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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY7S1041G-10ZSXI

Name: CY7S1041G-10ZSXI
Brand: Infineon Technologies
SKU: CY7S1041G-10ZSXI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY7S1041G-10ZSXI

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: CY7S1041G-10ZSXI.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

CY7S1041G-10ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep-Sleep mode (15 µA), 10 ns access time, and TTL-compatible I/O - used in industrial control modules requiring deterministic memory access and single-bit error resilience.

For engineers reviewing the CY7S1041G-10ZSXI datasheet, CY7S1041G-10ZSXI pinout, CY7S1041G-10ZSXI application, or CY7S1041G-10ZSXI equivalent, key selection criteria include ECC-enabled data integrity, multi-voltage support (1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V), byte-select write capability via BHE/ BLE, and TSOP II package compatibility for legacy board refresh.

Technical Context

The CY7S1041G-10ZSXI implements a synchronous-free, fully asynchronous SRAM architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read access without automatic write-back. Its PowerSnooze™ Deep-Sleep mode activates via dedicated DS pin assertion (LOW), reducing current to 15 µA while retaining data at 1.0 V.

It supports three independent V_CC ranges with distinct speed grading: 10 ns at 2.2–3.6 V and 4.5–5.5 V, and 15 ns at 1.65–2.2 V. Byte-level access is controlled by BHE (I/O8–I/O15) and BLE (I/O0–I/O7), enabling partial writes without full-word overhead.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	4 Mbit (256K words × 16 bits) - provides 512 KB of word-accessible storage for real-time firmware buffers or configuration tables.
Access Time (t_AA)	10 ns (at 2.2–3.6 V and 4.5–5.5 V) - enables direct interfacing with 100 MHz microcontrollers without wait states.
Deep-Sleep Current (I_DS)	15 µA - allows battery-backed operation for >1 year in industrial logging nodes with infrequent wake cycles.
ECC Functionality	Single-bit error detection and correction per 16-bit word - ensures data integrity in radiation-prone or long-term storage applications without external logic.
V_CC Operating Ranges	1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - supports mixed-voltage system integration including legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V domains.
Output Enable Propagation (t_OE)	10 ns (max) - guarantees fast read turnaround for burst-mode data acquisition systems.
Data Retention Voltage	1.0 V - permits retention during brown-out conditions where main supply drops but backup rail remains active.

Pinout & Package

Package: 44-pin TSOP II (Type II, 400-mil width), JEDEC standard, surface-mount, lead-free.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus supporting full 256K-word addressing; A0–A17 directly map to memory location without multiplexing.
I/O0–I/O15	Bidirectional Data Bus	16-bit parallel interface; supports simultaneous read/write of full word or byte-select via BHE/ BLE.
CE	Chip Enable	Active-Low global enable; device enters standby when CE HIGH (CMOS input threshold: V_CC – 0.2 V).
WE	Write Enable	Active-Low write strobe; initiates write cycle only when CE and WE both LOW and address stable.
OE	Output Enable	Active-Low read control; enables I/O drivers only when CE and OE both LOW - prevents bus contention.
BHE / BLE	Byte Enable Controls	BHE enables upper byte (I/O8–I/O15); BLE enables lower byte (I/O0–I/O7); both LOW for full-word access.
DS	Deep-Sleep Input	Active-Low entry to ultra-low-power retention mode; deassert HIGH to resume normal operation within t_DS = 100 ns.
V_CC, V_SS	Power Supply / Ground	Dual V_CC pins (pins 11 & 34) and dual V_SS (pins 12 & 33) reduce IR drop and improve noise immunity in high-speed operation.

Key Features

Feature	Design Value
Embedded ECC Logic	On-die Hamming-code encoder/decoder corrects single-bit errors per 16-bit word without CPU intervention or external circuitry.
PowerSnooze™ Deep-Sleep Mode	15 µA retention current at 1.0 V V_CC enables >1-year battery life in always-on monitoring systems with periodic wake-up intervals.
Multi-Voltage Operation	Three discrete V_CC ranges allow seamless integration into mixed-supply designs - no level-shifting required across 1.8 V, 3.3 V, or 5 V subsystems.
TTL-Compatible I/O	Input thresholds and output drive meet TTL voltage levels (V_OH ≥ 2.4 V @ 5 V, V_OL ≤ 0.4 V), ensuring interoperability with legacy microcontrollers and FPGAs.
Byte-Write Selectivity	Independent BHE and BLE controls permit partial writes to upper or lower byte - reduces bus traffic and eliminates unnecessary full-word updates.

Applications

Industrial PLC Data Buffers

Medical Diagnostic Imaging Cache

Use Scenario: Real-time buffering of sensor inputs and control outputs in programmable logic controllers operating in harsh EMI environments.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state access for cyclic scan execution and deterministic I/O update timing.

