Infineon Technologies CY7C2670KV18-550BZXI

Overview

CY7C2670KV18-550BZXI from Cypress Semiconductor is a 144-Mbit (4 M × 36) DDR II+ synchronous pipelined SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, on-die termination (ODT), and echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, supporting both DDR I (1-cycle latency, DOFF low) and DDR II+ (2.5-cycle latency, DOFF high) modes.

For engineers reviewing the CY7C2670KV18-550BZXI datasheet, CY7C2670KV18-550BZXI pinout, CY7C2670KV18-550BZXI application, or CY7C2670KV18-550BZXI equivalent, key selection criteria include verified 550-MHz clock operation, HSTL-compatible I/O with variable drive strength, ODT support for D[35:0], BWS[3:0], and K/K inputs, and QVLD-synchronized valid-data indication in depth-expanded memory systems.

Technical Context

The device implements a dual-clock DDR interface using independent K (positive) and K̄ (negative) inputs-both rising edges register address, control, and write data, while read data is driven on both edges. Its internal architecture splits the 4 M × 36 array into two 2 M × 36 banks, enabling two sequential 36-bit words per access with pipelined addressing.

A PLL synchronizes echo clocks CQ/CQ to K/K for deterministic data capture; QVLD aligns with CQ/CQ edges to signal valid output timing. ODT is programmable via ODT pin and ZQ calibration resistor, supporting 175–350 Ω impedance ranges for D, BWS, and clock inputs-eliminating external termination resistors without compromising signal integrity at 1100 MT/s.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant non-Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C362000B-15PCN and IS61WV102432ALL-15BLI, CY7C2670KV18-550BZXI uniquely delivers 1100 MT/s throughput with integrated ODT, echo clocks, and configurable latency-making it the sole option for new designs targeting ≥500 MHz DDR memory interfaces with minimal PCB routing overhead.

Availability

CY7C2670KV18-550BZXI is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor cache, and depth-expanded memory subsystems requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C2670KV18-550BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2670KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking equipment, FPGA accelerators, and telecom infrastructure where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-low PLL disable control. When asserted low, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When high (or pulled up), the PLL enables DDR II+ mode with 2.5-cycle latency at up to 550 MHz. This pin must be set before power-up initialization completes to configure the correct timing mode.

How does on-die termination (ODT) work on CY7C2670KV18-550BZXI?

ODT is enabled via the ODT pin and calibrated using the ZQ pin connected to a precision resistor to ground. It provides programmable termination for D[35:0], BWS[3:0], K, and K̄ inputs-supporting 175–350 Ω ranges. This eliminates external 50 Ω resistors, reduces stub length sensitivity, and improves signal integrity at 550 MHz without requiring board-level impedance matching.

Can CY7C2670KV18-550BZXI operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. All HSTL I/O specifications-including input thresholds, output drive strength, and ODT behavior-are guaranteed across this full range, enabling interoperability with 1.5 V FPGA I/O banks and ASIC memory controllers without level shifters.

What is the purpose of the QVLD signal, and how is it timed?

QVLD is a synchronous, edge-aligned valid-data indicator that pulses high exactly when DQ[35:0] contains stable, correctly latched read data. It is timed to align with the rising edges of CQ and CQ̄, allowing the memory controller to sample DQ[35:0] without additional setup/hold margin calculations. Its timing is guaranteed across temperature and voltage per AC switching characteristics in the datasheet.