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Infineon Technologies CY7C2665KV18-450BZI

Part No.:
CY7C2665KV18-450BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2665KV18-450BZI.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,621

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Product details

Overview

CY7C2665KV18 from Infineon Technologies (formerly Cypress) is a 4M × 36, 144-Mbit QDR® II+ SRAM with quad data rate architecture, 2.5-cycle read latency, 450 MHz clock operation, and on-die termination (ODT). It delivers 1100 MT/s effective data rate via DDR interfaces on independent read/write ports, supporting high-bandwidth packet buffering in network line cards and telecom switching fabric.

For engineers reviewing the CY7C2665KV18 datasheet, CY7C2665KV18 pinout, CY7C2665KV18 application, or CY7C2665KV18 equivalent, key selection criteria include its 450 MHz maximum frequency, 1.8 V core / 1.4–1.8 V I/O supply range, 165-ball FBGA package, ODT support for D[35:0]/BWS[3:0]/K/K inputs, and JTAG 1149.1 test access compliance.

Technical Context

This device implements a synchronous pipelined SRAM architecture with physically separate read and write data paths-eliminating bus turnaround overhead. Its four-word burst transfers per address cycle reduce address bus frequency while maintaining full coherency across concurrent transactions.

The integrated PLL synchronizes echo clocks (CQ/CQ) to input clocks (K/K), enabling precise DDR timing capture at 450 MHz. ODT is configurable via the ZQ pin and ODT pin, supporting two impedance ranges (175–350 Ω low range, 175–250 Ω high range) for D, BWS, and clock inputs.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density144 Mbit (4M × 36 organization)
Max Clock Frequency450 MHz - determines maximum sustained bandwidth of 6.48 GB/s (4 × 36-bit × 450 MHz)
Read Latency2.5 cycles - enables deterministic timing for pipeline-aligned memory access in switch ASIC interfaces
Core Supply1.8 V ± 0.1 V - requires tight regulation; decoupling critical for jitter-sensitive PLL operation
I/O Supply Range1.4 V to 1.8 V - supports both HSTL-15 and HSTL-18 signaling without level shifters
On-Die TerminationConfigurable ODT for D[35:0], BWS[3:0], K/K - eliminates 72 external 50 Ω resistors, reducing PCB area and signal integrity risk
Package165-ball FBGA (15 × 17 × 1.4 mm) - industry-standard footprint compatible with automated optical inspection and reflow profiles

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsLatched on rising edges of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0]Synchronous read data outputsDriven on rising edges of K/K; tri-stated when RPS deasserted
RPS / WPSActive-low port select controlsEnable independent read/write port activation; essential for depth expansion and interleaved access
BWS[3:0]Byte write select inputsEach controls 9-bit segment of D[35:0]; allows partial-word updates without read-modify-write
K / KDifferential clock inputsProvide timing reference for all synchronous operations; K used for address/data capture, K for complementary edge alignment
CQ / CQOutput-synchronized echo clocksFree-running copies of K/K with matched skew; simplify high-speed data capture in FPGA/ASIC receivers
QVLDData validity indicatorEdge-aligned with CQ/CQ; signals valid Q[35:0] data during burst reads-critical for FIFO handshaking
ODTODT range select inputConfigures termination resistance range (low/high) during power-up; floating defaults to high range
ZQImpedance calibration referenceConnects to external precision resistor (RQ); sets output driver strength to 0.2 × RQ for CQ/CQ/Q[35:0]

Key Features

FeatureDesign Value
Independent read/write portsEnables true concurrent access-no arbitration delay between ingress packet buffering and egress scheduling
Four-word burst architectureReduces address bus toggling by 75% vs. single-word mode-lowers EMI and simplifies routing in dense backplanes
On-die termination (ODT)Eliminates need for 80+ external termination resistors-reduces BOM cost, board area, and stub-induced reflections
JTAG 1149.1 test access portSupports boundary scan testing of interconnects in multi-SRAM systems-enables production-level fault isolation
Programmable output impedanceCalibrates Q[35:0]/CQ/CQ drive strength to match trace impedance-improves signal integrity without manual tuning

Applications

Network Packet BufferingTelecom Switch Fabric

Use Scenario: Storing incoming Ethernet frames in a 10G/25G line card before classification and forwarding.

IC Role / Device Role / Timing Role: High-throughput, low-latency buffer with deterministic 2.5-cycle read response for real-time traffic shaping.

Use Value: Concurrent read/write ports allow simultaneous frame ingestion and egress scheduling-eliminating pipeline stalls in cut-through switching.

Use Scenario: Interfacing with a multi-port switch ASIC requiring burst-aligned memory access for cell-based forwarding tables.

