Infineon Technologies CY7S1041GE30-10BVXI

Overview

CY7S1041GE30-10BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep-Sleep mode (IDS = 15 µA), and 10 ns access time at 2.2–3.6 V operation. It features TTL-compatible I/O, ERR output for single-bit error detection/correction, and operates across industrial temperature (–40°C to +85°C). Used in mission-critical embedded controllers requiring data integrity and low-power retention.

For engineers reviewing the CY7S1041GE30-10BVXI datasheet, CY7S1041GE30-10BVXI pinout, CY7S1041GE30-10BVXI application, or CY7S1041GE30-10BVXI equivalent, key selection criteria include ECC support, Deep-Sleep current spec, byte-enable write control (BHE/ BLE), VFBGA-48 package compatibility, and ERR pin availability - all confirmed for this BVXI-grade variant.

Technical Context

The CY7S1041GE30-10BVXI implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors in accessed memory locations without automatic write-back. Its PowerSnooze™ architecture separates Deep-Sleep (DS pin–controlled, 15 µA) from standard standby (ISB2 = 6 mA), enabling deterministic low-power retention at 1.0 V.

It supports three V_CC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); this part is rated for 10 ns t_AA at 2.2–3.6 V. Byte write control via BHE (I/O8–I/O15) and BLE (I/O0–I/O7) enables partial-word updates, while ERR is an active-HIGH open-drain output indicating corrected single-bit errors.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI footprint (ball map matches Figure 5 in datasheet Rev. *G).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and NCS25616-10T3I, the CY7S1041GE30-10BVXI uniquely delivers concurrent low-power retention, hardware ECC, and 10 ns performance - making it optimal for applications where both data integrity and responsiveness are non-negotiable.

Availability

CY7S1041GE30-10BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical patient monitors, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7S1041GE30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader focused on power systems, automotive, industrial, and IoT applications, with headquarters in Munich, Germany.

This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-integrity embedded systems demanding simultaneous speed, ultra-low-power retention, and on-die error resilience.

FAQ

Does CY7S1041GE30-10BVXI support automatic error correction write-back?

No. The device detects and corrects single-bit errors in the accessed word during read operations, but does not perform automatic write-back to memory. Correction occurs internally in the sense amplifier/ECC path, and corrected data is output on I/O lines; the original corrupted bit remains unmodified in the array unless explicitly rewritten by the host.

What is the function of the ERR pin, and how is it electrically configured?

The ERR pin is an open-drain, active-HIGH output that pulses HIGH for one cycle whenever a single-bit error is detected and corrected during a read access. It requires an external pull-up resistor (typically 4.7 kΩ to V_CC) and can drive a microcontroller interrupt input directly. It is not asserted for uncorrectable multi-bit errors.

Can CY7S1041GE30-10BVXI operate across multiple voltage ranges simultaneously?

No. The device must be powered within one of three specified V_CC ranges: 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V. It is not designed for dual-supply or mixed-voltage operation. This part is rated for the 2.2–3.6 V range and achieves 10 ns access time only within that band.

How does the Deep-Sleep mode interact with data retention voltage?

In Deep-Sleep mode (DS = LOW), the device retains data down to 1.0 V on V_CC, verified across the full industrial temperature range. Retention time exceeds 10 years at 25°C and 1.0 V; at 85°C and 1.0 V, minimum retention is 24 hours per datasheet specification. No external capacitor or backup source is required.