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Infineon Technologies CY7C4142KV13-106FCXC

Part No.:
CY7C4142KV13-106FCXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
361-BBGA, FCBGA
Datasheet:
AetrixCY7C4142KV13-106FCXC.pdf
Description:
IC SRAM 144MBIT PAR 361FCBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,456

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Product details

Overview

CY7C4142KV13-106FCXC from Cypress Semiconductor is a 144-Mbit QDR™-IV XP SRAM with 4M × 36 organization, 1066 MHz maximum operating frequency, 8-cycle read latency, and dual independent DDR data ports (A/B) supporting concurrent read/write transactions. It operates at VDD = 1.3 V ± 40 mV and VDDQ = 1.2 V ± 50 mV, and is deployed in high-bandwidth packet buffering for network line cards.

For engineers reviewing the CY7C4142KV13-106FCXC datasheet, CY7C4142KV13-106FCXC pinout, CY7C4142KV13-106FCXC application, or CY7C4142KV13-106FCXC equivalent, key selection criteria include random transaction rate (2132 MT/s), on-die termination programmability, per-bit deskew training, address parity protection, and JTAG 1149.1 compliance for production testability.

Technical Context

This QDR-IV XP SRAM uses an eight-bank architecture enabling one access per bank per clock cycle, with addresses for port A latched on CK rising edge and port B on CK falling edge. Dual DDR data ports (DQA/DQB) operate with separate differential input clocks (DKA/DKB) and output clocks (QKA/QKB), all synchronized to a single SDR control interface.

It integrates on-chip ECC correcting single-bit errors (SER < 0.01 FITs/Mb), bus inversion (programmable per address/data), and ZQ-based output impedance calibration. Address parity (AP) and error flag (PE#) provide real-time integrity monitoring, while LDA#/LDB# and RWA#/RWB# enable synchronous command gating per port.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization144 Mbit, 4M × 36 configuration - supports wide-data-path systems requiring low-latency burst transfers
Max Operating Frequency1066 MHz - enables 2132 MT/s total random transaction rate for high-throughput memory subsystems
Read/Write Latency8.0 / 5.0 clock cycles - fixed deterministic timing critical for synchronous packet processing pipelines
Core & I/O VoltageVDD = 1.3 V ± 40 mV; VDDQ = 1.2 V ± 50 mV - defines power delivery requirements and noise margin constraints
Soft Error Rate (SER)< 0.01 FITs/Mb - achieved via on-chip ECC, reducing uncorrectable errors in radiation-prone telecom environments
Signaling StandardHSTL/SSTL (JESD8-16A) and POD (JESD8-24) - ensures compatibility with high-speed FPGA and ASIC memory controllers
Package361-ball FCBGA, 21 × 21 mm - provides thermal and electrical performance suitable for dense PCB layouts

Pinout & Package

Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, RoHS-compliant, Pb-free.

Pin/TerminalCircuit RoleDesign Meaning
CK, CK#Differential address/command clock inputSamples port A addresses on rising edge, port B on falling edge; defines system timing reference
DKA[1:0], DKA#[1:0], DKB[1:0], DKB#[1:0]Differential data input clocksControl timing of DQA/DQB write sampling; enables per-port, per-byte skew compensation
QKA[1:0], QKA#[1:0], QKB[1:0], QKB#[1:0]Differential data output clocksEdge-align valid DQA/DQB read data; required for source-synchronous capture by controller
DQA[35:0], DQB[35:0]Bidirectional DDR data bus (×36 mode)Two independent 36-bit ports support full-duplex operation without arbitration overhead
LDA#, LDB#Synchronous load enable (port A/B)Gates command acceptance per port; allows dynamic port disable during maintenance or error recovery
RWA#, RWB#Synchronous read/write select (port A/B)Combined with LDA#/LDB# to decode command type; enables precise per-cycle transaction control
ZQ/ZTOutput impedance calibration referenceConnects to 240 Ω ± 1% resistor to ground; calibrates driver strength across voltage/temperature
AP, PE#Address parity input / error flag outputAP provides even parity over A[20:0]; PE# asserts low on mismatch, latching until cleared via config register

Key Features

FeatureDesign Value
Eight-bank concurrent accessEnables one access per bank per cycle - sustains peak bandwidth under fully random address patterns
Programmable on-die termination (ODT)Configurable per-pin for CK, address/command, and DQ - eliminates external termination resistors and saves board area
Per-bit deskew training sequenceAutomated calibration using TMS/TDI - compensates for trace length mismatches across 36-bit DQ buses
Bus inversion (address & data)Reduces simultaneous switching noise by up to 50% - lowers EMI and improves signal integrity in dense routing
JTAG 1149.1 boundary scanFull IEEE 1149.1 compliance with 1.3-V LVCMOS signaling - enables in-system test and debug without physical probes

Applications

High-Speed Network Line CardsTelecom Baseband Processing

Use Scenario: Buffering variable-length packets in 100G/400G Ethernet switch fabric ASIC interfaces.

IC Role / Device Role / Timing Role: Low-latency, dual-port SRAM acting as ingress/egress packet buffer with deterministic 8-cycle read response.

