Infineon Technologies CY7C4022KV13-933FCXI
- Part No.:
- CY7C4022KV13-933FCXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 361-BBGA, FCBGA
- Datasheet:
-
CY7C4022KV13-933FCXI.pdf
- Description:
- IC SRAM 72MBIT PAR 361FCBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C4022KV13-933FCXI from Cypress Semiconductor is a 72-Mbit QDR™-IV XP SRAM configured as 4M × 18, operating at 933 MHz with 8.0-cycle read latency and 5.0-cycle write latency. It features dual independent DDR data ports (A/B), 8-bank architecture enabling one access per bank per cycle, and on-chip ECC for soft error correction in high-reliability networking buffers.
For engineers reviewing the CY7C4022KV13-933FCXI datasheet, CY7C4022KV13-933FCXI pinout, CY7C4022KV13-933FCXI application, or CY7C4022KV13-933FCXI equivalent, key selection criteria include concurrent port timing, DDR address/command clocking with CK/CK#, HSTL/SSTL/POD I/O compatibility, and JTAG 1149.1 test access for production validation.
Technical Context
This SRAM implements QDR-IV Xtreme Performance architecture with separate differential clocks for address/command (CK/CK#), data input (DKA/DKB pairs), and data output (QKA/QKB pairs). Port A uses rising-edge sampling on CK; Port B uses falling-edge sampling - enabling true concurrent bidirectional transactions without arbitration overhead.
The device integrates programmable on-die termination (ODT) for CK, address/command, and DQ lines; per-bit deskew training via LBK pins; and bus inversion (AINV/DINVA/DINVB) to reduce simultaneous switching noise. Core voltage is fixed at 1.3 V ± 40 mV; I/O voltage supports 1.1 V (POD), 1.2 V (HSTL/SSTL), or 1.25 V (SSTL) options.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18 configuration) |
| Max Frequency | 933 MHz - determines maximum sustained transaction rate in real-time packet buffering |
| Read Latency | 8.0 clock cycles - defines minimum delay between address assertion and valid DQA/DQB output |
| Write Latency | 5.0 clock cycles - sets minimum setup time for data before write command sampling |
| Banks | 8 independent banks - enables interleaved access to sustain >1B transaction/s throughput |
| ECC Support | On-chip single-bit error detection/correction - reduces SER to <0.01 FITs/Mb for radiation-prone environments |
| I/O Standard | JESD8-16A-compliant HSTL/SSTL (1.2/1.25 V) and JESD8-24-compliant POD (1.1/1.2 V) |
| Core Voltage | VDD = 1.3 V ± 40 mV - requires tight-regulation power delivery for stable high-speed operation |
Pinout & Package
Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK, CK# | Differential address/command clock input | Rising edge latches Port A control/address; falling edge latches Port B - enables time-multiplexed dual-port access |
| DKA[1:0], DKA#[1:0] DKB[1:0], DKB#[1:0] | Differential data input clocks | DKA controls DQA timing; DKB controls DQB timing - isolates input skew per port and data nibble |
| QKA[1:0], QKA#[1:0] QKB[1:0], QKB#[1:0] | Differential data output clocks | QKA aligns DQA output edges; QKB aligns DQB output edges - ensures deterministic source-synchronous timing |
| DQA[17:0], DQB[17:0] | Bidirectional DDR data bus | Two independent 18-bit buses support concurrent read/write - eliminates port contention in switch fabric memory |
| LDA#, LDB# | Synchronous load enable | Active-low enables command registration per port - decouples command validity from clock phase |
| RWA#, RWB# | Read/write select | Paired with LDA#/LDB# to define transaction type - allows dynamic mode switching per access |
| ZQ/ZT | Output impedance calibration reference | Connects to 240 Ω ± 1% resistor to ground - calibrates ODT strength across process/voltage/temperature |
| AP, PE# | Address parity input / error flag | AP provides even parity over A[21:0]; PE# asserts low on mismatch - detects routing-induced address corruption |
Key Features
| Feature | Design Value |
|---|---|
| Dual DDR data ports with independent clocks | Enables full-duplex 18-bit data flow on A and B ports simultaneously - critical for non-blocking switch ASIC interfaces |
| 8-bank interleaving with per-cycle access | Allows one access per bank per 1.067 ns cycle at 933 MHz - sustains 7464 MT/s aggregate bandwidth |
| Programmable on-die termination (ODT) | Reduces external termination components and PCB area; configurable per signal group (clock, address, DQ) |
| Per-bit deskew training via LBK pins | Compensates for trace length mismatches up to ±100 ps - ensures setup/hold compliance across 361-ball FCBGA |
| Bus inversion (AINV/DINVA/DINVB) | Minimizes simultaneous switching current on address and data busses - lowers peak supply noise by up to 40% |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant structural testing of solder joints and interconnects - required for aerospace and telecom manufacturing |
Applications
| High-Speed Network Switch Buffer | Telecom Line Card Packet Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-terabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, synchronized to line-rate clocks. Use Value: Concurrent read/write on DQA/DQB eliminates arbitration stalls, enabling deterministic 100 Gbps+ forwarding latency. | Use Scenario: Buffering voice-over-IP (VoIP) payload streams in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Low-latency memory for jitter-buffer management and echo cancellation engines. Use Value: 5-cycle write latency ensures sub-50 ns response to real-time DSP interrupts, meeting ITU-T G.114 voice quality thresholds. |
| Radar Signal Processing FIFO | Avionics Data Concentrator Cache |
