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Infineon Technologies CY7C4141KV13-667FCXC

Part No.:
CY7C4141KV13-667FCXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
361-BBGA, FCBGA
Datasheet:
AetrixCY7C4141KV13-667FCXC.pdf
Description:
IC SRAM 144MBIT PAR 361FCBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,503

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Product details

Overview

CY7C4141KV13-667FCXC from Cypress Semiconductor is a 144-Mbit QDR™-IV HP SRAM configured as 4M × 36, operating at 667 MHz with 1334 MT/s random transaction rate, 5.0-cycle read latency, and dual DDR bidirectional data ports (Port A/B) for concurrent access in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C4141KV13-667FCXC datasheet, CY7C4141KV13-667FCXC pinout, CY7C4141KV13-667FCXC application, or CY7C4141KV13-667FCXC equivalent, key selection criteria include its 1.3-V core supply, 1.1/1.2-V POD or SSTL/HSTL I/O compatibility, on-die termination, per-bit deskew training, and on-chip ECC supporting <0.01 FITs/Mb soft error rate.

Technical Context

The device implements a dual-port architecture with one shared DDR address/command bus (CK/CK#) and two independent DDR data buses (DKA/DKB for input, QKA/QKB for output), where port A commands are sampled on CK rising edge and port B on CK falling edge. It supports two-word burst transfers on all accesses and uses SDR control signaling (RWA#, LDA#, etc.) synchronized to the same CK clock.

Internal features include programmable bus inversion (address/data), address parity protection with PE# flag, ZQ-based output impedance calibration, and IEEE 1149.1 JTAG boundary scan with 1.3-V LVCMOS signaling. The on-chip ECC detects and corrects all single-bit errors, reducing SER by four orders of magnitude versus prior SRAM generations.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization144 Mbit, 4M × 36 configuration - supports wide-data-path packet buffers requiring 36-bit aligned storage.
Max Operating Frequency667 MHz - enables 1334 million random transactions per second (MT/s) in fully random access patterns.
Read/Write Latency5.0 / 3.0 clock cycles - defines minimum delay between command assertion and valid read data or write completion.
I/O Voltage Options1.1 V ±50 mV (POD) or 1.2 V ±50 mV (SSTL/HSTL) - ensures signal integrity on high-speed parallel buses with stub-series termination.
Core SupplyVDD = 1.3 V ±40 mV - low-voltage core reduces dynamic power while maintaining timing margins at 667 MHz.
Soft Error Rate<0.01 FITs/Mb - achieved via on-chip ECC, critical for telecom infrastructure and aerospace systems exposed to cosmic radiation.
On-Die TerminationProgrammable ODT for CK, address/command, and DQ inputs - eliminates external termination resistors and improves signal fidelity.

Pinout & Package

Available in a 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA) package measuring 21 mm × 21 mm, Pb-free, with 1.0-mm ball pitch and standard thermal pad layout.

Pin/TerminalCircuit RoleDesign Meaning
CK, CK#Differential address/command clock inputSamples port A commands on rising edge, port B on falling edge; defines system timing reference for all SDR control and DDR address signals.
DKA[1:0], DKA#[1:0], DKB[1:0], DKB#[1:0]Differential data input clocksFour dedicated differential pairs - DKA0/QKA0 control lower 18 bits of DQA/DQB, DKA1/QKA1 control upper 18 bits in ×36 mode.
QKA[1:0], QKA#[1:0], QKB[1:0], QKB#[1:0]Differential data output clocksEdge-aligned with DQA/DQB output data; enables precise capture of DDR outputs at receiver using source-synchronous timing.
DQA[35:0], DQB[35:0]Bidirectional DDR data bus (Port A/B)Two independent 36-bit data paths support simultaneous read+write or read+read operations without arbitration delay.
LDA#, LDB#, RWA#, RWB#Synchronous port enable & R/W controlSDR-level command inputs - LDA#/RWA# pair controls Port A, LDB#/RWB# pair controls Port B, enabling true concurrency.
ZQOutput impedance calibration referenceConnects to 240-Ω external resistor to ground; calibrates driver strength and ODT values across voltage/temperature corners.
AP, PE#, AINVAddress parity interfaceAP provides even parity over A[20:0]; PE# asserts low on parity error; AINV enables bus inversion to minimize switching noise on address lines.

Key Features

FeatureDesign Value
Dual independent DDR data portsEnables concurrent read/write or read/read on Port A and Port B - eliminates memory arbitration bottlenecks in switch fabric controllers.
Per-bit deskew training sequenceCompensates for trace length mismatch across 36-bit DQ buses, ensuring setup/hold compliance at 1334 MT/s without manual PCB tuning.
On-chip ECC with SER <0.01 FITs/MbCorrects all single-bit upsets induced by alpha particles or cosmic rays - meets telecom NEBS Level 3 and aerospace radiation tolerance requirements.
Programmable bus inversion (AINV/DINVA/DINVB)Reduces simultaneous switching noise and dynamic power by inverting data/address words with >50% bit transitions - measurable reduction in VDDQ current ripple.
JTAG 1149.1 test access portSupports boundary scan testing, configuration register access, and debug visibility without requiring additional test pads or probe points.

Applications

High-Speed Network Switch FabricTelecom Line Card Buffering

Use Scenario: Storing and forwarding variable-length packets in multi-terabit Ethernet switches with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as ingress/egress packet buffer with zero-contention concurrent access - Port A accepts incoming frames while Port B delivers outgoing frames.