Use Value: Concurrent port A (ingress) and port B (egress) operations eliminate arbitration stalls, sustaining 2132 MT/s throughput under real traffic loads.

Use Scenario: Storing channelized IQ samples in massive MIMO radio units with real-time FFT/IFFT pipelines.

IC Role / Device Role / Timing Role: Wide (×36) data path memory providing burst-aligned sample storage synchronized to baseband clock domains.

Use Value: 4M × 36 organization matches 12-bit × 3-sample complex data packing, minimizing address translation overhead.

Test Equipment Memory SubsystemsHigh-Frequency Trading Accelerators

Use Scenario: Capturing high-resolution waveform data streams from multi-channel digitizers at >1 GS/s aggregate rates.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM serving as deep acquisition buffer with per-cycle command granularity.

Use Value: Fixed 5-cycle write latency enables precise timestamp alignment across channels; ECC prevents corruption in long capture sessions.

Use Scenario: Caching market order book snapshots and executing ultra-low-latency matching logic in FPGA-based trading engines.

IC Role / Device Role / Timing Role: Dual-port memory holding bid/ask arrays with independent read (matching engine) and write (feed handler) access.

Use Value: No contention between feed updates and match queries - guarantees sub-10 ns decision latency under peak message load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36120L10BGQDR-IV, 144-Mbit, 4M × 36, but max frequency 933 MHz (1866 MT/s); no on-chip ECCLacks SER mitigation - unsuitable for mission-critical telecom infrastructure where soft errors must be correctedSelect when cost sensitivity outweighs ECC requirement and 133 MHz lower frequency is acceptable
MT47H128M16RT-25EDDR2 SDRAM, 2-Gbit, ×16, 250 MHz clock (500 MT/s); asynchronous reset, no dual-port concurrencyRequires external arbitration and refresh management; higher latency variability undermines deterministic timingChoose only for legacy DDR2 controller compatibility where QDR-IV interface redesign is impractical

Compared with IDT72T36120L10BG and MT47H128M16RT-25E, CY7C4142KV13-106FCXC delivers 133 MHz higher frequency, integrated ECC for SER reduction, and true hardware-concurrent dual-port access - making it optimal for new designs demanding guaranteed throughput and reliability.

Availability

CY7C4142KV13-106FCXC is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband processing, test equipment memory subsystems, and high-frequency trading accelerators requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C4142KV13-106FCXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C4142KV13 belongs to the QDR™-IV XP SRAM product line, engineered specifically for deterministic, high-random-transaction-rate buffering in ASIC/FPGA-based communications infrastructure.

FAQ

What is the minimum supported VDDQ voltage tolerance for reliable operation?

The device requires VDDQ = 1.2 V ± 50 mV when operating in HSTL/SSTL mode, as specified in JESD8-16A. Operation outside this range risks setup/hold violations on DQ inputs and may cause data corruption during high-speed bursts. The ±50 mV window is validated across temperature (-40°C to +95°C) and process corners.

How does the address parity error flag (PE#) behave after detection?

PE# asserts low immediately upon detecting an address parity mismatch and remains latched low until explicitly cleared by writing to the Configuration Register's PARITY_CLEAR bit. It does not auto-clear on subsequent valid accesses, ensuring persistent error indication for system-level fault logging and recovery sequencing.

Can the ZQ calibration pin be left unconnected during normal operation?

No. ZQ must be connected to a precision 240 Ω ± 1% resistor to ground for output driver impedance calibration. Leaving it floating disables ODT tuning, causing output swing and timing margin degradation - especially critical for 1066 MHz operation where signal integrity margins are tight.

Is bus inversion enabled by default on power-up?

Bus inversion is disabled by default for both address and data buses after power-on reset. It must be explicitly enabled via the Configuration Register's AINV_EN and DINVA/DINVB bits. Default disable ensures predictable startup behavior and avoids unintended polarity reversal during initialization sequences.

CY7C4142KV13-106FCXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
361-BBGA, FCBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR IV
Memory Size:
144Mbit
Memory Organization:
4M x 36
Memory Interface:
Parallel
Clock Frequency:
1.066 GHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.26V ~ 1.34V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
361-FCBGA (21x21)

CY7C4142KV13-106FCXC FAQ

1.How can I place an order for CY7C4142KV13-106FCXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C4142KV13-106FCXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C4142KV13-106FCXC reliable?

The price and inventory of CY7C4142KV13-106FCXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C4142KV13-106FCXC is usually 5 days.

3.What payment methods are accepted for CY7C4142KV13-106FCXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C4142KV13-106FCXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C4142KV13-106FCXC?

CY7C4142KV13-106FCXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C4142KV13-106FCXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C4142KV13-106FCXC?

For technical support, including CY7C4142KV13-106FCXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C4142KV13-106FCXC requirements.

6.How does Aetrix verify that CY7C4142KV13-106FCXC is sourced from the original manufacturer or authorized distributors?

All CY7C4142KV13-106FCXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C4142KV13-106FCXC meets industry standards.

7.What is the process for return or replacement of CY7C4142KV13-106FCXC?

All CY7C4142KV13-106FCXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C4142KV13-106FCXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C4142KV13-106FCXC part is unused and in its original packaging.

Return procedure for CY7C4142KV13-106FCXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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