Infineon Technologies CY7C4141KV13-667FCXC
- Part No.:
- CY7C4141KV13-667FCXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 361-BBGA, FCBGA
- Datasheet:
-
CY7C4141KV13-667FCXC.pdf
- Description:
- IC SRAM 144MBIT PAR 361FCBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C4141KV13-667FCXC from Cypress Semiconductor is a 144-Mbit QDR™-IV HP SRAM configured as 4M × 36, operating at 667 MHz with 1334 MT/s random transaction rate, 5.0-cycle read latency, and dual DDR bidirectional data ports (Port A/B) for concurrent access in high-bandwidth networking and packet buffering applications.
For engineers reviewing the CY7C4141KV13-667FCXC datasheet, CY7C4141KV13-667FCXC pinout, CY7C4141KV13-667FCXC application, or CY7C4141KV13-667FCXC equivalent, key selection criteria include its 1.3-V core supply, 1.1/1.2-V POD or SSTL/HSTL I/O compatibility, on-die termination, per-bit deskew training, and on-chip ECC supporting <0.01 FITs/Mb soft error rate.
Technical Context
The device implements a dual-port architecture with one shared DDR address/command bus (CK/CK#) and two independent DDR data buses (DKA/DKB for input, QKA/QKB for output), where port A commands are sampled on CK rising edge and port B on CK falling edge. It supports two-word burst transfers on all accesses and uses SDR control signaling (RWA#, LDA#, etc.) synchronized to the same CK clock.
Internal features include programmable bus inversion (address/data), address parity protection with PE# flag, ZQ-based output impedance calibration, and IEEE 1149.1 JTAG boundary scan with 1.3-V LVCMOS signaling. The on-chip ECC detects and corrects all single-bit errors, reducing SER by four orders of magnitude versus prior SRAM generations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 144 Mbit, 4M × 36 configuration - supports wide-data-path packet buffers requiring 36-bit aligned storage. |
| Max Operating Frequency | 667 MHz - enables 1334 million random transactions per second (MT/s) in fully random access patterns. |
| Read/Write Latency | 5.0 / 3.0 clock cycles - defines minimum delay between command assertion and valid read data or write completion. |
| I/O Voltage Options | 1.1 V ±50 mV (POD) or 1.2 V ±50 mV (SSTL/HSTL) - ensures signal integrity on high-speed parallel buses with stub-series termination. |
| Core Supply | VDD = 1.3 V ±40 mV - low-voltage core reduces dynamic power while maintaining timing margins at 667 MHz. |
| Soft Error Rate | <0.01 FITs/Mb - achieved via on-chip ECC, critical for telecom infrastructure and aerospace systems exposed to cosmic radiation. |
| On-Die Termination | Programmable ODT for CK, address/command, and DQ inputs - eliminates external termination resistors and improves signal fidelity. |
Pinout & Package
Available in a 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA) package measuring 21 mm × 21 mm, Pb-free, with 1.0-mm ball pitch and standard thermal pad layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK, CK# | Differential address/command clock input | Samples port A commands on rising edge, port B on falling edge; defines system timing reference for all SDR control and DDR address signals. |
| DKA[1:0], DKA#[1:0], DKB[1:0], DKB#[1:0] | Differential data input clocks | Four dedicated differential pairs - DKA0/QKA0 control lower 18 bits of DQA/DQB, DKA1/QKA1 control upper 18 bits in ×36 mode. |
| QKA[1:0], QKA#[1:0], QKB[1:0], QKB#[1:0] | Differential data output clocks | Edge-aligned with DQA/DQB output data; enables precise capture of DDR outputs at receiver using source-synchronous timing. |
| DQA[35:0], DQB[35:0] | Bidirectional DDR data bus (Port A/B) | Two independent 36-bit data paths support simultaneous read+write or read+read operations without arbitration delay. |
| LDA#, LDB#, RWA#, RWB# | Synchronous port enable & R/W control | SDR-level command inputs - LDA#/RWA# pair controls Port A, LDB#/RWB# pair controls Port B, enabling true concurrency. |
| ZQ | Output impedance calibration reference | Connects to 240-Ω external resistor to ground; calibrates driver strength and ODT values across voltage/temperature corners. |
| AP, PE#, AINV | Address parity interface | AP provides even parity over A[20:0]; PE# asserts low on parity error; AINV enables bus inversion to minimize switching noise on address lines. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent DDR data ports | Enables concurrent read/write or read/read on Port A and Port B - eliminates memory arbitration bottlenecks in switch fabric controllers. |
| Per-bit deskew training sequence | Compensates for trace length mismatch across 36-bit DQ buses, ensuring setup/hold compliance at 1334 MT/s without manual PCB tuning. |
| On-chip ECC with SER <0.01 FITs/Mb | Corrects all single-bit upsets induced by alpha particles or cosmic rays - meets telecom NEBS Level 3 and aerospace radiation tolerance requirements. |
| Programmable bus inversion (AINV/DINVA/DINVB) | Reduces simultaneous switching noise and dynamic power by inverting data/address words with >50% bit transitions - measurable reduction in VDDQ current ripple. |
| JTAG 1149.1 test access port | Supports boundary scan testing, configuration register access, and debug visibility without requiring additional test pads or probe points. |
Applications
| High-Speed Network Switch Fabric | Telecom Line Card Buffering |
|---|---|
Use Scenario: Storing and forwarding variable-length packets in multi-terabit Ethernet switches with strict latency budgets. IC Role / Device Role / Timing Role: Dual-port SRAM acts as ingress/egress packet buffer with zero-contention concurrent access - Port A accepts incoming frames while Port B delivers outgoing frames. Use Value: 1334 MT/s random transaction rate sustains line-rate throughput at 400Gbps+ with sub-10ns read-to-write turnaround. | Use Scenario: Deep buffering for OC-192/STM-64 SONET/SDH framer interfaces handling jittered, bursty traffic. IC Role / Device Role / Timing Role: High-density ×36 SRAM serves as elastic store and pointer RAM in time-division multiplexing (TDM) cross-connect ASICs. Use Value: On-chip ECC ensures data integrity over 20+ year deployments in carrier-class central office environments. |
