Infineon Technologies CY7C2644KV18-333BZXI

Overview

CY7C2644KV18-333BZXI from Infineon Technologies (formerly Cypress) is a radiation-hardened 144-Mbit QDR® II+ SRAM with 4M × 36 organization, 250 MHz clock frequency, 2.0-cycle read latency, and on-die termination (ODT). It features separate read/write ports, DDR I/O at 500 Mbps per port, and RadStop™ technology for space-grade applications requiring latch-up immunity >120 MeV·cm²/mg and total ionizing dose tolerance up to 200 krad.

For engineers reviewing the CY7C2644KV18-333BZXI datasheet, CY7C2644KV18-333BZXI pinout, CY7C2644KV18-333BZXI application, or CY7C2644KV18-333BZXI equivalent, this page provides verified timing parameters, validated CCGA pin mapping, radiation performance metrics, ODT configuration details, and functional alternatives for high-reliability memory subsystems in aerospace avionics and satellite payload controllers.

Technical Context

This QDR II+ SRAM implements dual independent DDR interfaces-read and write-with fully pipelined 2.0-cycle latency when DOFF is high, and 1-cycle latency when DOFF is low. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent access without bus turnaround.

The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) for source-synchronous capture, and JTAG 1149.1 test access. Core VDD = 1.8 V ± 0.1 V; I/O VDDQ supports 1.4–1.8 V, compatible with both HSTL-15 and HSTL-18 signaling standards.

Key Specifications

Pinout & Package

Package: 165-ball Ceramic Column Grid Array (CCGA), 21 mm × 25 mm × 2.83 mm, RoHS-compliant, qualified per MIL-PRF-38535 Class V screening flow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed radiation-tolerant SRAM applications.

Compared with CY7C2644KV18-333BZXI, the CY7C2642KV18-333BZXI offers identical radiation performance and timing but trades 36-bit width for double depth - ideal for instruction storage - while the IS61WV102432ALL-100BLI provides lower-cost QDR-II functionality without radiation assurance, restricting use to non-space applications.

Availability

CY7C2644KV18-333BZXI is available at Aetrix Electronics and suitable for avionics data buffering, satellite payload controllers, spaceborne radar processing, and deep-space communication nodes requiring stable component supply across extended production lifecycles.

Supply support for CY7C2644KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including radiation-hardened SRAMs for aerospace and defense applications.

This device belongs to the QDR® II+ RadStop™ SRAM product line, engineered specifically for mission-critical space electronics requiring guaranteed operation under extreme radiation, temperature, and reliability constraints.

FAQ

What is the maximum operating frequency and corresponding data rate of CY7C2644KV18-333BZXI?

The device operates at a maximum clock frequency of 250 MHz. With double data rate (DDR) interfaces on both read and write ports, it achieves an effective data transfer rate of 500 MT/s per port. This yields a peak aggregate bandwidth of 3.6 Gbps (36 bits × 500 MHz), confirmed in the official Infineon datasheet (Doc # 002-18746 Rev. *C, p.2).

How does the DOFF pin affect read latency and system timing design?

When DOFF is asserted high, the device operates with 2.0-cycle read latency, providing deterministic timing for complex pipeline synchronization. When DOFF is low, latency reduces to 1 cycle, matching legacy QDR-I behavior. The selection directly impacts FPGA logic depth needed for data capture and must be fixed at power-up; it is not dynamically reconfigurable during operation.

Is external termination required given the on-die termination (ODT) feature?

No external termination resistors are required for D[35:0], BWS[3:0], or K/K signals when ODT is enabled. The ZQ pin must be connected to a 240 Ω ±1% resistor to ground for factory-calibrated ODT impedance tuning. This reduces PCB routing complexity, saves board area, and improves signal integrity in high-speed layouts per datasheet Section 10.

What radiation test standards validate the RadStop™ qualification of this part?

The device is qualified per MIL-PRF-38535 Class V screening flow and radiation-tested to 200 krad total ionizing dose (TID), latch-up immunity >120 MeV·cm²/mg at 125 °C, and heavy-ion SER ≤1×10⁻¹⁰ upsets/bit-day with external SECDED EDAC. These results are documented in the Infineon radiation report referenced in datasheet Section 24 and Appendix B.