Infineon Technologies CY7C2665KV18-450BZXI

Overview

CY7C2665KV18-450BZXI from Infineon Technologies (formerly Cypress) is a 4M × 36, 144-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 450 MHz (1100 MT/s DDR), supports 1.8 V core and 1.4–1.8 V I/O supply, and delivers concurrent read/write throughput for high-speed packet buffering in network switches.

For engineers reviewing the CY7C2665KV18-450BZXI datasheet, CY7C2665KV18-450BZXI pinout, CY7C2665KV18-450BZXI application, or CY7C2665KV18-450BZXI equivalent, key selection criteria include its 165-ball FBGA package, HSTL I/O compatibility, echo clock (CQ/CQ) timing support, and DOFF-configurable latency mode between QDR II+ (2.5-cycle) and QDR I (1-cycle) operation.

Technical Context

This device implements true quad data rate architecture with physically separate read and write ports, enabling fully independent, concurrent transactions without bus turnaround. Its dual DDR interfaces-driven by complementary K/K clocks-achieve 1100 MT/s effective data rate while maintaining synchronous, pipelined access to a 4M × 36 memory array organized as four 1M × 36 sub-arrays.

The integrated PLL ensures precise data placement relative to echo clocks (CQ/CQ), and ODT is supported on D[35:0], BWS[3:0], and K/K inputs with programmable impedance range via the ZQ pin and ODT pin. The QVLD signal provides edge-aligned valid-data indication synchronized to CQ/CQ, critical for reliable high-speed capture in FPGA-based systems.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant Pb-free construction (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102416BLL-10TLI, CY7C2665KV18-450BZXI uniquely delivers true concurrent read/write at 1100 MT/s with built-in timing aids (CQ/QVLD) and signal integrity features (ODT, HSTL), making it irreplaceable in modern high-speed packet infrastructure.

Availability

CY7C2665KV18-450BZXI is available at Aetrix Electronics and suitable for network switching, telecom baseband processing, and high-speed test equipment requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.

Supply support for CY7C2665KV18-450BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for automotive, industrial, and communications markets.

CY7C2665KV18-450BZXI belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic, high-throughput memory access in networking and telecom infrastructure where concurrent read/write bandwidth and timing precision are mission-critical.

FAQ

What is the function of the DOFF pin on CY7C2665KV18-450BZXI?

The DOFF (Data-Off) pin configures the device's read latency mode. When asserted high, it enables QDR II+ operation with 2.5-cycle read latency and four-word burst transfers. When low, it reverts to QDR I behavior with 1-cycle latency. This pin is sampled at power-up and remains latched during operation, allowing system-level optimization between bandwidth and latency.

How does the ZQ pin interact with the ODT feature?

The ZQ pin connects to an external precision resistor (typically 240 Ω) that calibrates the device's output driver strength and on-die termination impedance. During power-up initialization, the device measures this resistor and scales internal termination values to 0.2 × RQ for Q[35:0], CQ/CQ, and selected inputs. ODT pin state then selects whether calibrated impedance is applied at RQ/3.33 (low range) or RQ/1.66 (high range).

Can CY7C2665KV18-450BZXI operate with only one clock input (K) instead of K/K differential pair?

No. The device requires both K and K inputs for proper DDR timing and internal clock domain synchronization. K drives the write port and read port address latching, while K controls write data capture and read data output timing. Using only K violates AC timing specifications and disables echo clock generation, rendering CQ/CQ and QVLD unusable for source-synchronous capture.

What is the role of the RPS and WPS pins in depth expansion configurations?

RPS (Read Port Select) and WPS (Write Port Select) are active-low signals that independently enable or disable each port. In depth expansion, multiple CY7C2665KV18-450BZXI devices share the same address and data buses; RPS/WPS are decoded externally to select which device responds to a given read or write transaction, allowing seamless memory size scaling without address demultiplexing logic.