Infineon Technologies CY7S1041G30-10ZSXI

Overview

CY7S1041G30-10ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports 15 µA deep-sleep current, and operates across industrial temperature (–40°C to +85°C) in a 44-pin TSOP II package - used in mission-critical data buffers for industrial controllers and medical imaging subsystems.

For engineers reviewing the CY7S1041G30-10ZSXI datasheet, CY7S1041G30-10ZSXI pinout, CY7S1041G30-10ZSXI application, or CY7S1041G30-10ZSXI equivalent, this page provides verified functional identity, validated pin roles, confirmed ECC behavior, real-world standby/deep-sleep current values, and package-specific timing constraints - all directly traceable to Infineon's official documentation.

Technical Context

The CY7S1041G30-10ZSXI implements a synchronous-free, fully asynchronous SRAM architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read access without automatic write-back. Its PowerSnooze™ mode activates via the DS pin and reduces current to 15 µA while retaining data at 1.0 V.

It features dual byte-enable control (BHE/BLE) for independent upper/lower 8-bit writes, TTL-compatible input thresholds (VIH = 2.0 V min at 2.2–2.7 V VCC), and three selectable VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); this part is specified for the 2.2–3.6 V range with 10 ns tAA and 38 mA typical ICC.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), JEDEC MO-141AC compliant, body size 10.16 mm × 18.42 mm, 0.8 mm lead pitch, plastic body with gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability asynchronous SRAM applications.

Compared with AS7C34098B-10TIN and IS61WV25616EDBLL-10MLI, CY7S1041G30-10ZSXI uniquely integrates ECC and PowerSnooze™ in a 44-pin TSOP II package - delivering verified single-bit error resilience and industry-leading 15 µA retention current without footprint or voltage-range compromise.

Availability

CY7S1041G30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and avionics display memory requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7S1041G30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO 9001 and IATF 16949 certification.

CY7S1041G30-10ZSXI belongs to Infineon's PowerSnooze™ SRAM product line, engineered for high-reliability embedded systems where deterministic timing, ultra-low power retention, and hardware ECC are mandatory - not optional.

FAQ

Does CY7S1041G30-10ZSXI support automatic error correction write-back?

No. The embedded ECC detects and corrects single-bit errors during read operations only. Corrected data remains in the sense amplifier but is not automatically written back to the memory array. Host firmware must initiate a write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the /DS pin, and how does it differ from /CE standby?

The /DS (Deep-Sleep) pin places the device into a 15 µA retention state where only the memory array and minimal retention circuitry remain powered. In contrast, /CE high enables standby mode (ISB2 = 6 mA), where core logic remains active and wake-up is immediate. /DS requires deassertion (HIGH) to exit retention, adding ~100 ns wake-up latency versus /CE-based wake-up.

Is the ERR pin present on CY7S1041G30-10ZSXI?

No. The ERR pin is only available on parts with "E" in the ordering code (e.g., CY7S1041GE). CY7S1041G30-10ZSXI lacks the ERR output; error indication is not externally signaled. This is confirmed in the Logic Block Diagram (Page 3) and Ordering Information section of the datasheet.

Can CY7S1041G30-10ZSXI operate at 1.8 V?

No. CY7S1041G30-10ZSXI is the 2.2–3.6 V speed grade (indicated by "30" in the part number). It is not characterized or guaranteed for operation at 1.8 V. For 1.65–2.2 V operation, the CY7S1041G18 variant must be used - mixing voltage grades risks timing violation or functional failure.