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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY7S1041G-10ZSXIT

Name: CY7S1041G-10ZSXIT
Brand: Infineon Technologies
SKU: CY7S1041G-10ZSXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY7S1041G-10ZSXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: CY7S1041G-10ZSXIT.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

CY7S1041G-10ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep-Sleep mode (15 µA), and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and delivers 10 ns access time at 5 V. Used in industrial control modules requiring reliable data retention during intermittent power loss.

For engineers reviewing the CY7S1041G-10ZSXIT datasheet, CY7S1041G-10ZSXIT pinout, CY7S1041G-10ZSXIT application, or CY7S1041G-10ZSXIT equivalent, key selection criteria include ECC-enabled single-bit error correction, Deep-Sleep current specification, byte-enable write control (BHE/ BLE), DS input behavior, and TSOP II package compatibility with legacy SRAM footprints.

Technical Context

The CY7S1041G-10ZSXIT implements a synchronous-free, fully asynchronous interface with independent byte-write enable logic (BHE for I/O8–I/O15, BLE for I/O0–I/O7) and dedicated Deep-Sleep (DS) control that disables all internal circuitry except data-retention latches. Its ECC engine detects and corrects single-bit errors on read access without automatic write-back.

It supports three distinct V_CC operating windows with corresponding speed grades: 10 ns at 4.5–5.5 V and 2.2–3.6 V, and 15 ns at 1.65–2.2 V. The ERR pin (present only on "E" suffix variants) signals corrected single-bit errors but is not implemented in the -10ZSXIT variant per ordering code decoding and pinout diagrams.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	4 Mbit (256K words × 16 bits); provides 512 KB of word-accessible storage for firmware buffers or real-time data logging.
Access time (t_AA)	10 ns at V_CC = 4.5–5.5 V; enables direct replacement in 10 ns SRAM-based microcontroller address/data bus systems.
Deep-Sleep current (I_DS)	15 µA max; sustains data retention at 1.0 V while minimizing battery drain in always-on industrial sensors.
Voltage ranges	1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V; allows drop-in use across legacy 5 V, modern 3.3 V, and low-voltage 1.8 V systems without level-shifting.
ECC capability	Embedded single-bit error detection and correction per 16-bit word; improves system reliability in radiation-prone or long-life deployments without external logic.
Byte write control	BHE and BLE inputs enable independent upper/lower byte writes; eliminates need for external byte-masking logic in 8-bit peripheral interfacing.
Package	44-pin TSOP II (ZSXIT suffix); industry-standard 400-mil body with 0.8 mm pitch, compatible with automated SMT placement and reflow profiles.

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), 400-mil width, JEDEC MO-141AC compliant, lead-free (Pb-free).

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address inputs	18-bit address bus supporting full 256K-word addressing; A0 least significant, A17 most significant.
I/O0–I/O15	Bi-directional data bus	16-bit parallel interface; supports full-word, upper-byte (I/O8–I/O15), or lower-byte (I/O0–I/O7) transfers.
CE	Chip Enable	Active-low chip select; device enters standby when CE high, enabling multi-chip memory expansion.
OE	Output Enable	Active-low read strobe; controls output drivers independently of CE to support pipelined read cycles.
WE	Write Enable	Active-low write strobe; initiates write cycle when CE and WE both low; timing-critical for setup/hold compliance.
BHE	Byte High Enable	Active-low control for upper byte (I/O8–I/O15); enables partial writes without disturbing lower byte contents.
BLE	Byte Low Enable	Active-low control for lower byte (I/O0–I/O7); used with BHE for granular 8-bit memory updates.
DS	Deep-Sleep input	Active-low entry to ultra-low-power retention mode; asserts internal power gating while preserving stored data.
VCC / VSS	Power supply / Ground	Dual VCC pins (pins 11 & 34) reduce IR drop; separate ground pins (pins 12 & 33) improve noise immunity in high-speed operation.

Key Features

Feature	Design Value
PowerSnooze™ Deep-Sleep mode	15 µA max current at full V_CC range ensures <1 µW static power in retention-critical for battery-backed PLC modules.
Embedded ECC logic	On-die Hamming-code encoder/decoder corrects single-bit errors per 16-bit access without CPU intervention or latency penalty.
TTL-compatible I/O	VIH/VIL thresholds match legacy 5 V TTL logic families, enabling direct interface with older microcontrollers and FPGAs.
Multi-voltage operation	Single part supports 1.8 V, 3.3 V, and 5 V systems via three discrete V_CC ranges-reduces BOM count across product generations.
Byte-selectable write architecture	BHE/ BLE dual-enable allows atomic 8-bit updates in 16-bit memory space-essential for mixed-endian protocol stacks and register overlays.

Applications

Industrial PLC Data Buffer

Medical Diagnostic Imaging Cache

Use Scenario: Stores real-time sensor fusion outputs and motion-control command queues in programmable logic controllers operating in unregulated factory environments.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between ARM Cortex-M7 core and FPGA-based I/O engine; absorbs burst writes during servo loop execution.

