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Infineon Technologies CY7C25702KV18-550BZXI

Part No.:
CY7C25702KV18-550BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25702KV18-550BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,191

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Product details

Overview

CY7C25702KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM with 2M × 36 organization, 550 MHz clock operation, 2.5-cycle read latency (DOFF = HIGH), and on-die termination (ODT) for DQ/BWS/K/K inputs. It delivers 1100 MT/s data throughput via double-data-rate interface and supports HSTL I/O with VDDQ = 1.4 V to 1.8 V - deployed in high-bandwidth networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C25702KV18 datasheet, CY7C25702KV18 pinout, CY7C25702KV18 application, or CY7C25702KV18 equivalent, key selection criteria include burst depth (2-word), echo clock (CQ/CQ) timing alignment, QVLD validity signaling, ODT configuration via ZQ/ODT pins, and FBGA-165 package compatibility with high-speed PCB routing constraints.

Technical Context

This device implements a synchronous pipelined architecture where all address, control, and data transfers are edge-aligned to K (positive) and K (negative) clocks. Read and write operations initiate on K rising edges, while data is registered on both K and K edges - enabling true DDR behavior without external strobes.

The internal 2M × 36 array is split into two 1M × 36 banks, supporting concurrent address latching and burst output. The PLL ensures precise data placement relative to echo clocks CQ/CQ, and QVLD provides cycle-accurate validity indication synchronized to CQ/CQ edges - critical for deterministic capture in multi-SRAM systems.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit / 2M × 36 - enables compact 36-bit wide memory interfaces without external width expansion logic
Max Clock Frequency 550 MHz - defines maximum sustained bandwidth of 1100 MT/s (double-data-rate)
Read Latency 2.5 cycles (DOFF = HIGH) - determines minimum read-to-read turnaround and pipeline depth in controller design
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V FPGA I/O banks
On-Die Termination Configurable ODT on DQ[35:0], BWS[3:0], K/K - eliminates 24+ external 35–75 Ω resistors and saves >12 mm² board area
Package 165-ball FBGA (13 × 15 × 1.4 mm) - matches IPC-7351B footprint for automated assembly and thermal performance up to 1.2 W
Core Supply VDD = 1.8 V ± 0.1 V - requires low-noise 1.8 V regulator with <15 mV ripple for stable SRAM core timing

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads; tri-stated automatically on deselect
K / K Differential clock inputs Edge-aligned timing references for all synchronous operations; K used for address/control latching, both used for data capture/driving
CQ / CQ Output echo clocks Free-running, phase-matched copies of K/K; enable source-synchronous data capture without per-pin delay tuning
QVLD Valid data indicator Asserted high one cycle before first valid data word; edge-aligned to CQ/CQ - eliminates need for static timing margining in FPGA capture logic
ODT On-die termination select Configures ODT resistance range at power-up: LOW → RQ/3.33 (~53–105 Ω), HIGH/floating → RQ/1.66 (~106–150 Ω)
ZQ Impedance calibration reference Connects to precision 240 Ω resistor to ground; calibrates internal ODT drivers to match PCB trace impedance within ±10%
LD Load command input Latches address and R/W state on K rising edge; initiates burst transaction - no separate chip-select required
BWS[3:0] Byte write select Four independent active-low signals controlling 9-bit byte lanes; enables partial writes without read-modify-write overhead

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% vs. single-word SRAM - lowers EMI and simplifies controller address sequencing logic
Programmable ODT with ZQ calibration Eliminates 32 external termination resistors and associated layout complexity; supports impedance matching across voltage/temperature
Edge-aligned echo clocks (CQ/CQ) Removes skew-sensitive capture circuitry in FPGA receivers - allows use of simple register-based sampling instead of IDELAY/IDELAYCTRL blocks
QVLD validity signal Provides unambiguous, cycle-accurate data readiness indication - avoids conservative timing margins and enables tighter pipeline scheduling
DOFF-configurable latency mode Switches between DDR II+ (2.5-cycle) and DDR I (1-cycle) operation - enables backward compatibility testing and latency optimization per system requirement

Applications

High-Speed Network Packet Buffer FPGA-Based Video Frame Store

Use Scenario: Storing ingress/egress Ethernet frames in 10G/25G switch ASICs with sub-10 ns access predictability.

IC Role / Device Role / Timing Role: Primary burst-access buffer interfacing directly to SerDes MAC logic via 36-bit DDR bus.

Use Value: 2.5-cycle latency + QVLD enables deterministic frame start detection; ODT removes stub reflections on 8-layer backplane traces.

Use Scenario: Holding uncompressed 4K@60fps YUV422 frames for real-time color space conversion and scaling in broadcast encoders.

IC Role / Device Role / Timing Role: Dual-port-equivalent memory accessed as 36-bit wide linear buffer with burst-aligned pixel streaming.

Use Value: Two-word burst reduces address generator complexity; CQ/CQ alignment simplifies FPGA video clock domain crossing.

PCIe Gen4 Endpoint Memory Cache Radar Signal Processing Buffer

Use Scenario: Low-latency scratchpad for NVMe controller firmware executing on embedded ARM Cortex-R cores.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory mapped behind PCIe BAR with strict TLP completion timing.

Use Value: 550 MHz clock + 1100 MT/s throughput meets PCIe Gen4 x4 payload rate; DOFF=LOW enables 1-cycle mode for critical control paths.

Use Scenario: Capturing ADC samples from phased-array radar front-ends operating at 1.2 GS/s aggregate rate.

IC Role / Device Role / Timing Role: Synchronous burst buffer feeding FFT engines with deterministic 2-word-aligned sample pairs.

Use Value: QVLD + CQ synchronization guarantees sample boundary integrity across temperature; VDDQ=1.4 V reduces dynamic power by 22% vs. 1.8 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-55BIN 550 MHz QDR IV SRAM, 2M × 36, no ODT, no QVLD, requires external termination Lacks echo clocks and validity signaling - demands more complex FPGA capture logic and board-level termination Select when legacy QDR IV ecosystem exists and board redesign for ODT/QVLD is not feasible
IS61WV204836BLL-15BLI 15 ns async SRAM, 2M × 36, parallel interface only, no DDR/burst capability Cannot support >200 MHz sustained bandwidth; lacks pipelining - unsuitable for packet/frame streaming Choose only for non-timing-critical control storage where simplicity outweighs bandwidth needs

Compared with AS7C362000B-55BIN and IS61WV204836BLL-15BLI, CY7C25702KV18 uniquely integrates ODT, QVLD, and echo clocks to reduce FPGA resource usage and PCB layer count - delivering measurable BOM and layout cost savings in volume production.

Availability

CY7C25702KV18 is available at Aetrix Electronics and suitable for high-speed network packet buffers, FPGA-based video frame stores, PCIe Gen4 endpoint caches, and radar signal processing buffers requiring stable component supply across extended industrial temperature ranges.

Supply support for CY7C25702KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems, with global R&D centers and ISO 9001-certified manufacturing.

CY7C25702KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in networking, telecom infrastructure, and real-time signal processing applications.

FAQ

What is the function of the DOFF pin on CY7C25702KV18?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to DDR I mode with 1-cycle latency. This pin is sampled at power-up and remains latched until reset - enabling runtime latency tuning without changing clocking or control logic.

How does On-Die Termination (ODT) work with the ZQ pin?

ZQ connects to an external 240 Ω resistor to ground, providing a reference for internal ODT driver calibration. During power-up initialization, the device measures ZQ resistance and configures ODT strength accordingly. ODT is enabled on DQ[35:0], BWS[3:0], and K/K inputs - eliminating need for 32 discrete termination resistors and reducing signal integrity risk on high-speed traces.

Can CY7C25702KV18 be used with a 1.5 V I/O supply?

Yes - VDDQ supports 1.4 V to 1.8 V, explicitly including 1.5 V operation. The HSTL-compatible I/O buffers maintain full timing compliance and drive strength across this range. When using 1.5 V VDDQ, ensure the ZQ resistor remains 240 Ω and that ODT configuration (via ODT pin) matches the target termination impedance for the PCB trace environment.

What is the timing relationship between QVLD and CQ/CQ?

QVLD is edge-aligned to both CQ and CQ outputs - it asserts high one clock cycle before the first valid data word appears on DQ[35:0]. This precise alignment allows FPGA logic to use CQ as the sampling clock and QVLD as a ready flag, removing setup/hold uncertainty and enabling single-register capture without IDELAY tuning.

CY7C25702KV18-550BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25702KV18-550BZXI FAQ

1.How can I place an order for CY7C25702KV18-550BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C25702KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25702KV18-550BZXI reliable?

The price and inventory of CY7C25702KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25702KV18-550BZXI is usually 5 days.

3.What payment methods are accepted for CY7C25702KV18-550BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25702KV18-550BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C25702KV18-550BZXI?

CY7C25702KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25702KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25702KV18-550BZXI?

For technical support, including CY7C25702KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25702KV18-550BZXI requirements.

6.How does Aetrix verify that CY7C25702KV18-550BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C25702KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25702KV18-550BZXI meets industry standards.

7.What is the process for return or replacement of CY7C25702KV18-550BZXI?

All CY7C25702KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25702KV18-550BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25702KV18-550BZXI part is unused and in its original packaging.

Return procedure for CY7C25702KV18-550BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C25702KV18-550BZXI Tags

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