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Infineon Technologies CY7C4122KV13-106FCXC

Part No.:
CY7C4122KV13-106FCXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
361-BBGA, FCBGA
Datasheet:
AetrixCY7C4122KV13-106FCXC.pdf
Description:
IC SRAM 144MBIT PAR 361FCBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,041

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Product details

Overview

CY7C4122KV13-106FCXC from Cypress Semiconductor is a 144-Mbit QDR™-IV XP SRAM configured as 8M × 18, operating at 1066 MHz with 2132 MT/s random transaction rate, 8.0-cycle read latency, and dual DDR bidirectional data ports (Port A/Port B) for concurrent access in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C4122KV13-106FCXC datasheet, CY7C4122KV13-106FCXC pinout, CY7C4122KV13-106FCXC application, or CY7C4122KV13-106FCXC equivalent, key selection criteria include its eight-bank architecture, on-die termination (ODT), per-bit deskew training, address parity protection, and on-chip ECC supporting <0.01 FITs/Mb soft error rate.

Technical Context

This QDR-IV XP SRAM uses differential clocking (CK/CK#) to latch Port A addresses on the rising edge and Port B addresses on the falling edge, enabling time-multiplexed command arbitration over a single address bus while maintaining independent DDR data paths. It implements HSTL/SSTL-compatible I/O signaling (VDDQ = 1.2 V ± 50 mV) and POD signaling (VDDQ = 1.1 V ± 50 mV) with programmable drive strength and ZQ-based output impedance calibration.

The device integrates JTAG 1149.1 test access port (1.3-V LVCMOS), supports bus inversion on address and data lines to reduce switching noise, and performs internal self-calibration of ODT for clock, address/command, and data inputs - all coordinated through configuration registers accessible via JTAG or serial interface.

Key Specifications

ParameterValue and Actual Design Meaning
Density144 Mbit (8M × 18 configuration)
Max frequency1066 MHz - enables 2132 MT/s random transaction throughput
Read latency8.0 clock cycles - fixed timing for deterministic pipeline scheduling
Write latency5.0 clock cycles - shorter than read path for write-optimized burst sequences
BanksEight independent banks - allows one access per bank per cycle for sustained bandwidth
ECC capabilityOn-chip SEC-DED - detects and corrects all single-bit errors, reducing SER to <0.01 FITs/Mb
Signaling standardHSTL/SSTL (1.2 V ± 50 mV) and POD (1.1 V ± 50 mV) - compatible with JEDEC JESD8-16A/JESD8-24

Pinout & Package

Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, Pb-free, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK, CK#Differential address/command clock inputLatches Port A on rising edge, Port B on falling edge; defines timing reference for all SDR control and DDR address sampling
DKA[1:0], DKA#[1:0], DKB[1:0], DKB#[1:0]Differential data input clocksControl strobing of DQA/DQB inputs per 9-bit or 18-bit segment; enables precise per-lane capture alignment
QKA[1:0], QKA#[1:0], QKB[1:0], QKB#[1:0]Differential data output clocksEdge-aligned with DQA/DQB outputs; provides source-synchronous timing for receiver capture
DQA[17:0], DQB[17:0]Bidirectional DDR data portsIndependent 18-bit data paths supporting concurrent read/write; two-word burst on every access
A[21:0]Address inputs22-bit address bus; A[2:0] select one of eight banks; remaining bits define row/column within bank
APAddress parity inputEven parity over active address bits (A[21:0]); enables detection of single-bit address corruption
PE#Address parity error flagActive-low open-drain output asserted when AP mismatch occurs; cleared only by configuration register command
ZQ/ZTImpedance calibration referenceConnects to 240 Ω ± 1% external resistor to ground; calibrates output driver and ODT termination values

Key Features

FeatureDesign Value
Eight-bank architectureEnables full utilization of 1066 MHz clock - one bank accessed per cycle without conflict
Per-bit deskew trainingCompensates for inter-lane skew across DQ, DKx, and QKx groups to maintain setup/hold margins at 1066 MHz
Programmable ODTConfigurable termination on CK/CK#, A[x:0], and DQA/DQB inputs to match PCB trace impedance and suppress reflections
Bus inversion (AINV/DINVA/DINVB)Reduces simultaneous switching noise by up to 50% on address and data buses - lowers EMI and power supply ripple
JTAG 1149.1 interfaceSupports boundary scan testing, configuration register access, and debug visibility without requiring functional operation

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-terabit Ethernet switches with sub-100 ns latency requirements.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as non-blocking buffer memory - Port A accepts incoming packets while Port B forwards them to egress queues.

Use Value: 2132 MT/s RTR and 8M × 18 depth enable line-rate buffering at 400 GbE with zero packet loss under burst traffic.

Use Scenario: Implementing distributed lookup tables and context storage in modular chassis-based routers with hot-swappable line cards.

IC Role / Device Role / Timing Role: High-bandwidth shared memory resource accessed concurrently by multiple ASICs via dedicated SerDes links.