Use Value: 10 ns access time meets tight 100 MHz bus timing; ECC prevents silent corruption in safety-critical motion profiles; Deep-Sleep preserves state during brownouts.

Use Scenario: Caches raw pixel frames from ultrasound transducer arrays before GPU-accelerated beamforming in portable diagnostic devices.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfaced to 16-bit parallel camera interface; supports concurrent read (GPU fetch) and write (ADC stream) via OE/WE separation.

Use Value: Dual V_CC support allows 3.3 V I/O with 1.8 V core logic; byte enables permit selective update of metadata headers without overwriting image data.

Railway Signaling Event Logger

Avionics Flight Data Recorder Buffer

Use Scenario: Captures GPS-synchronized train position events and switch status transitions in EN 5012x-certified signaling hardware with extended temperature tolerance.

IC Role / Device Role / Timing Role: Nonvolatile event buffer using external backup capacitor; retains last 10,000 entries during 200 ms power interruption.

Use Value: 1.0 V data retention spec guarantees integrity down to capacitor decay threshold; industrial –40°C to +85°C rating ensures field reliability.

Use Scenario: Temporarily stores ARINC 429 bus messages and sensor telemetry prior to compression and storage on solid-state flight recorder media.

IC Role / Device Role / Timing Role: High-integrity intermediate buffer between avionics backplane and encryption ASIC; ECC prevents bit-flip-induced checksum failures.

Use Value: Embedded ECC eliminates need for software parity checks-reducing CPU load and deterministic latency in DO-254-compliant designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM with ECC applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV25616EDBLL-10MLI	No embedded ECC; requires external error-handling logic; 10 ns access, 3.3 V only; 48-pin TSOPII.	Lacks hardware-level error correction-unsuitable for safety-critical logging where silent data corruption is unacceptable.	Select only if ECC is handled at system level and voltage flexibility is not required.
AS6C4008-10TIN	4-Mbit × 8-bit organization; no ECC; 10 ns; 2.7–3.6 V only; 32-pin SOJ.	Half the data bus width requires two devices for 16-bit interface; increases PCB area and routing complexity.	Consider only for cost-sensitive 8-bit MCU designs where ECC is unnecessary and board space permits dual-SRAM layout.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-10TIN, the CY7S1041G-10ZSXIT uniquely combines 16-bit bus width, triple-voltage support, hardware ECC, and 10 ns access in a single 44-pin TSOP II package-enabling higher reliability and smaller footprint in mission-critical embedded systems.

Availability

CY7S1041G-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging cache subsystems, and railway event logging requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY7S1041G-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its SRAM portfolio with full technical and supply-chain continuity.

The CY7S1041G series belongs to Infineon's industrial-grade asynchronous SRAM product line, engineered for high-reliability embedded systems demanding ECC, ultra-low-power retention, and multi-voltage interoperability.

FAQ

Does CY7S1041G-10ZSXIT include the ERR pin?

No. The "-10ZSXIT" ordering code corresponds to the base CY7S1041G variant without ERR functionality. Only parts with "E" in the suffix (e.g., CY7S1041GE) feature the ERR output pin. Pinout diagrams confirm absence of ERR on TSOP II packages marked ZSXIT.

What is the minimum V_CC required to maintain data in Deep-Sleep mode?

The device guarantees data retention down to 1.0 V in Deep-Sleep mode, as specified in the Data Retention Characteristics table. This allows operation with decaying backup capacitors or ultra-low-power auxiliary supplies without data loss.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. Asserting both BHE and BLE low enables full 16-bit writes to I/O0–I/O15. The datasheet truth table confirms that simultaneous assertion is valid and results in complete word access-no conflict or undefined behavior occurs.

Is the 10 ns access time guaranteed across all V_CC ranges?

No. The 10 ns access time is guaranteed only for V_CC = 4.5–5.5 V and 2.2–3.6 V. At 1.65–2.2 V, the maximum access time is 15 ns. Speed grade is voltage-range dependent, not universal across the full operating envelope.

CY7S1041G-10ZSXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 10ns

Access Time:: 10 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

CY7S1041G-10ZSXIT FAQ

1.How can I place an order for CY7S1041G-10ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7S1041G-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7S1041G-10ZSXIT reliable?

The price and inventory of CY7S1041G-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1041G-10ZSXIT is usually 5 days.

3.What payment methods are accepted for CY7S1041G-10ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1041G-10ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7S1041G-10ZSXIT?

CY7S1041G-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7S1041G-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7S1041G-10ZSXIT?

For technical support, including CY7S1041G-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1041G-10ZSXIT requirements.

6.How does Aetrix verify that CY7S1041G-10ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY7S1041G-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1041G-10ZSXIT meets industry standards.

7.What is the process for return or replacement of CY7S1041G-10ZSXIT?

All CY7S1041G-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1041G-10ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7S1041G-10ZSXIT part is unused and in its original packaging.

Return procedure for CY7S1041G-10ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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