| Radar Signal Processing Memory | AI Accelerator On-Chip Cache |
Use Scenario: Real-time FFT and beamforming buffers in phased-array radar systems requiring deterministic low-latency access. IC Role / Device Role / Timing Role: Acts as ping-pong buffer between ADC/DAC interfaces and DSP cores - Port A streams digitized RF samples, Port B feeds processed beams. Use Value: 5.0-cycle read latency and 3.0-cycle write latency guarantee bounded processing delay for pulse-Doppler algorithms. | Use Scenario: Shared scratchpad memory between multiple tensor compute units in edge AI inference accelerators. IC Role / Device Role / Timing Role: Provides non-blocking, low-latency access to weight matrices and activation maps during convolution pipelines. Use Value: Dual DDR ports eliminate inter-unit memory contention, increasing effective bandwidth beyond single-port GDDR6 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-performance dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 144-Mbit QDR-IV, 667 MHz, but uses 1.5-V SSTL-15 I/O and lacks on-chip ECC | No built-in error correction - requires external ECC logic or higher system-level redundancy | Select when legacy 1.5-V infrastructure exists and SER requirements are less stringent than telecom/aerospace standards |
| AS7C3416000B-667BIN | 144-Mbit QDR-IV, same 1.3-V core and 1.1-V POD I/O, but no JTAG or ZQ calibration | Missing per-bit deskew training and boundary scan - increases PCB validation effort and limits field-debug capability | Choose for cost-sensitive industrial applications where full telecom-grade reliability and debug features are not required |
Compared with IDT72T36120L10BG and AS7C3416000B-667BIN, CY7C4141KV13-667FCXC uniquely integrates ECC, ZQ calibration, and JTAG in a 1.1-V POD interface - delivering verified soft-error immunity and production-test readiness without design compromises.
Availability
CY7C4141KV13-667FCXC is available at Aetrix Electronics and suitable for high-speed network switch fabric, telecom line card buffering, radar signal processing, and AI accelerator cache applications requiring stable component supply and long-term obsolescence management.
Supply support for CY7C4141KV13-667FCXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with emphasis on reliability, integration, and signal integrity.
CY7C4141KV13 belongs to the QDR™-IV HP SRAM product line, engineered specifically for deterministic, ultra-low-latency, high-throughput memory subsystems in packet-switched infrastructure and real-time signal processing systems.
FAQ
What is the function of the ZQ pin on CY7C4141KV13-667FCXC?
The ZQ pin connects to a 240-Ω external resistor to ground and enables automatic output driver and on-die termination (ODT) impedance calibration. This compensates for process, voltage, and temperature variations, ensuring consistent signal integrity across the 36-bit DQ buses at 1334 MT/s without manual resistor tuning.
Does CY7C4141KV13-667FCXC support both SSTL and POD I/O standards?
Yes - it supports JESD8-16A-compliant SSTL/HSTL (1.2 V ±50 mV or 1.25 V ±50 mV) and JESD8-24-compliant POD (1.1 V ±50 mV or 1.2 V ±50 mV). The selected standard is configured via mode registers; both require separate VDDQ supplies matched to the chosen voltage.
How does the address parity feature work on this SRAM?
The AP input provides even parity across A[20:0] (for ×36 mode); the PE# output asserts low when a parity mismatch is detected during address latching. PE# remains asserted until cleared by writing to the Configuration Register - enabling system-level fault logging and safe failover before corrupted addresses cause data loss.
Can CY7C4141KV13-667FCXC operate with only one data port enabled?
Yes - LDA# and LDB# are independent port enables. Driving LDB# high disables all Port B commands while allowing Port A to operate normally; similarly, LDA# high disables Port A. Internal operations continue, preserving data coherency and enabling graceful port shutdown for power management or fault isolation.
CY7C4141KV13-667FCXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 361-BBGA, FCBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR IV
- Memory Size:
- 144Mbit
- Memory Organization:
- 4M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.26V ~ 1.34V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 361-FCBGA (21x21)
CY7C4141KV13-667FCXC FAQ
1.How can I place an order for CY7C4141KV13-667FCXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C4141KV13-667FCXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C4141KV13-667FCXC reliable?
The price and inventory of CY7C4141KV13-667FCXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4141KV13-667FCXC is usually 5 days.
3.What payment methods are accepted for CY7C4141KV13-667FCXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4141KV13-667FCXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C4141KV13-667FCXC?
CY7C4141KV13-667FCXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C4141KV13-667FCXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C4141KV13-667FCXC?
For technical support, including CY7C4141KV13-667FCXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4141KV13-667FCXC requirements.
6.How does Aetrix verify that CY7C4141KV13-667FCXC is sourced from the original manufacturer or authorized distributors?
All CY7C4141KV13-667FCXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4141KV13-667FCXC meets industry standards.
7.What is the process for return or replacement of CY7C4141KV13-667FCXC?
All CY7C4141KV13-667FCXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4141KV13-667FCXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C4141KV13-667FCXC part is unused and in its original packaging.
Return procedure for CY7C4141KV13-667FCXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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