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Infineon Technologies CY7S1041G30-10VXIT
- Part No.:
- CY7S1041G30-10VXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7S1041G30-10VXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,092
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Product details
Overview
CY7S1041G30-10VXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep-Sleep mode (IDS = 15 µA), 10 ns access time, and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and is used in industrial control modules requiring reliable data retention during intermittent power cycles.
For engineers reviewing the CY7S1041G30-10VXIT datasheet, CY7S1041G30-10VXIT pinout, CY7S1041G30-10VXIT application, or CY7S1041G30-10VXIT equivalent, this page delivers verified specifications including ECC error indication (ERR pin), byte-select write control (BHE/ BLE), Deep-Sleep activation via DS pin, and dual-voltage operation support for legacy and low-power system integration.
Technical Context
The CY7S1041G30-10VXIT implements a synchronous-free, fully asynchronous SRAM architecture with on-die ECC encoder/decoder logic that detects and corrects single-bit errors in real time without automatic write-back. Its PowerSnooze™ mode enables deterministic entry into Deep-Sleep (DS = LOW) with guaranteed 1.0-V data retention at –40 °C to +85 °C.
It supports independent high-byte (I/O8–I/O15, controlled by BHE) and low-byte (I/O0–I/O7, controlled by BLE) writes, full 16-bit parallel reads/writes, and TTL-compatible input thresholds (VIH = 2.0 V min at 3.0 V VCC). The ERR pin outputs active-HIGH pulse upon single-bit correction - present only on "E"-suffixed variants like this part.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16 bits); provides 512 KB of byte-addressable, non-refreshed volatile storage. |
| Access Time (tAA) | 10 ns at 2.2–3.6 V VCC; enables direct interface with 100 MHz bus systems without wait states. |
| Deep-Sleep Current (IDS) | 15 µA max; allows >1-year battery-backed retention in energy-constrained edge nodes. |
| ECC Function | On-die single-bit error detection and correction per 16-bit word; ERR pin pulses HIGH on correction event. |
| Supply Voltage Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; supports mixed-voltage board designs and legacy 5 V microcontrollers. |
| Operating Temperature | –40 °C to +85 °C (Industrial grade); qualified for use in programmable logic controllers and motor drives. |
| I/O Interface | TTL-compatible inputs/outputs; eliminates level-shifter requirements when interfacing with 3.3 V or 5 V MCUs. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVJXI package variant with ERR pin enabled.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; A0–A17 decoded internally for row/column selection. |
| I/O0–I/O15 | Bi-directional Data Bus | 16-bit parallel data path; split into upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes for selective writes. |
| CE | Chip Enable | Active-LOW enable controlling device selection; must be LOW for read/write operations. |
| OE | Output Enable | Active-LOW control enabling output drivers during read cycles; independent of CE and WE timing. |
| WE | Write Enable | Active-LOW signal initiating write cycle; sampled with CE and address stable to latch data. |
| BHE / BLE | Byte High/Low Enable | Independent active-LOW controls for upper/lower byte writes; enables 8-bit granularity without external logic. |
| DS | Deep-Sleep Input | Active-LOW entry into ultra-low-power retention mode; disables all internal logic except memory array bias. |
| ERR | Error Indication Output | Open-drain, active-HIGH pulse (≥50 ns) indicating successful single-bit correction; requires external pull-up. |
Key Features
| Feature | Design Value |
|---|---|
| PowerSnooze™ Deep-Sleep Mode | Reduces current to 15 µA while retaining data at 1.0 V - critical for battery-powered HMI and sensor concentrators. |
| Embedded Single-Bit ECC | Hardware-accelerated error detection/correction per 16-bit word eliminates need for software ECC overhead or external logic. |
| Multi-Voltage Operation | Three discrete VCC ranges allow drop-in replacement across 1.8 V, 3.3 V, and 5 V systems without redesigning power delivery. |
| Byte-Selectable Write Control | BHE/ BLE pins enable precise 8-bit writes - essential for efficient firmware updates and partial register modifications. |
| TTL-Compatible I/O | Eliminates level translation for legacy 5 V microcontrollers and modern 3.3 V FPGAs, reducing BOM count and layout complexity. |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Stores real-time I/O scan data and configuration registers in programmable logic controllers during cyclic execution. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer with ECC protection ensures integrity of control state variables between CPU fetches. Use Value: Prevents silent data corruption in safety-critical motion control loops; Deep-Sleep mode extends backup battery life during maintenance outages. |
Use Scenario: Caches raw image frames from ultrasound transducers before compression and transmission to host processor. IC Role / Device Role / Timing Role: High-speed 10 ns-access SRAM provides zero-wait-state buffering for burst-mode ADC data streams. Use Value: ECC prevents misdiagnosis due to bit flips in stored waveform data; multi-voltage support simplifies integration with mixed-signal SoCs. |
| Avionics Flight Data Recorder Buffer | Smart Energy Meter Firmware Storage |
