Infineon Technologies CY7C4142KV13-933FCXC

Overview

CY7C4142KV13-933FCXC from Cypress Semiconductor is a 144-Mbit QDR™-IV XP SRAM configured as 4M × 36, operating at 933 MHz with 2132 MT/s random transaction rate, 8-cycle read latency, and dual DDR bidirectional data ports (A/B) for concurrent access in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C4142KV13-933FCXC datasheet, CY7C4142KV13-933FCXC pinout, CY7C4142KV13-933FCXC application, or CY7C4142KV13-933FCXC equivalent, key selection criteria include its 361-ball FCBGA package, on-die termination (ODT), per-bit deskew training, address parity protection, and on-chip ECC supporting <0.01 FITs/Mb soft error rate.

Technical Context

This QDR-IV XP SRAM uses an eight-bank architecture enabling one access per bank per clock cycle, with address latching on CK rising edge (Port A) and falling edge (Port B). It supports two-word burst transfers on all accesses and employs separate differential clock domains: CK/CK# for address/command, DKA/DKB pairs for data input, and QKA/QKB pairs for data output.

Control signaling operates at single data rate (SDR), while both data ports use double data rate (DDR) I/O with HSTL/SSTL or POD-compatible signaling (VDDQ = 1.1 V or 1.2 V). Core voltage is fixed at 1.3 V ± 40 mV, and impedance calibration is performed via the ZQ pin using internal self-calibration.

Key Specifications

Pinout & Package

Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-performance QDR SRAM applications.

Compared with IDT72T36150L10BG and MT40A512M16LY-075E:E, CY7C4142KV13-933FCXC uniquely delivers concurrent dual-port access, on-chip ECC, and automatic deskew - making it optimal for deterministic, radiation-tolerant, high-transaction-rate systems where data integrity and timing predictability are non-negotiable.

Availability

CY7C4142KV13-933FCXC is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card buffering, radar signal processing, and automated test equipment requiring stable component supply and long-term lifecycle support.

Supply support for CY7C4142KV13-933FCXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and infrastructure applications.

This device belongs to the QDR™-IV XP SRAM product line, engineered specifically for ultra-low-latency, high-random-transaction-rate memory subsystems in networking, defense, and test instrumentation where deterministic timing and data reliability are critical.

FAQ

What is the difference between CY7C4142KV13-933FCXC and CY7C4122KV13-933FCXC?

CY7C4142KV13-933FCXC is a 4M × 36 (144-Mbit) configuration with 21 address bits, while CY7C4122KV13-933FCXC is 8M × 18 (also 144-Mbit) with 22 address bits. The 4M × 36 variant supports wider data paths for parallel processing, whereas the 8M × 18 offers deeper addressing for sequential access patterns. Pinouts differ in DQ and clock assignments to match their respective bus widths.

Does CY7C4142KV13-933FCXC support JTAG boundary scan in-system?

Yes - it implements IEEE 1149.1 JTAG with TMS, TDI, TCK, TDO, and TRST# pins operating at 1.3-V LVCMOS levels. The TAP controller supports instruction register loading, data register scanning, and boundary scan testing of all I/O pins, enabling production test and debug without physical probe access.

How does the on-die termination (ODT) function in this SRAM?

ODT is programmable per signal group (clock, address/command, DQ) via configuration registers. It provides calibrated resistive termination (typically 40–120 Ω) directly on-chip, eliminating external resistors and reducing PCB area and signal reflections. Termination strength is adjusted using the ZQ pin's external 240 Ω reference resistor.

Can CY7C4142KV13-933FCXC operate with mixed I/O voltage standards?

No - VDDQ must be set to a single value: either 1.1 V ± 50 mV (for POD signaling) or 1.2 V ± 50 mV (for HSTL/SSTL). All I/O banks share the same VDDQ supply; mixing standards on one device is electrically unsupported and violates JESD8-16A and JESD8-24 compliance requirements.