Infineon Technologies CY7C4121KV13-633FCXI

Overview

CY7C4121KV13-633FCXI from Cypress Semiconductor is a 144-Mbit QDR™-IV HP SRAM configured as 8M × 18, operating at 633 MHz with 5.0-cycle read latency and 3.0-cycle write latency, supporting concurrent dual-port DDR transactions for high-throughput packet buffering in network line cards.

For engineers reviewing the CY7C4121KV13-633FCXI datasheet, CY7C4121KV13-633FCXI pinout, CY7C4121KV13-633FCXI application, or CY7C4121KV13-633FCXI equivalent, key selection criteria include its 1334 MT/s random transaction rate, on-die termination programmability, per-bit deskew training, ECC-enabled soft error resilience (<0.01 FITs/Mb), and 361-ball FCBGA package compatibility with HSTL/SSTL-12 and POD-11 I/O standards.

Technical Context

This QDR-IV HP SRAM implements two independent bidirectional DDR data ports (A and B) sharing a single DDR address/command bus clocked by differential CK/CK#, enabling fully concurrent read/write operations without arbitration delay. Control signaling (RWA#/RWB#, LDA#/LDB#) runs at SDR while data paths use dedicated differential input/output clocks (DKA/DKB, QKA/QKB).

It integrates on-chip ECC for single-bit error correction, address parity protection, bus inversion (programmable per port), and ZQ-based output impedance calibration. The device supports JTAG 1149.1 boundary scan with 1.3-V LVCMOS signaling and operates with VDD = 1.3 V ±40 mV and configurable VDDQ (1.1 V or 1.2 V for POD; 1.2 V or 1.25 V for HSTL/SSTL).

Key Specifications

Pinout & Package

Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-performance dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C4121KV13-633FCXI delivers 2.7× higher random transaction rate, integrated ECC for <0.01 FITs/Mb reliability, and programmable ODT-making it uniquely suited for carrier-grade networking and aerospace data buffers where speed, integrity, and signal integrity are co-constrained.

Availability

CY7C4121KV13-633FCXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and radar signal processing buffer applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C4121KV13-633FCXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and reliability.

CY7C4121KV13 belongs to the QDR-IV HP SRAM product line, engineered specifically for ultra-low-latency, ECC-protected, dual-port memory subsystems in carrier-class infrastructure and defense electronics.

FAQ

What is the function of the ZQ pin on CY7C4121KV13-633FCXI?

The ZQ pin connects to an external 240 Ω ±1% precision resistor to ground and enables automatic output driver impedance calibration. This ensures consistent signal rise/fall times and minimizes reflections on high-speed DDR data buses, directly supporting reliable operation at 633 MHz with HSTL or POD I/O standards.

Does CY7C4121KV13-633FCXI support true simultaneous read and write operations?

Yes - it supports fully concurrent read and write transactions on Port A and Port B using independent DDR data paths and separate differential clock domains (QKA/QKB for output, DKA/DKB for input). No arbitration or internal contention occurs because each port has dedicated data latching and output drivers.

How does the on-chip ECC implementation differ from standard SEC-DED?

This device implements full on-die SEC-DED ECC with dedicated hardware syndrome generation and correction logic. It corrects all single-bit errors and detects all double-bit errors in real time during read operations, achieving <0.01 FITs/Mb soft error rate - four orders of magnitude better than prior-generation QDR SRAMs - verified under neutron irradiation testing.

Can CY7C4121KV13-633FCXI operate with both HSTL and POD I/O standards simultaneously?

No - VDDQ must be set to either 1.1 V ±50 mV (for POD-11 compliance) or 1.2 V ±50 mV (for HSTL/SSTL-12 compliance), not both. The selected voltage configures internal termination and drive strength; mixing standards on one device violates JEDEC specifications and risks signal integrity failure.