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Infineon Technologies CY7C2642KV18-333BZXC

Part No.:
CY7C2642KV18-333BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2642KV18-333BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,941

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Product details

Overview

CY7C2642KV18-333BZXC from Infineon Technologies (formerly Cypress) is a radiation-hardened 144-Mbit QDR® II+ SRAM with 8M × 18 organization, 250 MHz clock frequency, 2.0-cycle read latency, and on-die termination (ODT). It features separate read/write ports, DDR interfaces on both ports (500 MHz data rate), and RadStop™ technology for space-grade reliability in high-radiation environments such as satellite command/data handling systems.

For engineers reviewing the CY7C2642KV18-333BZXC datasheet, CY7C2642KV18-333BZXC pinout, CY7C2642KV18-333BZXC application, or CY7C2642KV18-333BZXC equivalent, this device supports concurrent read/write transactions, echo clocks (CQ/CQ) for timing margin, QVLD for data validity indication, and JTAG 1149.1 test access - critical for avionics and defense embedded memory subsystems.

Technical Context

This QDR II+ SRAM implements dual independent ports with pipelined synchronous operation: read addresses latched on rising K edge, write addresses on rising K edge, and all data transfers synchronized to both clocks. The architecture eliminates bus turnaround by dedicating Q[17:0] outputs and D[17:0] inputs, enabling true simultaneous access.

It integrates a PLL for precise data placement, supports ODT on D[17:0], BWS[1:0], and K/K inputs, and uses DOFF pin to switch between 2.0-cycle (QDR II+) and 1.0-cycle (QDR I–compatible) read latency modes. Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V, enabling interoperability with 1.5 V and 1.8 V HSTL interfaces.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8M × 18 configuration)
Max Clock Frequency 250 MHz - enables 500 MT/s per port via DDR interface
Read Latency 2.0 clock cycles (DOFF = high) - deterministic timing for real-time buffering
Radiation Tolerance Total ionizing dose = 200 krad(Si); latchup immunity > 120 MeV·cm²/mg at 125 °C
Supply Voltages Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - matches FPGA/ASIC memory controllers
Package 165-ball Ceramic Column Grid Array (CCGA), 21 × 25 × 2.83 mm - hermetic, high-reliability packaging

Pinout & Package

165-ball Ceramic Column Grid Array (CCGA), 21 × 25 × 2.83 mm, RoHS-compliant, hermetically sealed for space and high-reliability applications.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Sampled on rising edges of K/K; 18-bit parallel input path for burst writes
Q[17:0] Synchronous read data output Driven on rising edges of K/K; tri-stated when RPS deasserted
RPS Read port select (active low) Enables read operations and Q[17:0] output drivers
WPS Write port select (active low) Enables write operations and sampling of D[17:0] and BWS[1:0]
BWS[1:0] Byte write select (active low) BWS0 controls D[8:0]; BWS1 controls D[17:9] - enables partial-word writes without read-modify-write
K / K Differential clock inputs Rising edges control all synchronous operations; K for read, K for write - eliminates skew dependency
CQ / CQ Echo clocks (outputs) Phase-aligned copies of K/K for simplified high-speed data capture in FPGA receivers
QVLD Data valid indicator Asserted one cycle before valid Q[17:0] appears - enables reliable strobing without fixed delay assumptions
DOFF Latency mode control High = 2.0-cycle QDR II+ mode; low = 1.0-cycle QDR I–compatible mode
ODT On-die termination enable Activates internal termination for D[17:0], BWS[1:0], and K/K - removes need for external resistors

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround overhead - enables sustained 100% read+write bandwidth utilization
Two-word burst architecture Reduces address bus toggling by 50% vs. single-word devices - lowers EMI and routing complexity
RadStop™ radiation hardening Qualified to 200 krad(Si) TID and >120 MeV·cm²/mg latchup immunity - certified for LEO/MEO satellite payloads
JTAG 1149.1 boundary scan Enables in-system testability and debug of memory interconnects without physical probe access
Programmable ODT Configurable termination on data, byte-select, and clock inputs - simplifies PCB layout and improves signal integrity

Applications

Spacecraft Onboard Data Handling Satellite Telemetry Buffering

Use Scenario: Real-time storage and retrieval of attitude control sensor data and command execution logs in LEO satellites.

IC Role / Device Role / Timing Role: High-bandwidth, radiation-tolerant buffer between ADC/FPGA and downlink transmitter - operates at 250 MHz with deterministic 2-cycle latency.

Use Value: Concurrent read/write avoids pipeline stalls during continuous telemetry ingestion and scheduled beacon transmission.