Use Scenario: Capturing and staging digitized RF samples in phased-array radar front ends. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfacing directly with ADC/DAC controllers and FFT accelerators. Use Value: On-chip ECC suppresses cosmic-ray-induced bit flips in airborne systems, achieving <0.01 FITs/Mb SER per MIL-STD-883 TM1019.2. | Use Scenario: Caching ARINC 429/664 (AFDX) message queues in flight control computers. IC Role / Device Role / Timing Role: Deterministic-access memory for time-triggered communication stacks requiring bounded read/write jitter. Use Value: 8-bank architecture guarantees worst-case 12.8 ns access granularity - satisfies DO-254 Level A timing certification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-Mbit QDR-II+, 550 MHz max, no on-chip ECC, SSTL-15 only | Lacks concurrent dual-port burst capability and SER hardening - unsuitable for radiation-sensitive avionics | Select when cost sensitivity outweighs SER and bandwidth requirements |
| ISSI IS61WV102418BLL-100BLI | 18-Mbit synchronous SRAM, 100 MHz SDR, single port, no DDR clocks or ODT | No dual-port concurrency, no deskew training, no JTAG - limited to legacy control-plane buffering | Choose only for low-speed, non-critical status register storage |
Compared with IDT72T36120L10BG and IS61WV102418BLL-100BLI, CY7C4022KV13-933FCXI delivers 2.9× higher random transaction rate, integrated SER mitigation, and deterministic dual-port timing - making it the sole option for next-generation packet processing where latency, reliability, and bandwidth co-constrain design.
Availability
CY7C4022KV13-933FCXI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, radar signal processing FIFOs, and avionics data concentrator caches requiring stable component supply across extended product lifecycles.
Supply support for CY7C4022KV13-933FCXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications infrastructure markets.
CY7C4022KV13 belongs to the QDR-IV XP SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory subsystems in packet-switched networks and real-time signal processing systems.
FAQ
What is the difference between CY7C4022KV13-933FCXI and CY7C4022KV13-1066FCXI?
The -933FCXI variant operates at 933 MHz maximum frequency with 8.0-cycle read latency, while the -1066FCXI runs at 1066 MHz with identical latency. The -933 version targets systems where thermal or power constraints prevent full-speed operation, offering lower IDD and relaxed cooling requirements without sacrificing QDR-IV XP architecture features like dual-port concurrency or on-chip ECC.
Does CY7C4022KV13-933FCXI support both HSTL and SSTL signaling on the same VDDQ rail?
Yes - the device supports JESD8-16A-compliant HSTL Class I (1.2 V ± 50 mV) and SSTL_12 (1.25 V ± 50 mV) on the same VDDQ supply. Selection is controlled by configuration register bits; no hardware change is needed. This allows interoperability with both FPGA families using HSTL (e.g., Xilinx Ultrascale+) and ASICs using SSTL (e.g., Broadcom StrataDNX).
How is on-die termination (ODT) configured for address versus data lines?
ODT is independently programmable per signal group via configuration registers: separate settings exist for CK/CK#, address/command inputs (A[x], AP, LDA#, RWB#), and DQ/DK/QK buses. Each group can be enabled/disabled and set to 34 Ω, 40 Ω, 48 Ω, or 60 Ω - allowing precise impedance matching to different trace topologies on the same PCB.
Can the address parity feature be disabled if not used in the system?
No - AP input and PE# output are always active; however, the parity check can be bypassed by tying AP to a fixed logic level (e.g., VDD or VSS) and ignoring PE#. The internal parity generator remains powered but produces predictable outputs, avoiding fault injection while eliminating external parity logic.
CY7C4022KV13-933FCXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 361-BBGA, FCBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR IV
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.26V ~ 1.34V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 361-FCBGA (21x21)
CY7C4022KV13-933FCXI FAQ
1.How can I place an order for CY7C4022KV13-933FCXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C4022KV13-933FCXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C4022KV13-933FCXI reliable?
The price and inventory of CY7C4022KV13-933FCXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4022KV13-933FCXI is usually 5 days.
3.What payment methods are accepted for CY7C4022KV13-933FCXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4022KV13-933FCXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C4022KV13-933FCXI?
CY7C4022KV13-933FCXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C4022KV13-933FCXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C4022KV13-933FCXI?
For technical support, including CY7C4022KV13-933FCXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4022KV13-933FCXI requirements.
6.How does Aetrix verify that CY7C4022KV13-933FCXI is sourced from the original manufacturer or authorized distributors?
All CY7C4022KV13-933FCXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4022KV13-933FCXI meets industry standards.
7.What is the process for return or replacement of CY7C4022KV13-933FCXI?
All CY7C4022KV13-933FCXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4022KV13-933FCXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C4022KV13-933FCXI part is unused and in its original packaging.
Return procedure for CY7C4022KV13-933FCXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C4022KV13-933FCXI Tags

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