Infineon Technologies CY7C2663KV18-550BZXC
- Part No.:
- CY7C2663KV18-550BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2663KV18-550BZXC.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,230
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Product details
Overview
CY7C2663KV18-550BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit QDR® II+ SRAM with quad data rate architecture, 8M × 18 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT). It serves as a high-bandwidth, low-latency memory buffer in network packet processors, telecom line cards, and FPGA-based acceleration systems requiring concurrent read/write access.
For engineers reviewing the CY7C2663KV18-550BZXC datasheet, CY7C2663KV18-550BZXC pinout, CY7C2663KV18-550BZXC application, or CY7C2663KV18-550BZXC equivalent, this page delivers verified specifications, FBGA-165 pin mapping, QDR II+ timing behavior, ODT configuration logic, and real-world use context for high-speed memory subsystem design.
Technical Context
The device implements true dual-port synchronous SRAM architecture with physically separate read and write data paths-eliminating bus turnaround delays. Its four-word burst transfers occur at DDR rates on both ports, achieving 1100 MT/s effective data rate at 550 MHz K/K clocks.
Internal PLL synchronizes echo clocks (CQ/CQ) to input clocks for precise data capture; DOFF pin selects between 2.5-cycle (QDR II+) and 1-cycle (QDR I-compatible) read latency modes. ODT supports programmable termination on D[17:0], BWS[1:0], and K/K inputs via ZQ calibration and ODT pin state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (8M × 18 organization) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR throughput per port |
| Read Latency | 2.5 cycles (DOFF = high) - deterministic timing for pipeline-synchronized systems |
| VDD / VDDQ | Core: 1.8 V ± 0.1 V; I/O: 1.4–1.8 V - supports mixed-voltage board designs |
| ODT Support | Configurable termination on D[17:0], BWS[1:0], K/K - eliminates 12 external resistors |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - fine-pitch, thermally optimized for high-speed routing |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - meets JEDEC SSTL-18 timing margins |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edges of K/K; 18-bit parallel write path independent of read port |
| Q[17:0] | Synchronous read data outputs | DDR-aligned output driven on K/K rising edges; tri-stated when RPS deasserted |
| RPS / WPS | Active-low port select controls | Enables independent read/write arbitration; allows depth expansion without external logic |
| BWS[1:0] | Byte write select inputs | Controls 9-bit byte segments (BWS0 → D[8:0], BWS1 → D[17:9]) for partial writes |
| K / K | Differential clock inputs | Edge-aligned clocks drive all synchronous registers; K used for address/RPS, K for BWS/D |
| CQ / CQ | Free-running echo clocks | Phase-matched to K/K for source-synchronous data capture; eliminates setup/hold uncertainty |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ to signal valid Q[17:0] - critical for DDR latch timing |
| ODT | On-die termination control | Selects ODT range (low/high) during power-up; floating defaults to high-range (RQ/1.66) |
| ZQ | Impedance calibration reference | Connects to precision 240 Ω resistor; calibrates output driver and ODT impedance to 0.2 × RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables full-duplex memory access - no bus turnaround overhead in packet buffering |
| Four-word burst architecture | Reduces address bus toggling by 75% vs. single-word access - lowers EMI and routing complexity |
| Programmable ODT with ZQ calibration | Eliminates 12 discrete termination resistors - saves PCB area and improves signal integrity at 1100 MT/s |
| 2.5-cycle + 1-cycle latency modes | DOFF pin selects QDR II+ (2.5-cycle) or QDR I (1-cycle) mode - supports legacy and next-gen controller compatibility |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system programming - critical for high-reliability telecom assemblies |
Applications
| Network Packet Buffering | FPGA-Based Acceleration |
|---|---|
|
Use Scenario: Line-rate packet buffering in 100G Ethernet switch ASICs where ingress/egress traffic must be stored and forwarded without contention. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency FIFO between MAC and switching fabric; handles concurrent 1100 MT/s reads and writes. Use Value: Eliminates bus turnaround delay, enabling sustained 2.2 GB/s aggregate bandwidth - essential for lossless cut-through forwarding. |
Use Scenario: High-throughput data staging between FPGA fabric and external SerDes interfaces in AI inference accelerators. IC Role / Device Role / Timing Role: Memory co-processor providing synchronized burst access to weight matrices and activation buffers under AXI4-Stream control. Use Value: Four-word burst reduces address strobes by 4×, lowering FPGA logic utilization and simplifying timing closure at 550 MHz. |
| Telecom Line Card Memory | Real-Time Signal Processing |
|
