Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C4022KV13-106FCXC

Part No.:
CY7C4022KV13-106FCXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
361-BBGA, FCBGA
Datasheet:
AetrixCY7C4022KV13-106FCXC.pdf
Description:
IC SRAM 72MBIT PAR 361FCBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,711

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C4022KV13-106FCXC from Cypress Semiconductor is a 72-Mbit QDR™-IV XP SRAM configured as 4M × 18, operating at 1066 MHz with 8.0-cycle read latency and 5.0-cycle write latency. It features dual independent DDR data ports (A/B), 8-bank architecture enabling one access per bank per cycle, and on-chip ECC for soft error correction in high-reliability networking and packet buffering applications.

For engineers reviewing the CY7C4022KV13-106FCXC datasheet, CY7C4022KV13-106FCXC pinout, CY7C4022KV13-106FCXC application, or CY7C4022KV13-106FCXC equivalent, key selection criteria include concurrent read/write throughput (2132 MT/s), HSTL/SSTL/POD I/O compatibility, JTAG 1149.1 test access, and 361-ball FCBGA package integration with per-bit deskew training and address parity protection.

Technical Context

This QDR-IV XP SRAM uses differential clocking (CK/CK#) to latch port A addresses on the rising edge and port B addresses on the falling edge, enabling time-multiplexed dual-port control via a single address bus. Its 8-bank architecture supports full concurrency-each bank can be accessed once per clock cycle-maximizing random transaction rate under burst-heavy workloads.

The device implements three independent differential clock domains: CK/CK# for address/command, DKA/DKB pairs for data input timing, and QKA/QKB pairs for data output timing. It supports programmable on-die termination (ODT) on clock, address/command, and data lines, and includes ZQ-based impedance calibration for signal integrity across HSTL (1.2 V/1.25 V), SSTL (1.2 V/1.25 V), and POD (1.1 V/1.2 V) signaling standards.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Max Operating Frequency 1066 MHz - defines maximum clock rate for sustained 2132 MT/s random transaction throughput
Read/Write Latency 8.0 / 5.0 clock cycles - determines minimum delay between command issuance and valid data availability or write completion
Random Transaction Rate 2132 MT/s - measured fully random read/write accesses per second, enabled by dual DDR ports and 8-bank interleaving
I/O Voltage Options VDDQ = 1.1 V ±50 mV (POD), 1.2 V ±50 mV (HSTL/SSTL), or 1.25 V ±50 mV (HSTL/SSTL) - selects compatible logic family and termination scheme
ECC Capability On-chip single-bit error detection and correction - reduces soft error rate to <0.01 FITs/Mb, critical for telecom infrastructure uptime
Core Supply Voltage VDD = 1.3 V ±40 mV - tightly regulated core rail required for stable high-frequency operation and low SER

Pinout & Package

Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
CK, CK# Differential Address/Command Clock Input Latches port A addresses on rising edge, port B on falling edge; defines system timing reference for all control signals
DKA[1:0], DKA#[1:0], DKB[1:0], DKB#[1:0] Differential Data Input Clocks Control timing alignment of DQA/DQB inputs per 9-bit or 18-bit sub-bus segments; enables per-lane deskew
QKA[1:0], QKA#[1:0], QKB[1:0], QKB#[1:0] Differential Data Output Clocks Edge-align valid DQA/DQB output data; separate clocks per port and sub-bus ensure timing margin in high-speed routing
DQA[17:0], DQB[17:0] Bidirectional DDR Data Bus (×18 mode) Two independent 18-bit DDR interfaces supporting concurrent read/write; each transfers two words per access cycle
A[20:0] Address Input Bus 21-bit address space for 4M × 18 configuration; A[2:0] select active bank; remaining bits define row/column within bank
AP, PE# Address Parity Input / Error Flag AP provides even parity over A[21:0]; PE# asserts low on parity mismatch and remains latched until cleared via config register
ZQ/ZT Impedance Calibration Reference Connects to 240 Ω ±1% external resistor to calibrate internal ODT drive strength and match PCB trace impedance

Key Features

Feature Design Value
Dual Independent DDR Data Ports Enables simultaneous read on port A and write on port B without arbitration delay-critical for packet buffer head/tail management
Per-Bit Deskew Training Sequence Automatically adjusts input timing per DQ bit using training patterns and QVLD feedback-eliminates manual PCB trace length matching
Programmable Address/Data Bus Inversion Reduces simultaneous switching noise (SSN) and dynamic power by inverting bus values when >50% bits toggle-configurable per port
On-Die Termination (ODT) Configurable ODT on CK, address/command, and DQ lines eliminates need for external resistors and improves signal integrity at 1066 MHz
JTAG 1149.1 Boundary Scan Supports IEEE 1149.1 compliant test access for interconnect verification, configuration register readback, and production test automation

Applications

High-Speed Packet Buffering Network Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-terabit Ethernet switches with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer memory with port A handling ingress writes and port B servicing egress reads at line rate.

Use Value: 2132 MT/s RTR and 8-bank concurrency enable zero-wait-state buffering for 100G+ switch ASICs without external arbitration logic.

Use Scenario: Providing low-latency, deterministic memory for crossbar scheduler lookups and queue state tracking in modular chassis switches.

IC Role / Device Role / Timing Role: High-bandwidth memory resource synchronized to fabric clock domain; supports concurrent read-modify-write operations across ports.

Use Value: On-chip ECC ensures <0.01 FITs/Mb SER-meeting carrier-grade reliability requirements for 24/7 fabric control plane operation.

