Infineon Technologies CY7C2665KV18-550BZI

Overview

CY7C2665KV18 from Infineon Technologies (formerly Cypress) is a 4M × 36, 144-Mbit QDR® II+ SRAM with quad data rate architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 550 MHz with DDR interfaces on both read and write ports (1100 MT/s), supports separate read/write ports for concurrent transactions, and uses 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth networking line cards and packet buffer subsystems.

For engineers reviewing the CY7C2665KV18 datasheet, CY7C2665KV18 pinout, CY7C2665KV18 application, or CY7C2665KV18 equivalent, key selection criteria include its 2.5-cycle latency mode, ODT support for D[35:0]/BWS[3:0]/K/K inputs, echo clock (CQ/CQ) timing alignment, and FBGA-165 package compatibility with high-speed PCB routing constraints.

Technical Context

The CY7C2665KV18 implements a synchronous pipelined SRAM architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Read and write operations are latched on alternating rising edges of complementary K/K clocks, enabling true concurrency without bus turnaround.

It integrates a PLL for precise data placement, echo clocks (CQ/CQ) synchronized to K/K for simplified high-speed capture, and programmable ODT with two impedance ranges selected via the ODT pin. The device delivers full data coherency and supports depth expansion using RPS/WPS controls.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and AS7C33256PFS-15BIN, CY7C2665KV18 uniquely delivers 550 MHz DDR performance with ODT and echo clocks - making it irreplaceable in new 100 GbE and 5G infrastructure designs requiring deterministic sub-2-cycle latency and signal integrity at scale.

Availability

CY7C2665KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and real-time video frame buffering requiring stable component supply across multi-year production programs.

Supply support for CY7C2665KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full QDR® II+ SRAM portfolio, including reliability validation, long-term supply commitment, and technical documentation continuity.

CY7C2665KV18 belongs to Infineon's high-performance memory product line, engineered specifically for deterministic, low-latency data-path buffering in carrier-grade networking and wireless infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C2665KV18?

The DOFF (Data Output Format) pin selects the read latency mode: when asserted high, the device operates in QDR II+ mode with 2.5-cycle read latency; when low, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and determines internal pipeline configuration - no runtime switching is supported.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to an external precision resistor (RQ) tied to ground. During power-up initialization, the device measures RQ and scales internal driver and ODT impedances to 0.2 × RQ. Supported RQ range is 175–350 Ω for low-range ODT or 175–250 Ω for high-range ODT, depending on the ODT pin state.

Can CY7C2665KV18 operate with only one clock (K) instead of K/K differential pair?

No. The device requires both K and K clocks for proper DDR operation: K captures write data and addresses, while K captures read data and controls. Both clocks must be present and properly phased - single-ended clocking violates AC timing specifications and causes functional failure per datasheet Section 7.1.

Is JTAG boundary scan supported during normal memory operation?

Yes. The IEEE 1149.1 TAP controller operates independently of memory functions. Boundary scan tests can be executed while the SRAM performs active read/write operations, provided TMS/TCK/TDI/TDO pins are not otherwise driven by system logic - verified in Cypress Application Note AN91174.