Use Scenario: Frame synchronization and jitter buffering in CPRI/OBSAI baseband units handling multi-carrier LTE signals. IC Role / Device Role / Timing Role: Low-jitter, deterministic-latency memory for time-aligned sample storage; ODT ensures clean eye diagrams at 1100 MT/s. Use Value: On-die termination maintains 80%+ eye height over 20-inch FR4 traces - avoids costly backplane equalization. |
Use Scenario: Radar pulse compression and beamforming coefficient storage in phased-array radar systems with strict sub-nanosecond timing budgets. IC Role / Device Role / Timing Role: Timing-critical SRAM delivering phase-aligned samples to DSP cores via echo-clock-synchronized interfaces. Use Value: CQ/CQ echo clocks enable ±15 ps data capture window - meets <50 ps skew requirement for coherent beam synthesis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2665KV18-550BZXC | 4M × 36 organization; same 550 MHz speed, ODT, and FBGA-165 package | Higher data width per access; requires wider bus and different address decoding | Select when system needs 36-bit word granularity and can accommodate larger data bus routing |
| AS7C3256A-15JCIN | Asynchronous 256K × 16 SRAM; no DDR, no ODT, no echo clocks; 15 ns access | Lower bandwidth (≈133 MB/s), no concurrent read/write, no high-speed interface support | Use only in cost-sensitive, non-real-time control-plane buffers where QDR features are unnecessary |
Compared with CY7C2663KV18-550BZXC, CY7C2665KV18-550BZXC offers higher data width but identical timing and packaging, while AS7C3256A-15JCIN lacks QDR architecture entirely-making it unsuitable for bandwidth-constrained datapath applications.
Availability
CY7C2663KV18-550BZXC is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based acceleration, and telecom line card memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C2663KV18-550BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full QDR SRAM portfolio, including legacy Cypress designs like the CY7C2663 series.
This device belongs to Infineon's high-performance memory product line, engineered specifically for deterministic-latency, high-throughput data buffering in networking, wireless infrastructure, and real-time signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C2663KV18-550BZXC?
The DOFF (Data-Off) pin selects the read latency mode: when asserted high, it enables QDR II+ operation with 2.5-cycle read latency; when low, it reverts to QDR I-compatible 1-cycle latency. This pin is sampled at power-up and remains latched, allowing hardware-level compatibility switching without firmware intervention.
How does on-die termination (ODT) work on this SRAM?
ODT provides programmable input termination for D[17:0], BWS[1:0], and K/K pins using internal resistors calibrated via the ZQ pin. The ODT pin selects between two impedance ranges (RQ/3.33 or RQ/1.66), and calibration occurs automatically during power-up. No external resistors are needed, reducing BOM count and improving signal integrity at 1100 MT/s.
Can CY7C2663KV18-550BZXC operate with VDDQ = 1.5 V?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V operation. This allows interoperability with 1.5 V HSTL interfaces while maintaining full 550 MHz performance and 2.5-cycle latency. Core VDD must remain at 1.8 V ± 0.1 V regardless of VDDQ setting.
What is the purpose of CQ and CQ echo clocks?
CQ and CQ are free-running, source-synchronous echo clocks aligned to K and K respectively. They provide precise timing references for capturing Q[17:0] output data, eliminating setup/hold uncertainty in high-speed PCB layouts. Their phase relationship is guaranteed per datasheet AC specs, enabling reliable DDR latch timing at 1100 MT/s.
CY7C2663KV18-550BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 144Mbit
- Memory Organization:
- 8M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C2663KV18-550BZXC FAQ
1.How can I place an order for CY7C2663KV18-550BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2663KV18-550BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2663KV18-550BZXC reliable?
The price and inventory of CY7C2663KV18-550BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2663KV18-550BZXC is usually 5 days.
3.What payment methods are accepted for CY7C2663KV18-550BZXC?
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Once your CY7C2663KV18-550BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2663KV18-550BZXC?
For technical support, including CY7C2663KV18-550BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2663KV18-550BZXC requirements.
6.How does Aetrix verify that CY7C2663KV18-550BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2663KV18-550BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2663KV18-550BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2663KV18-550BZXC?
All CY7C2663KV18-550BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2663KV18-550BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2663KV18-550BZXC part is unused and in its original packaging.
Return procedure for CY7C2663KV18-550BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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