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Infineon Technologies CY7S1041G30-10BVXIT
- Part No.:
- CY7S1041G30-10BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7S1041G30-10BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,093
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Product details
Overview
CY7S1041G30-10BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep-Sleep mode (IDS = 15 µA), 10 ns access time, and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and is used in industrial control systems requiring reliable data retention during intermittent power states.
For engineers reviewing the CY7S1041G30-10BVXIT datasheet, CY7S1041G30-10BVXIT pinout, CY7S1041G30-10BVXIT application, or CY7S1041G30-10BVXIT equivalent, this page provides verified package mapping (48-ball VFBGA, BVXI footprint), ECC error indication behavior, Deep-Sleep activation logic (DS pin low), byte-write control via BHE/ BLE, and real-world timing margins under industrial temperature conditions (–40 °C to +85 °C).
Technical Context
The CY7S1041G30-10BVXIT implements a synchronous-free, fully asynchronous SRAM architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read access without automatic write-back. Its PowerSnooze™ mode uses a dedicated DS input to gate internal clocks and disable I/O drivers while retaining data at 1.0 V.
It supports independent high- and low-byte writes via BHE (I/O8–I/O15) and BLE (I/O0–I/O7), and features TTL-compatible input thresholds (VIH = 2.0 V min at 3.3 V supply) and output drive strength (IOL = 8 mA max at 3.6 V). The ERR pin-absent in this "G" variant (not "GE")-is omitted per ordering code suffix.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K words × 16 bits): Supports 32 KB of wide-data buffer storage for microcontroller co-processing or FPGA configuration caching. |
| Access Time (tAA) | 10 ns at 2.2–3.6 V: Enables direct interface with 100 MHz bus systems without wait states in high-speed industrial PLCs. |
| Deep-Sleep Current (IDS) | 15 µA max: Allows >1-year battery-backed data retention in remote sensor nodes powered by coin cells. |
| VCC Operating Range | 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V: Permits drop-in replacement across legacy 5 V, modern 3.3 V, and ultra-low-voltage 1.8 V designs. |
| ECC Functionality | Single-bit error detection and correction per 16-bit word: Mitigates soft errors in radiation-prone environments (e.g., factory automation near welding equipment). |
| Data Retention Voltage | 1.0 V minimum: Guarantees memory state hold during brown-out events where VCC dips below 1.65 V but remains ≥1.0 V. |
| Input/Output Compatibility | TTL-compatible I/O: Eliminates level-shifter requirements when interfacing with legacy 5 V microcontrollers or FPGAs. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI footprint (no ERR pin). Ball pitch: 0.5 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decoding; A17 enables 512 KB addressing space for future expansion. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; split into upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes for selective write operations. |
| CE | Chip Enable | Active-low global enable; must be LOW for read/write cycles; HIGH places device in standby (ISB2 = 6 mA typical). |
| WE | Write Enable | Active-low write strobe; sampled with CE and OE to initiate write; controls ECC encoding latch timing. |
| OE | Output Enable | Active-low read strobe; enables I/O drivers only when CE is also LOW; disables outputs in Hi-Z during standby. |
| BHE / BLE | Byte Enable Controls | BHE enables I/O8–I/O15; BLE enables I/O0–I/O7; both LOW required for full 16-bit writes; independent control reduces bus contention. |
| DS | Deep-Sleep Input | Active-low entry to ultra-low-power mode; forces internal clock stop and I/O isolation; exit requires DS HIGH + tDS (100 ns min) before valid access. |
| VCC / VSS | Power / Ground | Dual VCC pins (Balls A7, C7) and dual VSS pins (Balls B6, C6) reduce IR drop and improve noise immunity in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| PowerSnooze™ Deep-Sleep Mode | 15 µA max current draw with full 1.0 V data retention - enables multi-year operation on primary lithium batteries in unattended edge devices. |
| Embedded Single-Bit ECC | On-the-fly error detection and correction per 16-bit word without CPU intervention - critical for deterministic response in safety-monitored control loops. |
| Triple-Voltage Operation | Native support for 1.8 V, 3.3 V, and 5 V systems - eliminates external regulators or level shifters in mixed-voltage board designs. |
| Byte-Write Selectivity | Independent BHE/BLE control allows partial writes without read-modify-write cycles - reduces bus traffic and improves real-time determinism. |
| TTL-Compatible I/O | VIH = 2.0 V min (at 3.3 V), VOL = 0.4 V max (IOL = 8 mA) - ensures interoperability with legacy 5 V logic families without pull-up resistors or translators. |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Cache |
|---|---|
|
Use Scenario: Stores real-time I/O scan data between controller cycles in DIN-rail mounted programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer with ECC protection and Deep-Sleep capability for firmware update staging and power-fail data preservation. Use Value: 10 ns access ensures zero-cycle penalty during 10 kHz scan rates; 15 µA Deep-Sleep extends backup capacitor hold-up time from 20 ms to >2 s. |
