My Inquiry
My Account
Infineon Technologies CY7S1041G30-10ZSXIT
- Part No.:
- CY7S1041G30-10ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7S1041G30-10ZSXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,128
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7S1041G30-10ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep-Sleep mode (IDS = 15 µA), 10 ns access time, and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and is used in industrial control systems requiring reliable data retention during intermittent power states.
For engineers reviewing the CY7S1041G30-10ZSXIT datasheet, CY7S1041G30-10ZSXIT pinout, CY7S1041G30-10ZSXIT application, or CY7S1041G30-10ZSXIT equivalent, key selection criteria include ECC-enabled single-bit error correction, Deep-Sleep current specification, byte-enable-controlled 16-bit I/O architecture, and compatibility with TSOP II and VFBGA packaging for space-constrained embedded designs.
Technical Context
The CY7S1041G30-10ZSXIT implements a synchronous-free, fully asynchronous SRAM core with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read access without automatic write-back. Its PowerSnooze™ architecture separates Deep-Sleep (DS pin–controlled, 15 µA retention) from standard standby (ISB2 = 6 mA typical).
It supports independent high-byte (BHE) and low-byte (BLE) writes via TTL-compatible inputs, operates across three disjoint VCC ranges with distinct timing and current profiles, and features an ERR output (not present on non-"E" variants) to flag corrected errors - this specific part number omits ERR per ZSXIT suffix and BVJXI package mapping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K words × 16 bits); provides 512 KB of byte-addressable, non-refreshed volatile storage. |
| Access time (tAA) | 10 ns at 2.2–3.6 V; enables direct interface with 100 MHz microcontrollers without wait states. |
| Deep-Sleep current (IDS) | 15 µA max at VCC ≤ 5.5 V; sustains data retention for battery-backed industrial logging during extended idle periods. |
| VCC operating range | 2.2 V to 3.6 V (primary rating for this variant); ensures compatibility with 3.3 V system rails and mixed-voltage FPGA interfaces. |
| ECC capability | Single-bit error detection and correction per 16-bit word; improves system reliability in radiation-prone or long-life embedded deployments. |
| Package | 44-pin TSOP II (ZSXIT suffix); surface-mount, JEDEC-standard footprint with 0.8 mm pitch, suitable for reflow assembly. |
| Input/output interface | TTL-compatible; eliminates level-shifting requirements when interfacing with legacy 3.3 V or 5 V logic families. |
Pinout & Package
Package: 44-pin Thin Small Outline Package Type II (TSOP II), 400-mil width, lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; A0–A17 directly map to memory location without multiplexing. |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; supports simultaneous 16-bit reads/writes or byte-selectable operations via BHE/ BLE. |
| CE | Chip Enable | Active-low global enable; device enters standby when CE is HIGH, overriding WE/OE state. |
| WE | Write Enable | Active-low write strobe; latches data into memory only when CE and WE are LOW and OE is HIGH. |
| OE | Output Enable | Active-low read strobe; places I/O pins in high-impedance state when HIGH, enabling bus sharing. |
| BHE / BLE | Byte High/Low Enable | Independent 8-bit write controls: BHE enables I/O8–I/O15; BLE enables I/O0–I/O7 - essential for mixed-endian or partial-word updates. |
| DS | Deep-Sleep input | Active-low entry to 15 µA retention mode; suspends all internal activity while preserving stored data without external refresh. |
| VCC / VSS | Power supply / Ground | Dual VCC pins (pins 11 & 34) and dual VSS pins (12 & 33) reduce IR drop and improve noise immunity in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| PowerSnooze™ Deep-Sleep mode | 15 µA max retention current enables >1-year battery life in coin-cell–powered data loggers without compromising memory density. |
| Embedded ECC logic | On-die Hamming-code encoder/decoder corrects single-bit errors in real time without CPU intervention or software overhead. |
| Triple-voltage support | Native operation at 1.8 V, 3.3 V, and 5 V rails eliminates external regulators in multi-rail industrial backplanes. |
| Byte-selectable I/O architecture | BHE/ BLE pins allow precise 8-bit updates - critical for protocol stacks handling 16-bit registers with byte-aligned fields. |
| TTL-compatible signaling | Direct connection to legacy microcontrollers (e.g., Intel 80C188, TI C2000) without level translators or pull-up networks. |
Applications
| Industrial PLC Data Buffering | Medical Device Event Logging |
|---|---|
|
Use Scenario: Storing real-time sensor samples and alarm timestamps in programmable logic controllers with intermittent mains power. IC Role / Device Role / Timing Role: Volatile high-speed buffer between ADC subsystem and flash-based nonvolatile archive; ECC prevents corrupted event records due to EMI-induced bit flips. Use Value: 10 ns access enables sub-100 ns sampling loop overhead; 15 µA Deep-Sleep extends backup battery life beyond 18 months in maintenance-free installations. |
Use Scenario: Capturing diagnostic waveforms and fault codes in portable ultrasound units during battery-powered operation. IC Role / Device Role / Timing Role: Primary working memory for DSP preprocessing pipeline; retains waveform segments during sleep transitions between imaging bursts. Use Value: Dual VCC support allows seamless integration with both 3.3 V analog front-end and 5 V display controller; ECC ensures clinical data integrity compliance. |
