Infineon Technologies CY7C4141KV13-633FCXI
- Part No.:
- CY7C4141KV13-633FCXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 361-BBGA, FCBGA
- Datasheet:
-
CY7C4141KV13-633FCXI.pdf
- Description:
- IC SRAM 144MBIT PAR 361FCBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,300
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Product details
Overview
CY7C4141KV13-633FCXI from Cypress Semiconductor is a 144-Mbit QDR™-IV HP SRAM with 4M × 36 organization, 633 MHz maximum operating frequency, 5.0-cycle read latency, and dual independent DDR data ports supporting concurrent read/write operations. It delivers 1266 MT/s total random transaction rate and integrates on-chip ECC, bus inversion, and JTAG 1149.1 test access for high-reliability networking and packet buffering applications.
For engineers reviewing the CY7C4141KV13-633FCXI datasheet, CY7C4141KV13-633FCXI pinout, CY7C4141KV13-633FCXI application, or CY7C4141KV13-633FCXI equivalent, key selection criteria include its 4M × 36 configuration, 633 MHz clock support, HSTL/SSTL/POD I/O compatibility, on-die termination programmability, and per-bit deskew training capability.
Technical Context
The device implements a true dual-port architecture with physically separate bidirectional data buses (Port A and Port B), each controlled by a shared DDR address/command bus clocked by CK/CK#. Address sampling alternates between rising (Port A) and falling (Port B) edges of CK, enabling time-multiplexed command arbitration without internal contention.
It supports three I/O signaling standards-HSTL/SSTL at 1.2 V/1.25 V and POD at 1.1 V/1.2 V-with programmable ODT for clock, address/command, and data inputs, and uses ZQ-based internal output impedance calibration to maintain signal integrity across process, voltage, and temperature variations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 144 Mbit, configured as 4M × 36 (21 address bits) |
| Max Operating Frequency | 633 MHz - sets maximum sustained clock rate for address/command and data I/O timing |
| Random Transaction Rate | 1266 MT/s - measured fully random read/write throughput under worst-case access patterns |
| Read/Write Latency | 5.0 / 3.0 clock cycles - defines minimum clock delay from address latch to valid output / data acceptance |
| I/O Voltage Options | VDDQ = 1.1 V ±50 mV (POD), 1.2 V ±50 mV (HSTL/SSTL), or 1.25 V ±50 mV (SSTL) |
| Core Supply | VDD = 1.3 V ±40 mV - powers internal logic, memory array, and ECC circuitry |
| Soft Error Rate | <0.01 FITs/Mb - achieved via on-chip ECC correcting all single-bit errors including cosmic-ray-induced events |
Pinout & Package
Package: 361-ball Fine-Pitch Chip Array Ball Grid Array (FCBGA), 21 mm × 21 mm, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK, CK# | Differential address/command clock input | Samples Port A addresses on rising edge, Port B on falling edge; defines system timing reference |
| DKA[1:0], DKA#[1:0], DKB[1:0], DKB#[1:0] | Differential data input clocks | Control strobing of DQA/DQB inputs per 18-bit sub-bus segment; enables precise capture alignment |
| QKA[1:0], QKA#[1:0], QKB[1:0], QKB#[1:0] | Differential data output clocks | Edge-align output data valid windows for DQA/DQB; supports source-synchronous DDR reads |
| DQA[35:0], DQB[35:0] | Bidirectional DDR data ports | Independent 36-bit interfaces for concurrent read/write; no internal arbitration required |
| A[20:0], AP, AINV | Address, parity, and inversion control | 21-bit address bus with even parity protection and optional bus inversion to reduce dynamic power and noise |
| LDA#, LDB#, RWA#, RWB# | Synchronous port enable and R/W control | Per-port command gating: LDA#/RWA# for Port A, LDB#/RWB# for Port B |
| ZQ/ZT | Output impedance calibration reference | Connects to 240 Ω ±1% external resistor to calibrate driver strength and ODT values |
| JTAG TMS/TDI/TCK/TDO/TRST# | IEEE 1149.1 boundary scan interface | Enables production testing, configuration register access, and debug visibility without intrusive probing |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent DDR data ports | Enables simultaneous read from Port A and write to Port B without arbitration delay or bandwidth sharing |
| On-chip ECC with SER <0.01 FITs/Mb | Corrects all single-bit memory errors in real time, eliminating need for external error-handling logic in mission-critical systems |
| Programmable on-die termination (ODT) | Reduces stub reflections and improves signal integrity on high-speed parallel buses without external resistors |
| Per-bit deskew training sequence | Automatically compensates for trace length mismatches across DQ and clock nets during initialization |
| Bus inversion for address and data | Minimizes switching activity and dynamic power by inverting bus values when >50% bits change state |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-terabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between line cards and switch fabric ASICs. Use Value: Concurrent 36-bit reads and writes at 633 MHz sustain full line-rate forwarding without head-of-line blocking. | Use Scenario: Providing low-latency, deterministic memory access for crossbar scheduler lookups in modular chassis switches. IC Role / Device Role / Timing Role: High-bandwidth memory resource for priority queue management and credit-based flow control tables. Use Value: 5-cycle read latency and 3-cycle write latency ensure sub-10 ns round-trip access for real-time scheduling decisions. |
| Telecom Baseband Processing | Radar Signal Processing Buffer |