Telecom Baseband Processing Radar Signal Processing Buffer

Use Scenario: Temporary storage of OFDM symbol data between FFT processing stages in 5G massive MIMO base stations.

IC Role / Device Role / Timing Role: Burst-access memory interfacing with FPGA-based DSP engines; uses two-word burst mode to match symbol size granularity.

Use Value: Programmable bus inversion cuts dynamic power by up to 30% during high-activity FFT windowing, extending thermal margin in dense RF modules.

Use Scenario: Real-time buffering of digitized radar return samples prior to CFAR and Doppler FFT computation in airborne AESA systems.

IC Role / Device Role / Timing Role: Radiation-tolerant memory node with ZQ-calibrated POD signaling for robust operation in high-neutron environments.

Use Value: Neutron soft error immunity validated to <0.01 FITs/Mb allows deployment in avionics without external scrubbing hardware or redundant memory schemes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-performance QDR SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 4M × 18 QDR-IV, 1066 MHz, but lacks on-chip ECC and ZQ calibration; uses fixed 1.25 V VDDQ only Suitable for cost-sensitive non-critical buffers where SER mitigation is handled externally Select when ECC and impedance tuning are not required, and legacy 1.25 V system rails simplify power design
AS7C34098B-106JCIN 4M × 18 QDR-IV, 1066 MHz, supports POD/HSTL but omits JTAG boundary scan and address parity Targeted at embedded systems requiring compact debug capability and minimal test infrastructure Choose when JTAG test access and parity protection are unnecessary, and supply chain preference favors Alliance Memory sourcing

Compared with IDT72T36120L10BG and AS7C34098B-106JCIN, CY7C4022KV13-106FCXC delivers superior system-level reliability through integrated ECC, ZQ calibration, and JTAG testability-reducing board-level component count and validation effort in mission-critical infrastructure.

Availability

CY7C4022KV13-106FCXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom baseband processing requiring stable component supply and long-term lifecycle support.

Supply support for CY7C4022KV13-106FCXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding communications and industrial applications.

CY7C4022KV13 belongs to the QDR™-IV XP SRAM product line, engineered specifically for ultra-low-latency, high-throughput memory subsystems in networking ASICs, 5G infrastructure, and real-time signal processing systems.

FAQ

What is the purpose of the ZQ/ZT pin?

The ZQ/ZT pin connects to a 240 Ω ±1% external precision resistor and enables internal calibration of output driver impedance. This ensures consistent signal integrity across process, voltage, and temperature variations by dynamically adjusting ODT and output drive strength to match the system's data bus characteristic impedance.

How does address parity protection operate in CY7C4022KV13-106FCXC?

Address parity (AP) provides even parity over A[21:0]. When a parity mismatch occurs during address sampling, the PE# pin asserts low and remains latched until cleared by writing the Configuration Register's PARITY_CLEAR bit. This allows system firmware to detect and log address corruption events before memory access proceeds.

Can CY7C4022KV13-106FCXC operate with both HSTL and POD signaling simultaneously?

No. VDDQ must be set to a single voltage: 1.1 V ±50 mV for POD, or 1.2 V/1.25 V ±50 mV for HSTL/SSTL. The I/O standard is selected at power-up based on VDDQ level and corresponding ODT configuration-mixed-mode operation is not supported.

What is the function of the QVLDA[1:0] and QVLDB[1:0] pins?

QVLDA[1:0] and QVLDB[1:0] are per-sub-bus output valid indicators aligned to QKA/QKB edges. Each bit signals valid data for its associated 9-bit or 18-bit DQA/DQB segment, enabling source-synchronous capture in FPGA receivers without global strobes-critical for skew-tolerant high-speed interface design.

CY7C4022KV13-106FCXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
361-BBGA, FCBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR IV
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
1.066 GHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.26V ~ 1.34V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
361-FCBGA (21x21)

CY7C4022KV13-106FCXC FAQ

1.How can I place an order for CY7C4022KV13-106FCXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C4022KV13-106FCXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C4022KV13-106FCXC reliable?

The price and inventory of CY7C4022KV13-106FCXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4022KV13-106FCXC is usually 5 days.

3.What payment methods are accepted for CY7C4022KV13-106FCXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4022KV13-106FCXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C4022KV13-106FCXC?

CY7C4022KV13-106FCXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C4022KV13-106FCXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C4022KV13-106FCXC?

For technical support, including CY7C4022KV13-106FCXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4022KV13-106FCXC requirements.

6.How does Aetrix verify that CY7C4022KV13-106FCXC is sourced from the original manufacturer or authorized distributors?

All CY7C4022KV13-106FCXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4022KV13-106FCXC meets industry standards.

7.What is the process for return or replacement of CY7C4022KV13-106FCXC?

All CY7C4022KV13-106FCXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4022KV13-106FCXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C4022KV13-106FCXC part is unused and in its original packaging.

Return procedure for CY7C4022KV13-106FCXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C4022KV13-106FCXC Tags

  • CY7C4022KV13-106FCXC
  • CY7C4022KV13-106FCXC PDF
  • CY7C4022KV13-106FCXC Datasheet
  • CY7C4022KV13-106FCXC Specifications
  • CY7C4022KV13-106FCXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C4022KV13-106FCXC
  • Buy CY7C4022KV13-106FCXC
  • CY7C4022KV13-106FCXC Price
  • CY7C4022KV13-106FCXC Distributor
  • CY7C4022KV13-106FCXC Supplier
  • CY7C4022KV13-106FCXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER