Infineon Technologies CY7C2670KV18-550BZI

Overview

CY7C2670KV18-550BZI from Cypress Semiconductor is a 144-Mbit (4 M × 36) DDR II+ synchronous pipelined SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, on-die termination (ODT), and echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is packaged in a 165-ball FBGA (15 × 17 × 1.4 mm).

For engineers reviewing the CY7C2670KV18-550BZI datasheet, CY7C2670KV18-550BZI pinout, CY7C2670KV18-550BZI application, or CY7C2670KV18-550BZI equivalent, key selection considerations include DDR II+ timing compliance, ODT configuration for D/BWS/K inputs, QVLD-synchronized output validity, PLL-enabled 2.5-cycle latency mode, and FBGA thermal/mechanical constraints for high-density routing.

Technical Context

The device implements a dual-clock DDR interface using K and K inputs-both rising edges latch address/control and drive data-enabling 1100 MT/s effective bandwidth. Its internal architecture splits the 4 M × 36 array into two 2 M × 36 banks, supporting burst-2 reads/writes initiated per K edge with pipelined address registration and self-timed write execution.

Timing is governed by a phase-locked loop (PLL) that aligns CQ/CQ echo clocks to K/K for deterministic data capture; QVLD provides edge-aligned validity indication. The DOFF pin selects between DDR II+ mode (2.5-cycle latency, up to 550 MHz) and DDR I mode (1-cycle latency, ≤167 MHz), while ZQ calibration sets output impedance to 0.2 × RQ for signal integrity.

Key Specifications

Pinout & Package

165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, non-Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102432BLL-10BLI, CY7C2670KV18-550BZI uniquely delivers 1100 MT/s DDR bandwidth, integrated ODT, and echo-clock–synchronized QVLD-making it the only viable option for deterministic, high-density memory subsystems operating above 200 MHz.

Availability

CY7C2670KV18-550BZI is available at Aetrix Electronics and suitable for telecom line cards, network packet processors, baseband modems, and radar signal processors requiring stable component supply, long-lifecycle support, and guaranteed FBGA package availability.

Supply support for CY7C2670KV18-550BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C2670KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth memory buffering in networking infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-low PLL disable input. When asserted low, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When high, the PLL enables DDR II+ mode with 2.5-cycle latency and 550 MHz capability. This pin must be pulled up via ≤10 kΩ resistor for normal operation; floating defaults to high-range ODT selection but not PLL enable.

How does on-die termination (ODT) work on CY7C2670KV18-550BZI?

ODT applies configurable termination to D[35:0], BWS[3:0], and K/K inputs using the ODT pin and external ZQ resistor. A low ODT selects RQ/3.33 (175–350 Ω range); high selects RQ/1.66 (175–250 Ω). ZQ connects to ground via RQ, setting output impedance to 0.2 × RQ. ODT eliminates external resistors and improves signal integrity without requiring register programming.

What is the role of CQ and CQ echo clocks, and why are they critical?

CQ and CQ are free-running, K-synchronized output clocks that mirror the input clock timing and align precisely with Q[35:0] data validity. They are edge-aligned with QVLD and allow system receivers to capture burst data without per-device delay tuning. This eliminates inter-SRAM skew in multi-chip memory banks and ensures deterministic timing in high-speed FPGA/ASIC interfaces.

Can CY7C2670KV18-550BZI operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. At 1.5 V, HSTL I/O remains compliant, and ODT ranges adjust accordingly. Electrical characteristics such as setup/hold times and output drive strength are validated across this full range per the datasheet's DC/AC specifications, making it compatible with mixed-voltage 1.5 V/1.8 V memory subsystems.