Infineon Technologies CY7C2663KV18-550BZXI
- Part No.:
- CY7C2663KV18-550BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2663KV18-550BZXI.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2663KV18 from Infineon Technologies (formerly Cypress) is a 144-Mbit QDR® II+ SRAM with quad data rate architecture, 8M × 18 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT). It serves as a high-bandwidth, low-latency memory buffer in network packet processors and telecom line cards where concurrent read/write operations and precise DDR timing are critical.
For engineers reviewing the CY7C2663KV18 datasheet, CY7C2663KV18 pinout, CY7C2663KV18 application, or CY7C2663KV18 equivalent, key selection criteria include its 1100 MT/s effective data rate, separate read/write ports, echo clock (CQ/CQ) support for timing margining, HSTL I/O compatibility, and 165-ball FBGA package with VDD = 1.8 V / VDDQ = 1.4–1.8 V operation.
Technical Context
This device implements a true dual-port synchronous SRAM architecture with independent read and write pipelines-each using DDR interfaces synchronized to complementary K/K clocks. The 2.5-cycle read latency is enabled via DOFF pin assertion, while internal PLL ensures accurate data placement relative to echo clocks CQ/CQ.
It supports four-word burst transfers per access, eliminating address bus turnover overhead. ODT is configurable per D[17:0], BWS[1:0], and K/K inputs via ZQ resistor tuning, and JTAG 1149.1 boundary scan enables system-level testability without external probes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (8M × 18 organization) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s effective throughput on both read/write ports |
| Read Latency | 2.5 cycles - reduces pipeline stalls in burst-intensive packet buffering |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V HSTL systems |
| On-Die Termination | Configurable ODT on D[17:0], BWS[1:0], K/K - eliminates 12 external 33–50 Ω resistors and saves PCB area |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint compatible with automated SMT assembly |
| Core Supply | VDD = 1.8 V ± 0.1 V - tightly regulated core voltage required for stable 550 MHz operation |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous data input | Latched on rising edges of K/K; drives 18-bit write data into memory array |
| Q[17:0] | Synchronous data output | Drives 18-bit read data on rising edges of K/K; tri-stated when RPS deasserted |
| RPS | Read port select | Active-low signal sampled on K rising edge; initiates 4-word burst read sequence |
| WPS | Write port select | Active-low signal sampled on K rising edge; enables write transaction and byte write control |
| BWS[1:0] | Byte write select | Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); preserves unselected bytes |
| K / K | Differential clock inputs | Complementary clocks driving all synchronous logic; only rising edges used for register sampling |
| CQ / CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K; simplify high-speed data capture at receiver |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ; asserts one cycle before first valid Q[17:0] word in burst |
| ODT | ODT range select | Configures termination impedance: LOW = RQ/3.33 (175–350 Ω), HIGH = RQ/1.66 (175–250 Ω) |
| ZQ | Impedance calibration reference | External resistor (typically 240 Ω) sets output driver strength for Q[17:0], CQ, CQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent transactions-no bus turnaround delay between successive reads and writes |
| Four-word burst architecture | Reduces address bus switching frequency by 4× versus single-word access, lowering EMI and routing complexity |
| Programmable ODT | Eliminates need for 12 discrete termination resistors on D/BWS/K lines, reducing BOM count and board area |
| PLL-based timing control | Ensures sub-100 ps skew between Q[17:0] and CQ/CQ outputs across temperature and voltage |
| JTAG 1149.1 compliance | Supports boundary-scan testing of interconnects without physical probe access-critical for dense BGA layouts |
Applications
| Network Packet Processors | Telecom Line Cards |
|---|---|
|
Use Scenario: High-speed packet buffering in 10G/25G Ethernet switch ASICs requiring zero-turnaround memory access. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with simultaneous read (forwarding decision) and write (packet arrival) paths. Use Value: 2.5-cycle latency and 1100 MT/s bandwidth enable full-line-rate packet processing at 25 Gbps without backpressure. |
Use Scenario: Buffering control-plane messages and payload data in carrier-grade SDH/SONET add-drop multiplexers. IC Role / Device Role / Timing Role: Shared memory resource for multiple DSP cores accessing configuration tables and real-time traffic buffers. Use Value: Separate RPS/WPS controls allow deterministic arbitration between CPU and hardware accelerators without software intervention. |
| Baseband Processing Units | High-Frequency Trading Systems |
|