IC Role / Device Role / Timing Role: Synchronous SRAM providing 450 MHz clock-aligned, four-word burst reads/writes to ASIC memory-mapped registers.

Use Value: Echo clocks (CQ/CQ) align with ASIC sampling windows-reducing setup/hold margin requirements and enabling >90% timing closure at 450 MHz.

High-Speed Test Equipment MemoryIndustrial Real-Time Controller Cache

Use Scenario: Capturing high-resolution waveform samples from parallel ADCs in automated test equipment (ATE).

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer synchronized to system clock and trigger events via RPS/WPS control.

Use Value: Byte write selects (BWS[3:0]) enable selective update of sample segments-preserving unmodified data without full-word overwrite overhead.

Use Scenario: Serving as deterministic instruction/data cache for a real-time motion controller executing servo loops at 20 kHz.

IC Role / Device Role / Timing Role: Low-jitter, fixed-latency memory subsystem ensuring worst-case execution time predictability.

Use Value: PLL-stabilized clocks and QVLD-valid timing guarantee sub-nanosecond data validity window-meeting <100 ns loop timing budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C3256A-15JCINAsynchronous 32K × 8 SRAM; no DDR, no ODT, no burst, 15 ns access; 32-pin SOJLower bandwidth, no concurrent port support; suited for microcontroller peripherals, not packet buffersSelect only if system clock < 100 MHz and deterministic latency is not required
IS61WV102416BLL-10TLISynchronous 1M × 16 SRAM; single port; 10 ns cycle time; no echo clocks or ODT; 48-pin TSOPNo burst or dual-port capability; limited to simple FIFO or register file use casesChoose only for cost-sensitive, non-concurrent applications where 450 MHz timing is unnecessary

Compared with AS7C3256A-15JCIN and IS61WV102416BLL-10TLI, CY7C2665KV18 uniquely delivers concurrent 450 MHz DDR read/write throughput, on-die termination, and echo-clock–assisted timing closure-making it irreplaceable in high-speed networking and test instrumentation where bus turnaround elimination and sub-cycle latency are mandatory.

Availability

CY7C2665KV18 is available at Aetrix Electronics and suitable for network line cards, telecom switch fabric, high-speed test equipment, and industrial real-time controllers requiring stable component supply across extended product lifecycles.

Supply support for CY7C2665KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

This device belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in networking ASICs, FPGA-based accelerators, and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C2665KV18?

The DOFF (Data Output Format) pin configures read latency mode: when asserted high, it enables 2.5-cycle latency for QDR II+ operation; when low, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled at power-up and remains static during operation-no runtime switching is supported.

Can CY7C2665KV18 operate with VDDQ = 1.4 V while VDD = 1.8 V?

Yes. The datasheet explicitly states VDDQ operates from 1.4 V to VDD, and this device supports 1.4 V I/O supply with 1.8 V core. This enables direct interface to 1.5 V HSTL-15 receivers without level translation, provided board layout maintains clean separation between VDDQ and VDD return paths.

How does the ZQ pin calibrate output impedance?

ZQ connects to an external precision resistor (RQ) tied to ground. During power-up initialization, internal circuitry measures RQ and sets output driver strength so that CQ, CQ, and Q[35:0] impedances equal 0.2 × RQ. For example, a 200 Ω RQ yields ~40 Ω output impedance-matching standard 50 Ω transmission lines with controlled overshoot.

Is CY7C2665KV18 pin-compatible with CY7C2663KV18?

No. Although both use the same 165-ball FBGA package, their pinouts differ significantly: CY7C2663KV18 (8M × 18) uses BWS[1:0] and Q[17:0], while CY7C2665KV18 (4M × 36) uses BWS[3:0] and Q[35:0]. Signal assignments for D, Q, BWS, and address bits are incompatible-requiring separate PCB layouts and firmware configuration.

CY7C2665KV18-450BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
4M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C2665KV18-450BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2665KV18-450BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2665KV18-450BZI reliable?

The price and inventory of CY7C2665KV18-450BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2665KV18-450BZI is usually 5 days.

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Once your CY7C2665KV18-450BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2665KV18-450BZI?

For technical support, including CY7C2665KV18-450BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2665KV18-450BZI requirements.

6.How does Aetrix verify that CY7C2665KV18-450BZI is sourced from the original manufacturer or authorized distributors?

All CY7C2665KV18-450BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2665KV18-450BZI meets industry standards.

7.What is the process for return or replacement of CY7C2665KV18-450BZI?

All CY7C2665KV18-450BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2665KV18-450BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2665KV18-450BZI part is unused and in its original packaging.

Return procedure for CY7C2665KV18-450BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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