Use Value: ECC ensures integrity of critical control state variables during extended field deployment where bit flips could cause unsafe actuation.

Use Scenario: Temporary frame storage in portable ultrasound devices during image acquisition before compression and transmission.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory buffer interfacing directly with ADC/DAC controllers and FPGA pixel pipelines.

Use Value: 10 ns access time enables real-time capture of 12-bit grayscale frames at >30 fps without pipeline stalls or FIFO overflow.

Avionics Flight Recorder Memory

Smart Grid Protection Relay Storage

Use Scenario: Nonvolatile event logging in crash-survivable flight data recorders where power interruption is frequent and data corruption unacceptable.

IC Role / Device Role / Timing Role: ECC-protected SRAM holding last 10+ seconds of critical telemetry prior to power loss or emergency shutdown.

Use Value: 1.0 V data retention allows continued storage during capacitor hold-up periods after main power failure.

Use Scenario: Storing fault waveform captures and protection settings in ANSI C37.90-compliant digital relays deployed in substations.

IC Role / Device Role / Timing Role: Deterministic-access memory for time-synchronized sampling and post-fault analysis buffers.

Use Value: Multi-range V_CC support enables direct connection to both 3.3 V FPGA logic and 5 V analog front-end supplies without isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM with ECC applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV25616BLL-10MLI	No embedded ECC; requires external error-handling logic; 10 ns access, 3.3 V only; 48-pin TSOPII package.	Lacks on-chip error correction - increases BOM count and firmware complexity for safety-critical use.	Select only if ECC is handled externally and system operates exclusively at 3.3 V with no voltage flexibility needed.
AS6C4008-10TIN	4-Mbit SRAM without ECC; 10 ns access; 2.7–3.6 V range; 32-pin SOJ package; no Deep-Sleep mode.	Higher standby current (30 µA typical) and no low-power retention - unsuitable for battery-backed applications.	Choose only for cost-sensitive, non-safety-critical applications where ECC and ultra-low-power modes are not required.

Compared with IS61WV25616BLL-10MLI and AS6C4008-10TIN, the CY7S1041G-10ZSXI uniquely integrates ECC and PowerSnooze™ in a single chip across three voltage ranges - eliminating external error logic and enabling multi-decade battery life in always-on edge nodes.

Availability

CY7S1041G-10ZSXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics data loggers, and smart grid protection relays requiring stable component supply across extended product lifecycles.

Supply support for CY7S1041G-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100 standards.

The CY7S1041G series belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and aerospace applications demanding ECC resilience, multi-voltage compatibility, and ultra-low-power retention without external support components.

FAQ

Does CY7S1041G-10ZSXI support automatic error correction write-back?

No. The embedded ECC logic detects and corrects single-bit errors during read operations only - corrected data appears on the I/O bus, but no automatic write-back to memory occurs. System firmware must explicitly initiate a write to preserve the corrected value if persistent storage is required.

What is the function of the DS pin, and how does it interact with CE and OE?

The DS (Deep-Sleep) pin is independent of CE and OE: when DS = LOW, the device enters 15 µA retention mode regardless of CE/OE states. CE and OE retain their normal functions only when DS = HIGH. Asserting DS LOW overrides all other control inputs and disables internal clocks and drivers.

Can CY7S1041G-10ZSXI operate across multiple V_CC ranges simultaneously?

No. Only one V_CC range may be powered at a time - the device must be configured for either 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V. Mixing voltages violates absolute maximum ratings and risks latch-up or parametric failure. Voltage selection is determined by system design, not runtime switching.

Is the ERR pin present on CY7S1041G-10ZSXI?

No. The ERR pin is exclusive to the "E" suffix variant (e.g., CY7S1041GE). The CY7S1041G-10ZSXI lacks the ERR output; error indication is limited to observing corrected data on the I/O bus - no dedicated flag signal is provided.

CY7S1041G-10ZSXI Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 10ns

Access Time:: 10 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

CY7S1041G-10ZSXI FAQ

1.How can I place an order for CY7S1041G-10ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7S1041G-10ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7S1041G-10ZSXI reliable?

The price and inventory of CY7S1041G-10ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1041G-10ZSXI is usually 5 days.

3.What payment methods are accepted for CY7S1041G-10ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1041G-10ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7S1041G-10ZSXI?

CY7S1041G-10ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7S1041G-10ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7S1041G-10ZSXI?

For technical support, including CY7S1041G-10ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1041G-10ZSXI requirements.

6.How does Aetrix verify that CY7S1041G-10ZSXI is sourced from the original manufacturer or authorized distributors?

All CY7S1041G-10ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1041G-10ZSXI meets industry standards.

7.What is the process for return or replacement of CY7S1041G-10ZSXI?

All CY7S1041G-10ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1041G-10ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7S1041G-10ZSXI part is unused and in its original packaging.

Return procedure for CY7S1041G-10ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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