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Infineon Technologies CY7C4121KV13-667FCXC

Part No.:
CY7C4121KV13-667FCXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
361-BBGA, FCBGA
Datasheet:
AetrixCY7C4121KV13-667FCXC.pdf
Description:
IC SRAM 144MBIT PAR 361FCBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,272

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Product details

Overview

CY7C4121KV13-667FCXC from Cypress Semiconductor is a 144-Mbit QDR™-IV HP SRAM configured as 8M × 18, operating at 667 MHz with 5.0-cycle read latency and 3.0-cycle write latency. It features dual independent DDR data ports (A/B), on-die termination, bus inversion, and on-chip ECC for soft error correction - deployed in high-throughput packet buffering and network switch fabric memory subsystems.

For engineers reviewing the CY7C4121KV13-667FCXC datasheet, CY7C4121KV13-667FCXC pinout, CY7C4121KV13-667FCXC application, or CY7C4121KV13-667FCXC equivalent, key selection criteria include concurrent port transaction capability, 1334 MT/s random transaction rate, HSTL/SSTL/POD I/O compatibility, and JTAG 1149.1 test access support for production validation.

Technical Context

This QDR-IV HP SRAM uses differential clocking (CK/CK#) to latch port A addresses on the rising edge and port B addresses on the falling edge, enabling time-multiplexed dual-port access via a single address bus. Control signals operate at SDR while both data ports run DDR with dedicated input (DKA/DKB) and output (QKA/QKB) clocks.

The device integrates per-bit deskew training, programmable ODT for CK/ADDR/DQ, ZQ-based output impedance calibration, and IEEE 1149.1 boundary scan with 1.3-V LVCMOS signaling. Its ECC circuitry achieves <0.01 FITs/Mb SER, targeting mission-critical telecom and military computing where radiation-induced errors must be mitigated.

Key Specifications

Parameter Value and Actual Design Meaning
Density 144 Mbit (8M × 18 configuration)
Max Frequency 667 MHz - sets maximum clock period (1.5 ns) for timing closure in FPGA-attached memory interfaces
Random Transaction Rate 1334 MT/s - peak fully random read/write throughput across both ports under worst-case address distribution
Read/Write Latency 5.0 / 3.0 clock cycles - defines minimum pipeline depth required in controller logic for valid data capture
I/O Voltage Options VDDQ = 1.2 V ±50 mV (HSTL/SSTL) or 1.1 V ±50 mV (POD) - selects compatible driver/receiver standards on PCB
ECC Capability Single-bit error detection and correction - reduces uncorrectable error probability by four orders of magnitude vs prior SRAM generations
Core Voltage VDD = 1.3 V ±40 mV - constrains power delivery network design with tight regulation tolerance

Pinout & Package

Package: 361-ball Fine-Pitch Chip Array Ball Grid Array (FCBGA), 21 mm × 21 mm, Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
CK, CK# Differential address/command clock input Latches port A addresses on rising edge, port B on falling edge; defines system timing reference
DKA[1:0], DKA#[1:0] Port A data input clock pair Controls sampling of DQA[17:0] inputs; enables per-byte deskew training for signal integrity
QKA[1:0], QKA#[1:0] Port A data output clock pair Edge-aligns DQA[17:0] output data; critical for setup/hold timing at receiving FPGA or ASIC
DQA[17:0], DQB[17:0] Bidirectional DDR data buses Supports two-word burst transfers per access; 18-bit width optimized for 16-bit + parity or 16-bit + ECC overhead
LDA#, LDB# Synchronous load enable (port A/B) Qualifies command registration - LOW enables RWA#/RWB# sampling on respective CK edges
RWA#, RWB# Read/write select (port A/B) Paired with LDA#/LDB# to initiate read or write; determines direction of DQ bus transfer
ZQ Output impedance calibration reference Connects to 240 Ω ±1% resistor to ground; calibrates drive strength to match PCB trace impedance
JTAG TMS/TCK/TDI/TDO/TRST# IEEE 1149.1 test access port Enables boundary scan testing, register access, and configuration verification without functional operation

Key Features

Feature Design Value
Dual independent DDR data ports Enables simultaneous read from port A and write to port B - eliminates arbitration delay in full-duplex traffic buffers
On-chip ECC (SEC-DED) Corrects all single-bit errors and detects double-bit errors in stored data - essential for avionics and base station control memory
Programmable bus inversion Reduces switching current and EMI by inverting data words with >50% bit transitions - lowers dynamic power by up to 25%
Per-bit deskew training sequence Compensates for flight-time mismatch across DQ and clock nets - ensures reliable 667 MHz DDR operation on dense PCBs
Configurable on-die termination ODT programmable per signal group (CK, ADDR, DQ) - eliminates external resistors and saves board space in high-density designs

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between ingress parser and egress scheduler, synchronized to line-rate clocks.

Use Value: 1334 MT/s random transaction rate supports 100 Gbps+ throughput with sub-100 ns average access latency.

Use Scenario: Holding control-plane metadata and forwarding tables in carrier-grade SDN routers.

