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Infineon Technologies CY7C4141KV13-633FCXI

Part No.:
CY7C4141KV13-633FCXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
361-BBGA, FCBGA
Datasheet:
AetrixCY7C4141KV13-633FCXI.pdf
Description:
IC SRAM 144MBIT PAR 361FCBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,300

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Product details

Overview

CY7C4141KV13-633FCXI from Cypress Semiconductor is a 144-Mbit QDR™-IV HP SRAM with 4M × 36 organization, 633 MHz maximum operating frequency, 5.0-cycle read latency, and dual independent DDR data ports supporting concurrent read/write operations. It delivers 1266 MT/s total random transaction rate and integrates on-chip ECC, bus inversion, and JTAG 1149.1 test access for high-reliability networking and packet buffering applications.

For engineers reviewing the CY7C4141KV13-633FCXI datasheet, CY7C4141KV13-633FCXI pinout, CY7C4141KV13-633FCXI application, or CY7C4141KV13-633FCXI equivalent, key selection criteria include its 4M × 36 configuration, 633 MHz clock support, HSTL/SSTL/POD I/O compatibility, on-die termination programmability, and per-bit deskew training capability.

Technical Context

The device implements a true dual-port architecture with physically separate bidirectional data buses (Port A and Port B), each controlled by a shared DDR address/command bus clocked by CK/CK#. Address sampling alternates between rising (Port A) and falling (Port B) edges of CK, enabling time-multiplexed command arbitration without internal contention.

It supports three I/O signaling standards-HSTL/SSTL at 1.2 V/1.25 V and POD at 1.1 V/1.2 V-with programmable ODT for clock, address/command, and data inputs, and uses ZQ-based internal output impedance calibration to maintain signal integrity across process, voltage, and temperature variations.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization144 Mbit, configured as 4M × 36 (21 address bits)
Max Operating Frequency633 MHz - sets maximum sustained clock rate for address/command and data I/O timing
Random Transaction Rate1266 MT/s - measured fully random read/write throughput under worst-case access patterns
Read/Write Latency5.0 / 3.0 clock cycles - defines minimum clock delay from address latch to valid output / data acceptance
I/O Voltage OptionsVDDQ = 1.1 V ±50 mV (POD), 1.2 V ±50 mV (HSTL/SSTL), or 1.25 V ±50 mV (SSTL)
Core SupplyVDD = 1.3 V ±40 mV - powers internal logic, memory array, and ECC circuitry
Soft Error Rate<0.01 FITs/Mb - achieved via on-chip ECC correcting all single-bit errors including cosmic-ray-induced events

Pinout & Package

Package: 361-ball Fine-Pitch Chip Array Ball Grid Array (FCBGA), 21 mm × 21 mm, Pb-free, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK, CK#Differential address/command clock inputSamples Port A addresses on rising edge, Port B on falling edge; defines system timing reference
DKA[1:0], DKA#[1:0], DKB[1:0], DKB#[1:0]Differential data input clocksControl strobing of DQA/DQB inputs per 18-bit sub-bus segment; enables precise capture alignment
QKA[1:0], QKA#[1:0], QKB[1:0], QKB#[1:0]Differential data output clocksEdge-align output data valid windows for DQA/DQB; supports source-synchronous DDR reads
DQA[35:0], DQB[35:0]Bidirectional DDR data portsIndependent 36-bit interfaces for concurrent read/write; no internal arbitration required
A[20:0], AP, AINVAddress, parity, and inversion control21-bit address bus with even parity protection and optional bus inversion to reduce dynamic power and noise
LDA#, LDB#, RWA#, RWB#Synchronous port enable and R/W controlPer-port command gating: LDA#/RWA# for Port A, LDB#/RWB# for Port B
ZQ/ZTOutput impedance calibration referenceConnects to 240 Ω ±1% external resistor to calibrate driver strength and ODT values
JTAG TMS/TDI/TCK/TDO/TRST#IEEE 1149.1 boundary scan interfaceEnables production testing, configuration register access, and debug visibility without intrusive probing

Key Features

FeatureDesign Value
Dual independent DDR data portsEnables simultaneous read from Port A and write to Port B without arbitration delay or bandwidth sharing
On-chip ECC with SER <0.01 FITs/MbCorrects all single-bit memory errors in real time, eliminating need for external error-handling logic in mission-critical systems
Programmable on-die termination (ODT)Reduces stub reflections and improves signal integrity on high-speed parallel buses without external resistors
Per-bit deskew training sequenceAutomatically compensates for trace length mismatches across DQ and clock nets during initialization
Bus inversion for address and dataMinimizes switching activity and dynamic power by inverting bus values when >50% bits change state

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-terabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between line cards and switch fabric ASICs.

Use Value: Concurrent 36-bit reads and writes at 633 MHz sustain full line-rate forwarding without head-of-line blocking.

Use Scenario: Providing low-latency, deterministic memory access for crossbar scheduler lookups in modular chassis switches.

