Infineon Technologies CY7C4122KV13-933FCXI

Overview

CY7C4122KV13-933FCXI from Cypress Semiconductor is a 144-Mbit QDR™-IV XP SRAM configured as 8M × 18, operating at 933 MHz with 2132 MT/s random transaction rate, 8-cycle read latency, and dual DDR bidirectional data ports (Port A/B) for concurrent access in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C4122KV13-933FCXI datasheet, CY7C4122KV13-933FCXI pinout, CY7C4122KV13-933FCXI application, or CY7C4122KV13-933FCXI equivalent, key selection criteria include its 361-ball FCBGA package, HSTL/SSTL/POD I/O compatibility, on-die termination, per-bit deskew training, and on-chip ECC supporting <0.01 FITs/Mb soft error rate.

Technical Context

This QDR-IV XP SRAM uses an eight-bank architecture enabling one access per bank per clock cycle, with address latching on rising/falling edges of differential CK/CK# to separate Port A and Port B command timing. Dual independent DDR data ports (DQA/DQB) support simultaneous read/write transactions using dedicated differential data clocks (DKA/DKB, QKA/QKB).

It implements SDR control signaling with DDR address/command bus, programmable bus inversion (AINV/DINVA/DINVB), address parity protection (AP/PE#), and JTAG 1149.1 boundary scan (TMS/TDI/TCK/TDO/TRST#) for testability - all powered by VDD = 1.3 V ± 40 mV and VDDQ = 1.2 V ± 50 mV or 1.1 V ± 50 mV depending on I/O standard.

Key Specifications

Pinout & Package

Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-performance QDR SRAM applications.

Compared with IDT72T3615L10BG and AS7C3256A-10JIN, CY7C4122KV13-933FCXI delivers 2× higher transaction rate, integrated ECC for radiation-hardened operation, and automated deskew - making it the sole viable choice for 100G+ packet memory requiring sub-10 ns deterministic latency and FIT-level reliability.

Availability

CY7C4122KV13-933FCXI is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor memory, telecom switch fabric interface, and radar signal processing applications requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C4122KV13-933FCXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with global R&D and manufacturing infrastructure.

CY7C4122KV13 belongs to the QDR™-IV XP SRAM product line, engineered specifically for deterministic, ultra-low-latency, concurrent-access memory subsystems in carrier-grade networking and defense electronics.

FAQ

What is the core voltage requirement for CY7C4122KV13-933FCXI?

The device requires VDD = 1.3 V ± 40 mV for core logic operation. This tight tolerance ensures stable internal timing and reliable ECC computation across temperature and process variation. Deviation beyond ±40 mV risks metastability in address latching and uncorrectable memory errors.

Does CY7C4122KV13-933FCXI support both HSTL and POD I/O standards simultaneously?

No - I/O standard selection is fixed per power domain: VDDQ = 1.2 V ± 50 mV configures HSTL/SSTL mode; VDDQ = 1.1 V ± 50 mV configures POD mode. Both cannot operate concurrently, and the selected standard applies to all DQ, DK, and QK pins.

How does the address parity feature function in CY7C4122KV13-933FCXI?

AP input provides even parity over A[21:0] (for ×18 config); PE# asserts low when parity mismatch occurs. The error flag remains latched until cleared via Configuration Register write - enabling host firmware to log and recover from address corruption events before memory access proceeds.

Can CY7C4122KV13-933FCXI be used without JTAG functionality?

Yes - JTAG pins (TMS, TDI, TDO, TRST#) may be left unconnected except TCK, which must be tied to VSS if unused. All core memory functions operate independently of JTAG; boundary scan is optional for test and debug only.