Use Value: 1334 MT/s random transaction rate sustains line-rate throughput at 400Gbps+ with sub-10ns read-to-write turnaround.

Use Scenario: Deep buffering for OC-192/STM-64 SONET/SDH framer interfaces handling jittered, bursty traffic.

IC Role / Device Role / Timing Role: High-density ×36 SRAM serves as elastic store and pointer RAM in time-division multiplexing (TDM) cross-connect ASICs.

Use Value: On-chip ECC ensures data integrity over 20+ year deployments in carrier-class central office environments.

Radar Signal Processing MemoryAI Accelerator On-Chip Cache

Use Scenario: Real-time FFT and beamforming buffers in phased-array radar systems requiring deterministic low-latency access.

IC Role / Device Role / Timing Role: Acts as ping-pong buffer between ADC/DAC interfaces and DSP cores - Port A streams digitized RF samples, Port B feeds processed beams.

Use Value: 5.0-cycle read latency and 3.0-cycle write latency guarantee bounded processing delay for pulse-Doppler algorithms.

Use Scenario: Shared scratchpad memory between multiple tensor compute units in edge AI inference accelerators.

IC Role / Device Role / Timing Role: Provides non-blocking, low-latency access to weight matrices and activation maps during convolution pipelines.

Use Value: Dual DDR ports eliminate inter-unit memory contention, increasing effective bandwidth beyond single-port GDDR6 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-performance dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36120L10BG144-Mbit QDR-IV, 667 MHz, but uses 1.5-V SSTL-15 I/O and lacks on-chip ECCNo built-in error correction - requires external ECC logic or higher system-level redundancySelect when legacy 1.5-V infrastructure exists and SER requirements are less stringent than telecom/aerospace standards
AS7C3416000B-667BIN144-Mbit QDR-IV, same 1.3-V core and 1.1-V POD I/O, but no JTAG or ZQ calibrationMissing per-bit deskew training and boundary scan - increases PCB validation effort and limits field-debug capabilityChoose for cost-sensitive industrial applications where full telecom-grade reliability and debug features are not required

Compared with IDT72T36120L10BG and AS7C3416000B-667BIN, CY7C4141KV13-667FCXC uniquely integrates ECC, ZQ calibration, and JTAG in a 1.1-V POD interface - delivering verified soft-error immunity and production-test readiness without design compromises.

Availability

CY7C4141KV13-667FCXC is available at Aetrix Electronics and suitable for high-speed network switch fabric, telecom line card buffering, radar signal processing, and AI accelerator cache applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C4141KV13-667FCXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with emphasis on reliability, integration, and signal integrity.

CY7C4141KV13 belongs to the QDR™-IV HP SRAM product line, engineered specifically for deterministic, ultra-low-latency, high-throughput memory subsystems in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the ZQ pin on CY7C4141KV13-667FCXC?

The ZQ pin connects to a 240-Ω external resistor to ground and enables automatic output driver and on-die termination (ODT) impedance calibration. This compensates for process, voltage, and temperature variations, ensuring consistent signal integrity across the 36-bit DQ buses at 1334 MT/s without manual resistor tuning.

Does CY7C4141KV13-667FCXC support both SSTL and POD I/O standards?

Yes - it supports JESD8-16A-compliant SSTL/HSTL (1.2 V ±50 mV or 1.25 V ±50 mV) and JESD8-24-compliant POD (1.1 V ±50 mV or 1.2 V ±50 mV). The selected standard is configured via mode registers; both require separate VDDQ supplies matched to the chosen voltage.

How does the address parity feature work on this SRAM?

The AP input provides even parity across A[20:0] (for ×36 mode); the PE# output asserts low when a parity mismatch is detected during address latching. PE# remains asserted until cleared by writing to the Configuration Register - enabling system-level fault logging and safe failover before corrupted addresses cause data loss.

Can CY7C4141KV13-667FCXC operate with only one data port enabled?

Yes - LDA# and LDB# are independent port enables. Driving LDB# high disables all Port B commands while allowing Port A to operate normally; similarly, LDA# high disables Port A. Internal operations continue, preserving data coherency and enabling graceful port shutdown for power management or fault isolation.

CY7C4141KV13-667FCXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
361-BBGA, FCBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR IV
Memory Size:
144Mbit
Memory Organization:
4M x 36
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.26V ~ 1.34V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
361-FCBGA (21x21)

CY7C4141KV13-667FCXC FAQ

1.How can I place an order for CY7C4141KV13-667FCXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C4141KV13-667FCXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C4141KV13-667FCXC reliable?

The price and inventory of CY7C4141KV13-667FCXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4141KV13-667FCXC is usually 5 days.

3.What payment methods are accepted for CY7C4141KV13-667FCXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4141KV13-667FCXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C4141KV13-667FCXC?

CY7C4141KV13-667FCXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C4141KV13-667FCXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C4141KV13-667FCXC?

For technical support, including CY7C4141KV13-667FCXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4141KV13-667FCXC requirements.

6.How does Aetrix verify that CY7C4141KV13-667FCXC is sourced from the original manufacturer or authorized distributors?

All CY7C4141KV13-667FCXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4141KV13-667FCXC meets industry standards.

7.What is the process for return or replacement of CY7C4141KV13-667FCXC?

All CY7C4141KV13-667FCXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4141KV13-667FCXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C4141KV13-667FCXC part is unused and in its original packaging.

Return procedure for CY7C4141KV13-667FCXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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