Infineon Technologies CY7C4142KV13-933FCXI

Overview

CY7C4142KV13-933FCXI from Cypress Semiconductor is a 144-Mbit QDR™-IV XP SRAM configured as 4M × 36, operating at 933 MHz with 8-cycle read latency and 5-cycle write latency, supporting concurrent dual-port DDR transactions for high-throughput networking and packet buffering applications.

For engineers reviewing the CY7C4142KV13-933FCXI datasheet, CY7C4142KV13-933FCXI pinout, CY7C4142KV13-933FCXI application, or CY7C4142KV13-933FCXI equivalent, key selection criteria include its 361-ball FCBGA package, on-die termination (ODT), per-bit deskew training, address parity protection, and on-chip ECC for soft error mitigation in mission-critical memory subsystems.

Technical Context

This SRAM implements an eight-bank architecture enabling one access per bank per clock cycle, with dual independent bidirectional data ports (A and B) sharing a single DDR address port and SDR control signaling. Clocking uses three differential pairs: CK/CK# for address/command, DKA/DKA#/DKB/DKB# for data input, and QKA/QKA#/QKB/QKB# for data output.

It supports HSTL/SSTL (1.2 V/1.25 V) and POD (1.1 V/1.2 V) I/O standards, programmable bus inversion on address/data lines, and JTAG 1149.1 boundary scan with 1.3-V LVCMOS signaling. Internal self-calibration via ZQ pin ensures output impedance matching to system bus impedance.

Key Specifications

Pinout & Package

Package: 361-ball Fine-Pitch Chip Scale Ball Grid Array (FCBGA), 21 mm × 21 mm, RoHS-compliant, with 0.8 mm ball pitch and standard thermal pad layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T36150L10BG and AS7C3256PFS-10BIN, CY7C4142KV13-933FCXI uniquely balances 1866 MT/s throughput, on-chip ECC, and programmable ODT in a thermally robust FCBGA package-making it optimal for telecom infrastructure where reliability and timing margin are co-constrained.

Availability

CY7C4142KV13-933FCXI is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, telecom baseband processing, and radar signal processing requiring stable component supply and long-term lifecycle support.

Supply support for CY7C4142KV13-933FCXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

CY7C4142KV13 belongs to the QDR™-IV XP SRAM product line, engineered specifically for deterministic, low-latency, dual-port memory subsystems in 100G+ networking, 5G infrastructure, and real-time signal processing equipment.

FAQ

What is the difference between CY7C4142KV13-933FCXI and CY7C4122KV13-933FCXI?

CY7C4142KV13-933FCXI is a 4M × 36 (144-Mbit) configuration with 21 address bits, while CY7C4122KV13-933FCXI is 8M × 18 (also 144-Mbit) with 22 address bits. The former supports wider data paths and reduced address bus width, simplifying FPGA pinout for 36-bit interfaces; both share identical timing, packaging, and feature set including ECC and ODT.

Does CY7C4142KV13-933FCXI require external termination resistors?

No. It integrates programmable on-die termination (ODT) for CK/CK#, address/command, and DQ buses, configurable via mode registers. External resistors are only needed for ZQ calibration (240 Ω ± 1% to ground) and VREF reference (0.6 V), not for signal termination.

How does the deskew training sequence work on this device?

The device executes an automated per-bit deskew training sequence during initialization, adjusting internal delay elements for each DQ line relative to its associated QKx/QKx# clock pair. Training results are stored in internal registers and applied dynamically, ensuring setup/hold compliance across voltage, temperature, and process variation without host intervention.

Can CY7C4142KV13-933FCXI operate with 1.1-V VDDQ in POD mode and 1.3-V VDD simultaneously?

Yes. The device supports independent power domains: VDD = 1.3 V ± 40 mV for core logic and VDDQ = 1.1 V ± 50 mV for POD I/Os. This dual-supply operation is explicitly validated in the datasheet and enables optimized power delivery-lower I/O voltage reduces switching power while maintaining signal integrity via pseudo-open-drain drive strength.