IC Role / Device Role / Timing Role: High-bandwidth memory resource for priority queue management and credit-based flow control tables.

Use Value: 5-cycle read latency and 3-cycle write latency ensure sub-10 ns round-trip access for real-time scheduling decisions.

Telecom Baseband ProcessingRadar Signal Processing Buffer

Use Scenario: Holding intermediate FFT and channel estimation results in 5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Shared memory between multiple DSP cores performing parallel signal processing pipelines.

Use Value: Dual-port architecture eliminates inter-core memory contention, improving compute utilization by ≥35% over single-port alternatives.

Use Scenario: Capturing and staging high-resolution pulse-Doppler radar returns before FFT processing.

IC Role / Device Role / Timing Role: Real-time acquisition buffer synchronized to ADC sampling clocks via QKA/QKB outputs.

Use Value: On-chip ECC ensures data integrity over extended airborne operation where soft errors from cosmic radiation are elevated.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-performance QDR SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C4141KV13-667FCXIHigher max frequency (667 MHz), 1334 MT/s RTR, identical pinout and feature setRequires tighter PCB layout and stricter power delivery due to higher current draw (3200 mA vs. 2950 mA @ ×36)Select when system clock budget allows 667 MHz operation and additional 68 MT/s throughput is needed
AS7C3256A-15JCINSingle-port, 32 Mbit, 15 ns async access, 3.3 V CMOS interface, no ECC or DDRUsed in legacy control-plane buffers where concurrency and speed are not requiredOnly suitable for cost-sensitive, low-bandwidth applications lacking QDR timing or reliability requirements

Compared with CY7C4141KV13-633FCXI, the -667FCXI variant offers higher throughput at increased power and layout complexity, while the AS7C3256A-15JCIN provides basic storage at lower cost but lacks dual-port concurrency, ECC, and high-speed DDR signaling essential for modern packet processing.

Availability

CY7C4141KV13-633FCXI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and radar signal processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C4141KV13-633FCXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR-IV HP SRAM product line targets ultra-low-latency, high-throughput memory subsystems in packet-switched infrastructure where deterministic timing and soft-error resilience are mandatory.

FAQ

What is the difference between CY7C4141KV13-633FCXI and CY7C4121KV13-633FCXI?

CY7C4141KV13-633FCXI is organized as 4M × 36 (144 Mbit), using 21 address bits and supporting 36-bit data paths per port. CY7C4121KV13-633FCXI is 8M × 18 (also 144 Mbit) with 22 address bits and 18-bit data paths. Both share identical timing, signaling, and feature sets but differ in bus width and pin mapping for DQA/DQB and associated clocks.

Does CY7C4141KV13-633FCXI require external termination resistors?

No. The device includes programmable on-die termination (ODT) for clock, address/command, and data inputs, calibrated via the ZQ pin against an external 240 Ω reference resistor. External termination is optional and only used if system-level signal integrity analysis indicates additional tuning is needed.

How does the bus inversion feature reduce power consumption?

Bus inversion compares the number of logic-1 bits on the address or data bus to a threshold (typically half the bus width). When more than half the bits would toggle, the bus value is inverted and the DINVA/DINVB or AINV flag is asserted. This cuts switching activity-and thus dynamic power-by up to 50% on highly active buses.

Can CY7C4141KV13-633FCXI operate with only one data port enabled?

Yes. Port A and Port B are fully independent. Either port can be disabled using LDA#/LDB# control signals while the other remains active. Internal operations continue uninterrupted, and unused port pins may be left unconnected or terminated per board-level signal integrity requirements.

CY7C4141KV13-633FCXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
361-BBGA, FCBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR IV
Memory Size:
144Mbit
Memory Organization:
4M x 36
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.26V ~ 1.34V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
361-FCBGA (21x21)

CY7C4141KV13-633FCXI FAQ

1.How can I place an order for CY7C4141KV13-633FCXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C4141KV13-633FCXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C4141KV13-633FCXI reliable?

The price and inventory of CY7C4141KV13-633FCXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4141KV13-633FCXI is usually 5 days.

3.What payment methods are accepted for CY7C4141KV13-633FCXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4141KV13-633FCXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C4141KV13-633FCXI?

CY7C4141KV13-633FCXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C4141KV13-633FCXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C4141KV13-633FCXI?

For technical support, including CY7C4141KV13-633FCXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4141KV13-633FCXI requirements.

6.How does Aetrix verify that CY7C4141KV13-633FCXI is sourced from the original manufacturer or authorized distributors?

All CY7C4141KV13-633FCXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4141KV13-633FCXI meets industry standards.

7.What is the process for return or replacement of CY7C4141KV13-633FCXI?

All CY7C4141KV13-633FCXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4141KV13-633FCXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C4141KV13-633FCXI part is unused and in its original packaging.

Return procedure for CY7C4141KV13-633FCXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C4141KV13-633FCXI Tags

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