IC Role / Device Role / Timing Role: High-reliability memory for route lookup engines requiring ECC protection against cosmic ray-induced bit flips.

Use Value: On-chip SEC-DED ECC delivers <0.01 FITs/Mb SER - meets Telcordia GR-468-CORE reliability requirements.

High-Performance Test Equipment Military Radar Signal Processing

Use Scenario: Capturing real-time waveform samples in high-speed digital oscilloscopes and protocol analyzers.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory interfaced to FPGA-based trigger and analysis logic.

Use Value: Two-word burst + 5-cycle read latency enables deterministic 667 MHz streaming capture with minimal dead time.

Use Scenario: Storing pulse-Doppler radar FFT coefficients in airborne electronic warfare systems exposed to neutron flux.

IC Role / Device Role / Timing Role: Radiation-hardened-by-design memory node in real-time signal chain with JTAG-accessible diagnostics.

Use Value: Neutron soft error immunity validated to 1×10¹⁰ n/cm² fluence; JTAG boundary scan enables in-system fault isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-performance QDR SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 144-Mbit QDR-IV, 1066 MT/s max RTR, 1.25-V VDDQ only, no on-chip ECC Lacks integrated ECC; requires external error handling logic for safety-critical use Select when maximum bandwidth is prioritized over radiation tolerance and system-level error resilience
AS7C3256A-15JCIN 32-Mbit asynchronous SRAM, 15 ns access, single-port, no DDR or burst capability No concurrent port operation, no clocked interface, no ECC - suited for simple control storage only Only viable for low-speed legacy upgrades where QDR-IV features are unused and cost is primary constraint

Compared with IDT72T36120L10BG and AS7C3256A-15JCIN, CY7C4121KV13-667FCXC uniquely combines 1334 MT/s random throughput, dual-port DDR concurrency, and on-chip SEC-DED ECC - making it the sole option among the three for radiation-aware, full-duplex packet processing in 5G infrastructure.

Availability

CY7C4121KV13-667FCXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-performance test equipment, and military radar signal processing requiring stable component supply and long-term lifecycle support.

Supply support for CY7C4121KV13-667FCXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems, with headquarters in San Jose, CA.

CY7C4121KV13 belongs to the QDR-IV HP SRAM product line, engineered specifically for ultra-low-latency, high-concurrency memory subsystems in networking, test instrumentation, and defense electronics where deterministic timing and data integrity are non-negotiable.

FAQ

What is the function of the ZQ pin on CY7C4121KV13-667FCXC?

The ZQ pin connects to an external 240 Ω ±1% precision resistor to ground and enables internal calibration of output driver impedance. This process matches the SRAM's DQ, CK, and ADDR output drive strength to the PCB trace impedance, ensuring signal integrity at 667 MHz DDR rates without requiring discrete termination resistors.

Does CY7C4121KV13-667FCXC support both HSTL and SSTL I/O standards?

Yes - the device supports HSTL Class I and SSTL_12 (JESD8-16A compliant) when VDDQ = 1.2 V ±50 mV or 1.25 V ±50 mV, and POD (JESD8-24 compliant) when VDDQ = 1.1 V ±50 mV. The I/O standard is selected via configuration registers during initialization, not by hardware strapping.

How does the address parity feature work on this SRAM?

The AP input accepts even parity across active address bits (A[21:0] for ×18 mode), and the PE# output asserts low if a parity mismatch is detected during address latching. PE# remains asserted until cleared by writing to the Configuration Register - enabling system-level fault logging and safe failover in telecom control planes.

Can CY7C4121KV13-667FCXC operate with only one data port enabled?

Yes - port A and port B are independently controllable via LDA#/LDB# and RWA#/RWB#. Disabling one port (e.g., holding LDB# HIGH) halts command registration for that port while allowing full operation on the other, supporting asymmetric traffic patterns in protocol-aware buffers without reconfiguration overhead.

CY7C4121KV13-667FCXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
361-BBGA, FCBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR IV
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.26V ~ 1.34V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
361-FCBGA (21x21)

CY7C4121KV13-667FCXC FAQ

1.How can I place an order for CY7C4121KV13-667FCXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C4121KV13-667FCXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C4121KV13-667FCXC reliable?

The price and inventory of CY7C4121KV13-667FCXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4121KV13-667FCXC is usually 5 days.

3.What payment methods are accepted for CY7C4121KV13-667FCXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4121KV13-667FCXC transactions.

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4.How is shipping managed for CY7C4121KV13-667FCXC?

CY7C4121KV13-667FCXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C4121KV13-667FCXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C4121KV13-667FCXC?

For technical support, including CY7C4121KV13-667FCXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4121KV13-667FCXC requirements.

6.How does Aetrix verify that CY7C4121KV13-667FCXC is sourced from the original manufacturer or authorized distributors?

All CY7C4121KV13-667FCXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4121KV13-667FCXC meets industry standards.

7.What is the process for return or replacement of CY7C4121KV13-667FCXC?

All CY7C4121KV13-667FCXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4121KV13-667FCXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C4121KV13-667FCXC part is unused and in its original packaging.

Return procedure for CY7C4121KV13-667FCXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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