Infineon Technologies CY7S1041G30-10VXI

Overview

CY7S1041G30-10VXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode (IDS = 15 µA), 10 ns access time, and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and is used in industrial control systems requiring reliable data retention during low-power states.

For engineers reviewing the CY7S1041G30-10VXI datasheet, CY7S1041G30-10VXI pinout, CY7S1041G30-10VXI application, or CY7S1041G30-10VXI equivalent, key selection criteria include ECC-enabled single-bit error correction, dual-byte write enable (BHE/ BLE), Deep-Sleep activation via DS pin, and compatibility with 44-pin TSOP II and 48-ball VFBGA footprints.

Technical Context

This SRAM implements a synchronous-free, fully asynchronous interface with independent byte-write control via BHE and BLE pins, enabling selective upper- or lower-byte writes without external logic. Its ECC engine detects and corrects single-bit errors in real time during read operations but does not support automatic write-back on correction.

The device supports three distinct V_CC operating ranges with corresponding speed grades: 10 ns at 2.2–3.6 V and 4.5–5.5 V, and 15 ns at 1.65–2.2 V. Deep-Sleep mode is entered when DS is driven LOW, reducing current to 15 µA while retaining data at 1.0 V - critical for battery-backed industrial memory applications.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVJXI footprint (ball map matches JEDEC MO-276AA).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM with ECC applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-10TIN, CY7S1041G30-10VXI uniquely integrates ECC, Deep-Sleep, and multi-voltage support in a single 16-bit SRAM - reducing component count, power budget, and qualification scope for industrial and transportation applications.

Availability

CY7S1041G30-10VXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device nonvolatile caching, and avionics health monitoring log applications requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY7S1041G30-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO/TS 16949 and IATF 16949 certified manufacturing.

CY7S1041G30-10VXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and transportation systems demanding high reliability, low-power retention, and hardware-level data integrity assurance.

FAQ

Does CY7S1041G30-10VXI support automatic error correction write-back?

No. The embedded ECC detects and corrects single-bit errors during read operations, but it does not perform automatic write-back of corrected data to memory. The corrected data appears on the I/O bus, and the host system must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the ERR pin on CY7S1041G30-10VXI?

The ERR pin is not present on CY7S1041G30-10VXI. It is only available on variants with "E" in the ordering code (e.g., CY7S1041GE). This part number uses the base CY7S1041G configuration, which omits the ERR output. The datasheet confirms ERR is optional and tied to the "E" suffix in the ordering information.

Can CY7S1041G30-10VXI operate at 2.5 V?

Yes. CY7S1041G30-10VXI supports the 2.2 V to 3.6 V V_CC range and is rated for 10 ns access time within that band. At 2.5 V, it meets all AC and DC specifications including ICC = 38 mA typical and ISB2 = 6 mA typical, as confirmed in the Product Portfolio table on page 2 of the datasheet.

Is the 48-ball VFBGA package of CY7S1041G30-10VXI JEDEC-compliant?

Yes. The part uses the BVJXI package variant, which is JEDEC MO-276AA compliant. The datasheet explicitly states that BVJXI differs from BVXI only in swapped I/O[7:0] and I/O[15:8] ball positions - both are JEDEC-standard footprints. Mechanical dimensions (6 mm × 8 mm × 1.0 mm) match MO-276AA requirements.