODT, and pinout except DQ/BWS countPreferred when 18-bit data path matches controller bus width; lower pin count for simpler routingSelect when system uses 18-bit-wide interfaces and requires identical latency/ODT features in smaller package footprint
AS7C3256A-15JCINAsynchronous 32K × 8 SRAM; no DDR, no ODT, no echo clocks; 15 ns access, 3.3 V onlyOnly suitable for non-critical, low-speed buffering where timing determinism and high bandwidth are not requiredNot a functional substitute - lacks DDR interface, burst capability, and ODT; use only in legacy designs with no timing constraints

Compared with CY7C25682KV18-500BZXC, this part offers identical performance in a 36-bit-wide configuration ideal for wide-bus controllers, while AS7C3256A-15JCIN fails to meet DDR timing, ODT, or echo-clock requirements - making it unsuitable for any application demanding deterministic 1000 MT/s operation.

Availability

CY7C25702KV18-500BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C25702KV18-500BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C25702KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where echo-clock synchronization and on-die termination reduce system-level timing closure effort.

FAQ

What is the function of the DOFF pin on CY7C25702KV18-500BZXC?

The DOFF (Double-Off) pin selects between DDR II+ and DDR I operational modes. When asserted HIGH, the device operates with 2.5-cycle read latency and full DDR II+ feature set including enhanced ODT and echo-clock alignment. When LOW, it reverts to 1-cycle latency and simplified DDR I timing - enabling runtime latency tuning without changing hardware.

How does the ZQ pin interact with the ODT feature?

The ZQ pin connects to an external precision resistor (175–350 Ω) that calibrates internal ODT driver strength. During power-up initialization, the device measures ZQ resistance and configures ODT termination values accordingly - selecting either RQ/1.66 (high range) or RQ/3.33 (low range) based on the ODT pin state. This ensures consistent impedance matching across voltage and temperature variations.

Can CY7C25702KV18-500BZXC be used without connecting the CQ/CQ pins?

No - CQ and CQ are mandatory for reliable data capture. These echo clocks are phase-aligned with internal data launch edges and serve as the timing reference for sampling DQ[35:0]. Disabling or leaving them unconnected violates the DDR II+ interface specification and will cause data capture failures, as the receiver has no deterministic strobe to align with QVLD-qualified data windows.

Is the 165-ball FBGA package of CY7C25702KV18-500BZXC compatible with CY7C25682KV18-500BZXC?

No - although both use 165-ball FBGA packages, their pinouts differ significantly. CY7C25702KV18 dedicates additional balls to DQ[35:18] and BWS[3:2], while CY7C25682KV18 routes those signals to NC/144M and NC/288M locations. Mechanical compatibility does not imply electrical or functional interchangeability; PCB layout and firmware must be redesigned for each part.

CY7C25702KV18-500BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25702KV18-500BZXC FAQ

1.How can I place an order for CY7C25702KV18-500BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C25702KV18-500BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25702KV18-500BZXC reliable?

The price and inventory of CY7C25702KV18-500BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25702KV18-500BZXC is usually 5 days.

3.What payment methods are accepted for CY7C25702KV18-500BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25702KV18-500BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C25702KV18-500BZXC?

CY7C25702KV18-500BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25702KV18-500BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25702KV18-500BZXC?

For technical support, including CY7C25702KV18-500BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25702KV18-500BZXC requirements.

6.How does Aetrix verify that CY7C25702KV18-500BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C25702KV18-500BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25702KV18-500BZXC meets industry standards.

7.What is the process for return or replacement of CY7C25702KV18-500BZXC?

All CY7C25702KV18-500BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25702KV18-500BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25702KV18-500BZXC part is unused and in its original packaging.

Return procedure for CY7C25702KV18-500BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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