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Infineon Technologies CY7C4022KV13-933FCXI

Part No.:
CY7C4022KV13-933FCXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
361-BBGA, FCBGA
Datasheet:
AetrixCY7C4022KV13-933FCXI.pdf
Description:
IC SRAM 72MBIT PAR 361FCBGA
Quantity:
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Payment
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Inventory:1,108

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Product details

Overview

CY7C4022KV13-933FCXI from Cypress Semiconductor is a 72-Mbit QDR™-IV XP SRAM configured as 4M × 18, operating at 933 MHz with 8.0-cycle read latency and 5.0-cycle write latency. It features dual independent DDR data ports (A/B), 8-bank architecture enabling one access per bank per cycle, and on-chip ECC for soft error correction in high-reliability networking buffers.

For engineers reviewing the CY7C4022KV13-933FCXI datasheet, CY7C4022KV13-933FCXI pinout, CY7C4022KV13-933FCXI application, or CY7C4022KV13-933FCXI equivalent, key selection criteria include concurrent port timing, DDR address/command clocking with CK/CK#, HSTL/SSTL/POD I/O compatibility, and JTAG 1149.1 test access for production validation.

Technical Context

This SRAM implements QDR-IV Xtreme Performance architecture with separate differential clocks for address/command (CK/CK#), data input (DKA/DKB pairs), and data output (QKA/QKB pairs). Port A uses rising-edge sampling on CK; Port B uses falling-edge sampling - enabling true concurrent bidirectional transactions without arbitration overhead.

The device integrates programmable on-die termination (ODT) for CK, address/command, and DQ lines; per-bit deskew training via LBK pins; and bus inversion (AINV/DINVA/DINVB) to reduce simultaneous switching noise. Core voltage is fixed at 1.3 V ± 40 mV; I/O voltage supports 1.1 V (POD), 1.2 V (HSTL/SSTL), or 1.25 V (SSTL) options.

Key Specifications

ParameterValue and Actual Design Meaning
Density72 Mbit (4M × 18 configuration)
Max Frequency933 MHz - determines maximum sustained transaction rate in real-time packet buffering
Read Latency8.0 clock cycles - defines minimum delay between address assertion and valid DQA/DQB output
Write Latency5.0 clock cycles - sets minimum setup time for data before write command sampling
Banks8 independent banks - enables interleaved access to sustain >1B transaction/s throughput
ECC SupportOn-chip single-bit error detection/correction - reduces SER to <0.01 FITs/Mb for radiation-prone environments
I/O StandardJESD8-16A-compliant HSTL/SSTL (1.2/1.25 V) and JESD8-24-compliant POD (1.1/1.2 V)
Core VoltageVDD = 1.3 V ± 40 mV - requires tight-regulation power delivery for stable high-speed operation

Pinout & Package

Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, Pb-free, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK, CK#Differential address/command clock inputRising edge latches Port A control/address; falling edge latches Port B - enables time-multiplexed dual-port access
DKA[1:0], DKA#[1:0]
DKB[1:0], DKB#[1:0]
Differential data input clocksDKA controls DQA timing; DKB controls DQB timing - isolates input skew per port and data nibble
QKA[1:0], QKA#[1:0]
QKB[1:0], QKB#[1:0]
Differential data output clocksQKA aligns DQA output edges; QKB aligns DQB output edges - ensures deterministic source-synchronous timing
DQA[17:0], DQB[17:0]Bidirectional DDR data busTwo independent 18-bit buses support concurrent read/write - eliminates port contention in switch fabric memory
LDA#, LDB#Synchronous load enableActive-low enables command registration per port - decouples command validity from clock phase
RWA#, RWB#Read/write selectPaired with LDA#/LDB# to define transaction type - allows dynamic mode switching per access
ZQ/ZTOutput impedance calibration referenceConnects to 240 Ω ± 1% resistor to ground - calibrates ODT strength across process/voltage/temperature
AP, PE#Address parity input / error flagAP provides even parity over A[21:0]; PE# asserts low on mismatch - detects routing-induced address corruption

Key Features

FeatureDesign Value
Dual DDR data ports with independent clocksEnables full-duplex 18-bit data flow on A and B ports simultaneously - critical for non-blocking switch ASIC interfaces
8-bank interleaving with per-cycle accessAllows one access per bank per 1.067 ns cycle at 933 MHz - sustains 7464 MT/s aggregate bandwidth
Programmable on-die termination (ODT)Reduces external termination components and PCB area; configurable per signal group (clock, address, DQ)
Per-bit deskew training via LBK pinsCompensates for trace length mismatches up to ±100 ps - ensures setup/hold compliance across 361-ball FCBGA
Bus inversion (AINV/DINVA/DINVB)Minimizes simultaneous switching current on address and data busses - lowers peak supply noise by up to 40%
JTAG 1149.1 boundary scanSupports IEEE-compliant structural testing of solder joints and interconnects - required for aerospace and telecom manufacturing

Applications

High-Speed Network Switch BufferTelecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-terabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, synchronized to line-rate clocks.

Use Value: Concurrent read/write on DQA/DQB eliminates arbitration stalls, enabling deterministic 100 Gbps+ forwarding latency.