Use Value: Eight-bank interleaving and on-chip ECC ensure deterministic access latency and <0.01 FITs/Mb reliability across 10+ year deployments.

Telecom Baseband ProcessingRadar Signal Processing

Use Scenario: Supporting real-time FFT, channel estimation, and precoding in massive MIMO 5G base stations with strict timing closure.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for FPGA-based DSP engines - Port A feeds data to processing pipeline, Port B returns results.

Use Value: 5.0-cycle write latency and 8.0-cycle read latency allow tight coupling with 1066 MHz FPGA fabric clocks without pipeline stalls.

Use Scenario: Capturing and buffering high-resolution pulse-Doppler radar returns in airborne AESA systems requiring radiation-hardened memory behavior.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with on-chip ECC acting as acquisition memory for digital beamforming processors.

Use Value: Soft error rate <0.01 FITs/Mb meets DO-254 Level A avionics requirements for mission-critical signal chain integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36120L10BG144-Mbit QDR-IV, 1066 MHz, but lacks on-chip ECC and per-bit deskew trainingSuitable for cost-sensitive telecom infrastructure where SER >1 FITs/Mb is acceptableSelect when ECC and advanced signal integrity features are not required and legacy IDT footprint compatibility is needed
MT47H128M16RT-25EDDR2 SDRAM (2 Gbit), 250 MHz, single-port, no concurrent read/write, no ODT programmabilityUsed in lower-bandwidth control-plane memory where burst efficiency outweighs concurrency needsSelect only for non-real-time buffering where 2132 MT/s RTR and dual-port concurrency are unnecessary

Compared with IDT72T36120L10BG and MT47H128M16RT-25E, CY7C4122KV13-106FCXC delivers deterministic low-latency concurrency, hardware ECC, and calibrated I/O - critical for packet-forwarding ASICs and radar DSPs where timing predictability and soft-error immunity are non-negotiable.

Availability

CY7C4122KV13-106FCXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and radar signal processing requiring stable component supply and long-term lifecycle support.

Supply support for CY7C4122KV13-106FCXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with headquarters in San Jose, CA.

CY7C4122KV13 belongs to the QDR™-IV XP SRAM product line, engineered specifically for ultra-low-latency, high-throughput memory subsystems in networking ASICs, FPGA-based accelerators, and real-time signal processing platforms.

FAQ

What is the core voltage requirement for CY7C4122KV13-106FCXC?

The device requires VDD = 1.3 V ± 40 mV for core logic operation. This tightly regulated supply powers the internal banks, ECC engine, configuration registers, and clock distribution network. Deviation beyond ±40 mV risks timing violations or metastability in address latching and bank decoding circuits, and is not supported per datasheet specifications.

Does CY7C4122KV13-106FCXC support both HSTL and POD signaling simultaneously?

No - HSTL/SSTL (VDDQ = 1.2 V ± 50 mV) and POD (VDDQ = 1.1 V ± 50 mV) are mutually exclusive I/O standards selected at power-up via configuration register settings. The device cannot operate with mixed signaling on different pins; all DQ, DKx, and QKx groups must use the same VDDQ and signaling mode.

How is address parity error cleared after PE# assertion?

PE# remains asserted low until explicitly cleared by writing to the Address Parity Error Clear bit (bit 15) in Configuration Register 0 via JTAG or serial interface. A hardware reset does not clear PE#; software intervention is mandatory to restore normal address validation operation.

Can CY7C4122KV13-106FCXC be used in a ×36 data width configuration?

No - CY7C4122KV13-106FCXC is specifically the 8M × 18 configuration. The ×36 variant is the CY7C4142KV13-106FCXC. Pinout, address bit count (A[21:0] vs A[20:0]), and internal bank mapping differ; substituting one for the other will result in incorrect addressing and data corruption.

CY7C4122KV13-106FCXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
361-BBGA, FCBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR IV
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
1.066 GHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.26V ~ 1.34V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
361-FCBGA (21x21)

CY7C4122KV13-106FCXC FAQ

1.How can I place an order for CY7C4122KV13-106FCXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C4122KV13-106FCXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C4122KV13-106FCXC reliable?

The price and inventory of CY7C4122KV13-106FCXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4122KV13-106FCXC is usually 5 days.

3.What payment methods are accepted for CY7C4122KV13-106FCXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4122KV13-106FCXC transactions.

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4.How is shipping managed for CY7C4122KV13-106FCXC?

CY7C4122KV13-106FCXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C4122KV13-106FCXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C4122KV13-106FCXC?

For technical support, including CY7C4122KV13-106FCXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4122KV13-106FCXC requirements.

6.How does Aetrix verify that CY7C4122KV13-106FCXC is sourced from the original manufacturer or authorized distributors?

All CY7C4122KV13-106FCXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4122KV13-106FCXC meets industry standards.

7.What is the process for return or replacement of CY7C4122KV13-106FCXC?

All CY7C4122KV13-106FCXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4122KV13-106FCXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C4122KV13-106FCXC part is unused and in its original packaging.

Return procedure for CY7C4122KV13-106FCXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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