Use Scenario: Holds uncompressed grayscale frame buffers (e.g., 1024×768 @ 16 bpp) in portable ultrasound or X-ray digitizers requiring rapid image capture and transfer. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory for burst-mode pixel streaming from ADCs to FPGA-based image processors. Use Value: 16-bit bus width matches common imaging pipeline widths; TTL compatibility avoids signal integrity issues at 50+ MHz pixel clocks. |
| Automotive ADAS Sensor Hub | Ruggedized IoT Gateway |
|
Use Scenario: Buffers radar pre-processing results in automotive surround-view ECUs exposed to –40 °C to +105 °C ambient (derated industrial grade). IC Role / Device Role / Timing Role: ECC-protected scratchpad memory for intermediate FFT and CFAR computation outputs prior to CAN FD transmission. Use Value: Single-bit ECC prevents corrupted object detection triggers; triple-voltage range accommodates 12 V system transients down to 4.5 V without reset. |
Use Scenario: Stores encrypted firmware partitions and runtime configuration in cellular-connected smart meters deployed in utility substations with frequent grid fluctuations. IC Role / Device Role / Timing Role: Nonvolatile shadow memory for secure boot validation and brown-out recovery state retention. Use Value: 1.0 V data retention allows safe shutdown during 100 ms dips; 48-ball VFBGA enables compact 2-layer PCB layout in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No embedded ECC; 10 ns access; 3.3 V only; 256K × 16-bit; 48-ball TFBGA | Lacks single-bit error correction - requires external software ECC or redundant storage for mission-critical use. | Select when cost sensitivity outweighs ECC requirement and system-level error handling is already implemented. |
| ON Semiconductor NVSRAM NVTFS25616L10T3G | Nonvolatile SRAM with integrated EEPROM backup; 10 ns access; 3.3 V only; no Deep-Sleep mode | Provides automatic data save on power loss but consumes 25 mA active current - unsuitable for battery-only operation. | Select when guaranteed nonvolatility during unexpected power loss is mandatory and continuous power is available. |
Compared with IS61WV25616EDBLL-10MLI and NVTFS25616L10T3G, the CY7S1041G30-10BVXIT uniquely combines hardware ECC, ultra-low Deep-Sleep current, and triple-voltage operation - making it optimal for battery-backed industrial edge nodes where reliability, longevity, and design flexibility are jointly constrained.
Availability
CY7S1041G30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame caching, and automotive ADAS sensor hubs requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7S1041G30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, focusing on industrial, automotive, and IoT applications demanding robustness and long-term supply stability.
The CY7S1041G series belongs to Infineon's PowerSnooze™ SRAM product line, engineered specifically for applications needing deterministic low-latency access combined with ultra-low-power data retention during intermittent operation.
FAQ
Does CY7S1041G30-10BVXIT include the ERR pin?
No. The "G" suffix in CY7S1041G30-10BVXIT indicates the standard version without ERR output. Only "GE" variants (e.g., CY7S1041GE-10BVXIT) include the ERR pin for 1-bit error indication. This part uses internal ECC correction silently without external signaling.
What is the minimum VCC required to retain data in Deep-Sleep mode?
The device guarantees data retention down to 1.0 V in Deep-Sleep mode (DS = LOW), as specified in the datasheet's Data Retention Characteristics table. Below 1.0 V, data integrity is not assured - design must ensure backup supply or capacitor discharge does not fall below this threshold.
Can CY7S1041G30-10BVXIT operate at 2.5 V?
Yes. The 2.2 V–3.6 V VCC range explicitly covers 2.5 V operation. At this voltage, typical active current is 38 mA and access time remains 10 ns. Input thresholds scale accordingly (VIH ≥ 2.0 V, VIL ≤ 0.6 V), ensuring compatibility with 2.5 V logic families.
Is the 48-ball VFBGA package (BVXI) RoHS-compliant and lead-free?
Yes. The BVXI package designation confirms Pb-free (lead-free) construction per JEDEC J-STD-020 and RoHS Directive 2011/65/EU. The "X" in BVXI denotes lead-free finish; thermal profile and reflow specifications align with IPC-J-STD-020D for fine-pitch BGAs.
CY7S1041G30-10BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7S1041G30-10BVXIT FAQ
1.How can I place an order for CY7S1041G30-10BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1041G30-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1041G30-10BVXIT reliable?
The price and inventory of CY7S1041G30-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1041G30-10BVXIT is usually 5 days.
3.What payment methods are accepted for CY7S1041G30-10BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1041G30-10BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1041G30-10BVXIT?
CY7S1041G30-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1041G30-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1041G30-10BVXIT?
For technical support, including CY7S1041G30-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1041G30-10BVXIT requirements.
6.How does Aetrix verify that CY7S1041G30-10BVXIT is sourced from the original manufacturer or authorized distributors?
All CY7S1041G30-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1041G30-10BVXIT meets industry standards.
7.What is the process for return or replacement of CY7S1041G30-10BVXIT?
All CY7S1041G30-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1041G30-10BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1041G30-10BVXIT part is unused and in its original packaging.
Return procedure for CY7S1041G30-10BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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