| Ruggedized Transportation Telematics | Avionics Health Monitoring |
|
Use Scenario: Recording GPS position, CAN bus diagnostics, and engine parameters in railway signaling boxes exposed to wide thermal cycling. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM for mission-critical black-box recording; operates reliably from –40 °C to +85 °C without derating. Use Value: 256K × 16 organization matches CAN FD message buffering requirements; 1.0 V data retention permits safe brown-out recovery below nominal VCC. |
Use Scenario: Storing flight-control actuator calibration tables and sensor self-test results in airborne flight management units. IC Role / Device Role / Timing Role: Safety-critical scratchpad memory where uncorrected memory errors could violate DO-254 DAL-B requirements. Use Value: On-chip ECC eliminates need for external error-checking logic; TSOP II package meets IPC-A-610 Class 3 solder joint reliability standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No embedded ECC; 10 ns access, 2.5 V–3.6 V only; 25 µA deep-sleep; 48-pin TSOPII package. | Lacks hardware error correction - requires software ECC or external checking logic for safety-critical use. | Select when cost sensitivity outweighs ECC requirement and system-level error handling is already implemented. |
| ON Semiconductor NVSRAM NB1024MB16A-10Z | Nonvolatile SRAM with auto-store; 10 ns access; 3 V only; 100 µA standby; no Deep-Sleep mode. | Retains data without battery or capacitor backup but consumes higher active/standby current and lacks low-power retention state. | Prefer when guaranteed nonvolatility during total power loss is mandatory, and 15 µA Deep-Sleep is not required. |
Compared with IS61WV25616EDBLL-10MLI and NB1024MB16A-10Z, the CY7S1041G30-10ZSXIT uniquely delivers hardware ECC + ultra-low 15 µA Deep-Sleep in a single 3.3 V–optimized package - making it optimal for battery-constrained, high-integrity industrial logging where both data fidelity and energy efficiency are non-negotiable.
Availability
CY7S1041G30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device event logging, and ruggedized transportation telematics requiring stable component supply across extended product lifecycles.
Supply support for CY7S1041G30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and aerospace applications demanding ECC protection, multi-voltage flexibility, and ultra-low-power retention modes - not general-purpose computing memory.
FAQ
Does CY7S1041G30-10ZSXIT support automatic error correction write-back?
No. The embedded ECC logic detects and corrects single-bit errors during read operations, but does not perform automatic write-back of corrected data to the memory array. The corrected value appears on the I/O bus, and any persistent update requires explicit write cycle by the host controller.
What is the function of the DS pin, and how does it differ from CE-driven standby?
The DS (Deep-Sleep) pin places the device into a 15 µA data retention state where all internal clocks and decoders are disabled, preserving contents at minimal power. CE-driven standby (ISB2 = 6 mA) maintains address decoder readiness and supports faster wake-up but draws significantly more current than DS mode.
Is the ERR pin present on CY7S1041G30-10ZSXIT?
No. The "E" suffix in CY7S1041GE denotes ERR pin inclusion; CY7S1041G30-10ZSXIT uses the base "G" ordering code and BVJXI package, which omits the ERR output. Error indication must be handled externally or inferred from read-data parity if implemented at system level.
Can CY7S1041G30-10ZSXIT operate at 1.8 V?
No. This variant is rated for 2.2 V to 3.6 V only. The "30" in the part number designates the 3.0 V speed grade (10 ns), and its DC characteristics are specified exclusively within the 2.2–3.6 V range. Operation at 1.8 V falls under the separate CY7S1041G(E)18 industrial grade.
CY7S1041G30-10ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7S1041G30-10ZSXIT FAQ
1.How can I place an order for CY7S1041G30-10ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1041G30-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1041G30-10ZSXIT reliable?
The price and inventory of CY7S1041G30-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1041G30-10ZSXIT is usually 5 days.
3.What payment methods are accepted for CY7S1041G30-10ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1041G30-10ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1041G30-10ZSXIT?
CY7S1041G30-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1041G30-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1041G30-10ZSXIT?
For technical support, including CY7S1041G30-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1041G30-10ZSXIT requirements.
6.How does Aetrix verify that CY7S1041G30-10ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY7S1041G30-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1041G30-10ZSXIT meets industry standards.
7.What is the process for return or replacement of CY7S1041G30-10ZSXIT?
All CY7S1041G30-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1041G30-10ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1041G30-10ZSXIT part is unused and in its original packaging.
Return procedure for CY7S1041G30-10ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7S1041G30-10ZSXIT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…
Electronic devices and circuits guide covering passive components, semiconductors, analog and digital circuits, circuit theory, practical calculations, troubleshooting, datasheet selection, and learnin…