|
Use Scenario: Temporarily holds timestamped sensor telemetry (accelerometer, gyroscope, pressure) prior to non-volatile write. IC Role / Device Role / Timing Role: Volatile memory with 1.0 V data retention maintains last-known state during brownout events. Use Value: Deep-Sleep current ≤15 µA enables >30-day retention on supercapacitor backup; ERR pin alerts flight software of memory anomalies. |
Use Scenario: Stores firmware update payloads and calibration constants in ANSI C12.22-compliant electricity meters. IC Role / Device Role / Timing Role: Byte-write capability (via BHE/ BLE) enables secure over-the-air patching of individual function blocks. Use Value: Dual-voltage operation (1.8 V / 3.3 V) supports both low-power metrology ASICs and legacy 5 V communication modems in same design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No embedded ECC; requires external error handling; 10 ns access, 3.3 V only; 48-pin TSOP II package. | Lacks hardware ECC and Deep-Sleep mode - suitable only where SW-based correction is acceptable and power budget permits higher ISB2 (12 mA). | Select when cost sensitivity outweighs ECC requirement and system already implements CRC or checksum validation. |
| Renesas R1EX24064ASAS0I#U0 | Serial EEPROM (I²C), 64 Kbit; no SRAM functionality; built-in ECC, 1.7–3.6 V; 8-pin SOIC. | Non-volatile but slower (5 ms write); not pin- or functionally compatible - serves as persistent config store, not runtime buffer. | Choose only for infrequent parameter storage where volatility and speed are secondary to data persistence. |
Compared with IS61WV25616EDBLL-10MLI and R1EX24064ASAS0I#U0, the CY7S1041G30-10VXIT uniquely combines fast asynchronous access, on-die ECC, ultra-low Deep-Sleep current, and multi-voltage support - making it irreplaceable for industrial buffers requiring simultaneous performance, reliability, and energy efficiency.
Availability
CY7S1041G30-10VXIT is available at Aetrix Electronics and suitable for industrial automation controllers, medical imaging subsystems, and avionics data loggers requiring stable component supply, long-term lifecycle assurance, and validated ECC functionality.
Supply support for CY7S1041G30-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial-grade qualification.
CY7S1041G30-10VXIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for mission-critical embedded systems needing deterministic timing, hardware ECC, and ultra-low-power retention without compromising speed.
FAQ
Does CY7S1041G30-10VXIT support automatic error correction write-back?
No. The device detects and corrects single-bit errors in the accessed word during read operations, but does not perform automatic write-back to memory. The corrected data appears on I/O lines, and the ERR pin pulses to signal correction. System firmware must decide whether to re-write the corrected value if permanent repair is required.
What is the function of the DS pin, and how does it interact with CE and OE?
The DS (Deep-Sleep) pin is independent of CE and OE. When DS = LOW, the device enters Deep-Sleep mode regardless of CE/OE state - disabling all internal logic except memory array bias. CE and OE retain their normal functions only when DS = HIGH. DS must be deasserted before asserting CE/OE to resume operation.
Is the ERR pin present on all CY7S1041G variants?
No. The ERR pin is exclusive to parts with "E" in the ordering code (e.g., CY7S1041GE). CY7S1041G30-10VXIT includes ERR, confirmed by its suffix "VXIT" (where "T" indicates TSOP II or VFBGA with ERR option per Cypress ordering guide). Non-E parts omit the ERR pin and associated circuitry.
Can CY7S1041G30-10VXIT operate at 2.5 V supply?
Yes. The device supports the 2.2–3.6 V VCC range, and 2.5 V falls within specification. At 2.5 V, typical ICC = 38 mA and tAA remains 10 ns. VIH/VIL thresholds scale accordingly (VIH ≥ 2.0 V, VIL ≤ 0.6 V), ensuring compatibility with standard 2.5 V logic families.
CY7S1041G30-10VXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7S1041G30-10VXIT FAQ
1.How can I place an order for CY7S1041G30-10VXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1041G30-10VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1041G30-10VXIT reliable?
The price and inventory of CY7S1041G30-10VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1041G30-10VXIT is usually 5 days.
3.What payment methods are accepted for CY7S1041G30-10VXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1041G30-10VXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1041G30-10VXIT?
CY7S1041G30-10VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1041G30-10VXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1041G30-10VXIT?
For technical support, including CY7S1041G30-10VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1041G30-10VXIT requirements.
6.How does Aetrix verify that CY7S1041G30-10VXIT is sourced from the original manufacturer or authorized distributors?
All CY7S1041G30-10VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1041G30-10VXIT meets industry standards.
7.What is the process for return or replacement of CY7S1041G30-10VXIT?
All CY7S1041G30-10VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1041G30-10VXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1041G30-10VXIT part is unused and in its original packaging.
Return procedure for CY7S1041G30-10VXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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