Use Scenario: Temporary storage of compressed image frames prior to X-band downlink in Earth observation satellites.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as frame buffer - accepts burst writes from imaging processor while feeding serialized reads to RF modulator.

Use Value: Echo clocks (CQ/CQ) and QVLD eliminate setup/hold uncertainty in high-speed FPGA-to-SRAM handshaking.

Avionics Flight Control Memory Defense Radar Signal Processing

Use Scenario: Storing time-critical flight control law coefficients and sensor fusion results in fly-by-wire systems.

IC Role / Device Role / Timing Role: Deterministic-latency memory for safety-critical control loops - powered from 1.8 V core and 1.5 V I/O rails.

Use Value: DOFF pin allows runtime switching between low-latency (1-cycle) and robust (2-cycle) modes during fault recovery sequences.

Use Scenario: Intermediate storage of digitized radar returns during pulse-Doppler processing in airborne AESA radars.

IC Role / Device Role / Timing Role: High-throughput memory interfacing with high-speed ADCs and DSPs - leveraging DDR interfaces for 1 GB/s aggregate bandwidth.

Use Value: On-die termination (ODT) reduces stub length sensitivity and maintains signal integrity across wide temperature (-55 °C to +125 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed radiation-tolerant SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2644KV18-333BZXC Same package and radiation specs; 4M × 36 organization (vs. 8M × 18); wider data bus, lower depth Better suited for 36-bit-wide datapaths (e.g., dual 18-bit channels or 32-bit + parity) Select when system bus width matches 36-bit interface and depth requirement is ≤4M words
IS61WV102418BLL-10BLI Commercial-grade 1M × 18 QDR II SRAM; no radiation hardening; 10 ns access, 100 MHz max clock Limited to ground-based or non-radiation environments; lacks RadStop™, ODT, and echo clocks Use only for cost-sensitive terrestrial prototyping where radiation tolerance is not required

Compared with CY7C2642KV18-333BZXC, the CY7C2644KV18 variant trades depth for width while retaining identical radiation performance and timing, whereas the IS61WV102418BLL offers lower cost and power but zero radiation assurance - making it unsuitable for space qualification.

Availability

CY7C2642KV18-333BZXC is available at Aetrix Electronics and suitable for spacecraft onboard data handling, satellite telemetry buffering, and avionics flight control systems requiring stable component supply across extended mission lifetimes.

Supply support for CY7C2642KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including radiation-hardened QDR SRAMs for aerospace and defense markets.

This device belongs to the RadStop™ QDR II+ SRAM product line, engineered specifically for mission-critical spaceborne systems requiring guaranteed operation under total ionizing dose and single-event effects.

FAQ

What is the function of the DOFF pin on CY7C2642KV18-333BZXC?

The DOFF (Double-Off) pin selects read latency mode: when asserted high, it enables 2.0-cycle QDR II+ operation with enhanced timing margin; when low, it reverts to 1.0-cycle QDR I–compatible timing. This pin is sampled synchronously on the K clock and allows runtime adaptation to system timing constraints without changing clock frequency or external logic.

Does CY7C2642KV18-333BZXC support JTAG boundary scan testing?

Yes, it implements IEEE 1149.1 compliant TAP controller with full boundary scan capability, including instruction register, bypass register, and boundary scan register supporting INTEST, EXTEST, and SAMPLE/PRELOAD instructions. All 165 balls are accessible via scan chain for interconnect verification and manufacturing test.

How does on-die termination (ODT) operate on this SRAM?

ODT is enabled by driving the ODT pin high, activating programmable termination resistors (typically 50 Ω) on D[17:0], BWS[1:0], and K/K inputs. Termination values are factory-trimmed and do not require external resistors, reducing PCB layer count and improving signal integrity in high-speed HSTL interfaces up to 500 MT/s.

What is the significance of the "BZXC" suffix in the part number?

The "BZXC" suffix denotes Infineon's standard space-grade marking: "B" = ceramic CCGA package, "Z" = radiation-hardened (RadStop™), "X" = extended temperature range (–55 °C to +125 °C), and "C" = fully screened and qualified per MIL-PRF-38535 Class V requirements - confirming suitability for flight-critical applications.

CY7C2642KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C2642KV18-333BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2642KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2642KV18-333BZXC reliable?

The price and inventory of CY7C2642KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2642KV18-333BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2642KV18-333BZXC?

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CY7C2642KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2642KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2642KV18-333BZXC?

For technical support, including CY7C2642KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2642KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C2642KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2642KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2642KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2642KV18-333BZXC?

All CY7C2642KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2642KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2642KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C2642KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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