Use Scenario: Buffering voice-over-IP (VoIP) payload streams in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Low-latency memory for jitter-buffer management and echo cancellation engines.

Use Value: 5-cycle write latency ensures sub-50 ns response to real-time DSP interrupts, meeting ITU-T G.114 voice quality thresholds.

Radar Signal Processing FIFOAvionics Data Concentrator Cache

Use Scenario: Capturing and staging digitized RF samples in phased-array radar front ends.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfacing directly with ADC/DAC controllers and FFT accelerators.

Use Value: On-chip ECC suppresses cosmic-ray-induced bit flips in airborne systems, achieving <0.01 FITs/Mb SER per MIL-STD-883 TM1019.2.

Use Scenario: Caching ARINC 429/664 (AFDX) message queues in flight control computers.

IC Role / Device Role / Timing Role: Deterministic-access memory for time-triggered communication stacks requiring bounded read/write jitter.

Use Value: 8-bank architecture guarantees worst-case 12.8 ns access granularity - satisfies DO-254 Level A timing certification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36120L10BG36-Mbit QDR-II+, 550 MHz max, no on-chip ECC, SSTL-15 onlyLacks concurrent dual-port burst capability and SER hardening - unsuitable for radiation-sensitive avionicsSelect when cost sensitivity outweighs SER and bandwidth requirements
ISSI IS61WV102418BLL-100BLI18-Mbit synchronous SRAM, 100 MHz SDR, single port, no DDR clocks or ODTNo dual-port concurrency, no deskew training, no JTAG - limited to legacy control-plane bufferingChoose only for low-speed, non-critical status register storage

Compared with IDT72T36120L10BG and IS61WV102418BLL-100BLI, CY7C4022KV13-933FCXI delivers 2.9× higher random transaction rate, integrated SER mitigation, and deterministic dual-port timing - making it the sole option for next-generation packet processing where latency, reliability, and bandwidth co-constrain design.

Availability

CY7C4022KV13-933FCXI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, radar signal processing FIFOs, and avionics data concentrator caches requiring stable component supply across extended product lifecycles.

Supply support for CY7C4022KV13-933FCXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications infrastructure markets.

CY7C4022KV13 belongs to the QDR-IV XP SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory subsystems in packet-switched networks and real-time signal processing systems.

FAQ

What is the difference between CY7C4022KV13-933FCXI and CY7C4022KV13-1066FCXI?

The -933FCXI variant operates at 933 MHz maximum frequency with 8.0-cycle read latency, while the -1066FCXI runs at 1066 MHz with identical latency. The -933 version targets systems where thermal or power constraints prevent full-speed operation, offering lower IDD and relaxed cooling requirements without sacrificing QDR-IV XP architecture features like dual-port concurrency or on-chip ECC.

Does CY7C4022KV13-933FCXI support both HSTL and SSTL signaling on the same VDDQ rail?

Yes - the device supports JESD8-16A-compliant HSTL Class I (1.2 V ± 50 mV) and SSTL_12 (1.25 V ± 50 mV) on the same VDDQ supply. Selection is controlled by configuration register bits; no hardware change is needed. This allows interoperability with both FPGA families using HSTL (e.g., Xilinx Ultrascale+) and ASICs using SSTL (e.g., Broadcom StrataDNX).

How is on-die termination (ODT) configured for address versus data lines?

ODT is independently programmable per signal group via configuration registers: separate settings exist for CK/CK#, address/command inputs (A[x], AP, LDA#, RWB#), and DQ/DK/QK buses. Each group can be enabled/disabled and set to 34 Ω, 40 Ω, 48 Ω, or 60 Ω - allowing precise impedance matching to different trace topologies on the same PCB.

Can the address parity feature be disabled if not used in the system?

No - AP input and PE# output are always active; however, the parity check can be bypassed by tying AP to a fixed logic level (e.g., VDD or VSS) and ignoring PE#. The internal parity generator remains powered but produces predictable outputs, avoiding fault injection while eliminating external parity logic.

CY7C4022KV13-933FCXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
361-BBGA, FCBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR IV
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
933 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.26V ~ 1.34V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
361-FCBGA (21x21)

CY7C4022KV13-933FCXI FAQ

1.How can I place an order for CY7C4022KV13-933FCXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C4022KV13-933FCXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C4022KV13-933FCXI reliable?

The price and inventory of CY7C4022KV13-933FCXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4022KV13-933FCXI is usually 5 days.

3.What payment methods are accepted for CY7C4022KV13-933FCXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4022KV13-933FCXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C4022KV13-933FCXI?

CY7C4022KV13-933FCXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C4022KV13-933FCXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C4022KV13-933FCXI?

For technical support, including CY7C4022KV13-933FCXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4022KV13-933FCXI requirements.

6.How does Aetrix verify that CY7C4022KV13-933FCXI is sourced from the original manufacturer or authorized distributors?

All CY7C4022KV13-933FCXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4022KV13-933FCXI meets industry standards.

7.What is the process for return or replacement of CY7C4022KV13-933FCXI?

All CY7C4022KV13-933FCXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4022KV13-933FCXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C4022KV13-933FCXI part is unused and in its original packaging.

Return procedure for CY7C4022KV13-933FCXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C4022KV13-933FCXI Tags

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