Use Scenario: Storing channel estimation coefficients and FFT results in LTE/5G massive MIMO baseband units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfacing directly with FPGA-based signal processing pipelines. Use Value: Echo clocks CQ/CQ provide traceable timing references for FPGA IDELAY/ODELAY calibration-reducing setup/hold violations by >150 ps. |
Use Scenario: Order book synchronization between matching engines and market data feeds in ultra-low-latency trading platforms. IC Role / Device Role / Timing Role: Deterministic-access shared memory for atomic updates of bid/ask depth and timestamp-critical event logs. Use Value: On-die termination eliminates signal integrity uncertainty on 550 MHz address/data buses-ensuring <1 ns jitter in timestamp alignment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-15JCIN | Asynchronous 256K × 16 SRAM; no DDR, no ODT, max 66 MHz | Limited to non-real-time control storage; lacks burst capability and echo clocks | Select only for cost-sensitive, low-speed boot ROM or configuration storage-not for QDR II+ replacement |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM; single-port, 10 ns access, no burst or ODT | Cannot support concurrent read/write; requires external termination and bus turnaround logic | Only viable if system design accepts 50% bandwidth reduction and added FPGA logic for port arbitration |
Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C2663KV18 delivers 16.5× higher effective bandwidth, eliminates bus turnaround overhead, and integrates ODT-making it irreplaceable in systems demanding deterministic 550 MHz dual-port operation with sub-nanosecond timing margins.
Availability
CY7C2663KV18 is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, baseband processing units, and high-frequency trading systems requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for CY7C2663KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the QDR® II+ SRAM portfolio originally developed by Cypress.
This device belongs to Infineon's high-performance memory product line, engineered specifically for deterministic, low-latency data buffering in infrastructure-class networking and communications equipment operating at multi-gigabit speeds.
FAQ
What is the function of the DOFF pin on CY7C2663KV18?
The DOFF (Disable Off) pin selects read latency mode: when asserted high, it enables 2.5-cycle read latency for maximum bandwidth; when low, it reverts to 1-cycle latency like QDR I devices. This pin is sampled during power-up initialization and remains latched until reset. Its state directly determines burst timing alignment and must match system controller expectations.
How does on-die termination (ODT) work on CY7C2663KV18?
ODT is configured via the ODT pin and calibrated against an external ZQ resistor (typically 240 Ω). When ODT is enabled, internal termination resistors (175–350 Ω range) are activated on D[17:0], BWS[1:0], and K/K inputs. This replaces discrete parallel termination, reducing signal reflections and simplifying PCB layout-especially critical at 550 MHz clock rates.
Can CY7C2663KV18 operate with VDDQ = 1.5 V?
Yes. The device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V nominal. At 1.5 V, AC timing parameters such as tAC (address-to-data) and tHZ (output hold) remain within spec per datasheet Table 10, provided VDD remains at 1.8 V ± 0.1 V and ambient temperature stays within –40°C to +85°C industrial range.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They are driven out synchronously with Q[17:0] data and serve as timing references for the receiving device (e.g., FPGA) to sample data with minimal skew. Their edge alignment with QVLD enables robust setup/hold margining in 1100 MT/s DDR interfaces.
CY7C2663KV18-550BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 144Mbit
- Memory Organization:
- 8M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C2663KV18-550BZXI FAQ
1.How can I place an order for CY7C2663KV18-550BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2663KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2663KV18-550BZXI reliable?
The price and inventory of CY7C2663KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2663KV18-550BZXI is usually 5 days.
3.What payment methods are accepted for CY7C2663KV18-550BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2663KV18-550BZXI transactions.
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CY7C2663KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2663KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2663KV18-550BZXI?
For technical support, including CY7C2663KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2663KV18-550BZXI requirements.
6.How does Aetrix verify that CY7C2663KV18-550BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C2663KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2663KV18-550BZXI meets industry standards.
7.What is the process for return or replacement of CY7C2663KV18-550BZXI?
All CY7C2663KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2663KV18-550BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2663KV18-550BZXI part is unused and in its original packaging.
Return procedure for CY7C2663KV18-550BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C2663KV18-550BZXI Tags

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