Use Scenario: Holding intermediate FFT and channel estimation results in 5G massive MIMO baseband units. IC Role / Device Role / Timing Role: Shared memory between multiple DSP cores performing parallel signal processing pipelines. Use Value: Dual-port architecture eliminates inter-core memory contention, improving compute utilization by ≥35% over single-port alternatives. | Use Scenario: Capturing and staging high-resolution pulse-Doppler radar returns before FFT processing. IC Role / Device Role / Timing Role: Real-time acquisition buffer synchronized to ADC sampling clocks via QKA/QKB outputs. Use Value: On-chip ECC ensures data integrity over extended airborne operation where soft errors from cosmic radiation are elevated. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-performance QDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C4141KV13-667FCXI | Higher max frequency (667 MHz), 1334 MT/s RTR, identical pinout and feature set | Requires tighter PCB layout and stricter power delivery due to higher current draw (3200 mA vs. 2950 mA @ ×36) | Select when system clock budget allows 667 MHz operation and additional 68 MT/s throughput is needed |
| AS7C3256A-15JCIN | Single-port, 32 Mbit, 15 ns async access, 3.3 V CMOS interface, no ECC or DDR | Used in legacy control-plane buffers where concurrency and speed are not required | Only suitable for cost-sensitive, low-bandwidth applications lacking QDR timing or reliability requirements |
Compared with CY7C4141KV13-633FCXI, the -667FCXI variant offers higher throughput at increased power and layout complexity, while the AS7C3256A-15JCIN provides basic storage at lower cost but lacks dual-port concurrency, ECC, and high-speed DDR signaling essential for modern packet processing.
Availability
CY7C4141KV13-633FCXI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and radar signal processing requiring stable component supply and long-term industrial availability.
Supply support for CY7C4141KV13-633FCXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
The QDR-IV HP SRAM product line targets ultra-low-latency, high-throughput memory subsystems in packet-switched infrastructure where deterministic timing and soft-error resilience are mandatory.
FAQ
What is the difference between CY7C4141KV13-633FCXI and CY7C4121KV13-633FCXI?
CY7C4141KV13-633FCXI is organized as 4M × 36 (144 Mbit), using 21 address bits and supporting 36-bit data paths per port. CY7C4121KV13-633FCXI is 8M × 18 (also 144 Mbit) with 22 address bits and 18-bit data paths. Both share identical timing, signaling, and feature sets but differ in bus width and pin mapping for DQA/DQB and associated clocks.
Does CY7C4141KV13-633FCXI require external termination resistors?
No. The device includes programmable on-die termination (ODT) for clock, address/command, and data inputs, calibrated via the ZQ pin against an external 240 Ω reference resistor. External termination is optional and only used if system-level signal integrity analysis indicates additional tuning is needed.
How does the bus inversion feature reduce power consumption?
Bus inversion compares the number of logic-1 bits on the address or data bus to a threshold (typically half the bus width). When more than half the bits would toggle, the bus value is inverted and the DINVA/DINVB or AINV flag is asserted. This cuts switching activity-and thus dynamic power-by up to 50% on highly active buses.
Can CY7C4141KV13-633FCXI operate with only one data port enabled?
Yes. Port A and Port B are fully independent. Either port can be disabled using LDA#/LDB# control signals while the other remains active. Internal operations continue uninterrupted, and unused port pins may be left unconnected or terminated per board-level signal integrity requirements.
CY7C4141KV13-633FCXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 361-BBGA, FCBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR IV
- Memory Size:
- 144Mbit
- Memory Organization:
- 4M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 633 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.26V ~ 1.34V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 361-FCBGA (21x21)
CY7C4141KV13-633FCXI FAQ
1.How can I place an order for CY7C4141KV13-633FCXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C4141KV13-633FCXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C4141KV13-633FCXI reliable?
The price and inventory of CY7C4141KV13-633FCXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4141KV13-633FCXI is usually 5 days.
3.What payment methods are accepted for CY7C4141KV13-633FCXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4141KV13-633FCXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C4141KV13-633FCXI?
CY7C4141KV13-633FCXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C4141KV13-633FCXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C4141KV13-633FCXI?
For technical support, including CY7C4141KV13-633FCXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4141KV13-633FCXI requirements.
6.How does Aetrix verify that CY7C4141KV13-633FCXI is sourced from the original manufacturer or authorized distributors?
All CY7C4141KV13-633FCXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4141KV13-633FCXI meets industry standards.
7.What is the process for return or replacement of CY7C4141KV13-633FCXI?
All CY7C4141KV13-633FCXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4141KV13-633FCXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C4141KV13-633FCXI part is unused and in its original packaging.
Return procedure for CY7C4141KV13-633FCXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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