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Infineon Technologies CY7S1041GE30-10BVXIT
- Part No.:
- CY7S1041GE30-10BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7S1041GE30-10BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
CY7S1041GE30-10BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 10 ns access time at 2.2–3.6 V, and draws only 15 µA in Deep-Sleep mode. It is used in industrial control systems requiring high-reliability data retention during low-power states.
For engineers reviewing the CY7S1041GE30-10BVXIT datasheet, CY7S1041GE30-10BVXIT pinout, CY7S1041GE30-10BVXIT application, or CY7S1041GE30-10BVXIT equivalent, key selection criteria include ECC-enabled single-bit error correction, dual-byte write enable (BHE/ BLE), ERR output indication, and support for 48-ball VFBGA (BVXI package) with JEDEC-compliant ball mapping.
Technical Context
The CY7S1041GE30-10BVXIT implements a synchronous-free, fully asynchronous SRAM architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read access without automatic write-back. Its PowerSnooze™ mode is controlled by the DS pin, enabling data retention at 1.0 V with 15 µA current draw while disabling all internal logic except memory array retention circuitry.
It supports byte-level writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and features TTL-compatible input thresholds (VIH = 2.0 V min at 2.2–3.6 V) and CMOS-compatible output drive strength. The ERR pin asserts active-low upon detection and correction of a single-bit error in the accessed word - a feature exclusive to "E"-suffix variants like this part.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K words × 16 bits); provides 512 KB of byte-addressable storage for real-time buffering in deterministic systems. |
| Access time (tAA) | 10 ns at 2.2–3.6 V; enables direct interface with 100 MHz microcontrollers without wait states. |
| Deep-Sleep current (IDS) | 15 µA max; allows >1-year battery-backed operation in industrial logging nodes with periodic wake-up. |
| ECC capability | Single-bit error detection and correction per 16-bit word; improves system MTBF in radiation-prone or high-temperature environments. |
| Supply voltage range | 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V; supports legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V system rails. |
| ERR pin function | Active-low open-drain output signaling corrected single-bit errors; enables firmware-triggered diagnostic logging or redundancy handover. |
| Data retention voltage | 1.0 V minimum; ensures non-volatile hold during brown-out or backup power switchover without external capacitor hold-up. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI footprint (ball pitch: 0.5 mm). Pinout validated per Figure 5 (CY7S1041GE, BVXI package) in datasheet 001-92576 Rev. *G.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; A17 is MSB for 16-bit word alignment. |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; split into upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes for selective writes. |
| CE | Chip Enable | Active-low global enable; must be LOW for read/write access; HIGH places device in standby (ISB2 = 6 mA typical). |
| WE | Write Enable | Active-low write strobe; sampled with CE and OE to initiate write cycle; controls data latching into memory array. |
| OE | Output Enable | Active-low read strobe; enables output drivers only when CE is also LOW; isolates bus during inactive cycles. |
| BHE / BLE | Byte High/Low Enable | Independent active-low controls for upper/lower byte writes; enables 8-bit granularity without external logic. |
| DS | Deep-Sleep input | Active-low entry to ultra-low-power retention mode; disables all logic except memory core; requires VCC ≥ 1.0 V. |
| ERR | Error indication output | Open-drain active-low signal pulsed after ECC correction; asserted once per corrected access; requires external pull-up. |
| VCC / VSS | Power supply / Ground | Dual VCC pins (balls C2, D1) and multiple VSS balls (A1, B1, E1, F1, G1, H1) ensure low-impedance decoupling for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Hardware-accelerated single-bit error detection and correction per 16-bit word, eliminating need for software ECC overhead or external controllers. |
| PowerSnooze™ Deep-Sleep mode | 15 µA max current draw with 1.0 V data retention voltage, enabling multi-year operation on coin-cell batteries in remote sensors. |
| TTL-compatible I/O | VIH = 2.0 V min (2.2–3.6 V range) and VOL = 0.4 V max allow direct interfacing with legacy 3.3 V or 5 V microcontrollers without level shifters. |
| Dual-byte write control (BHE/ BLE) | Independent enable signals for upper and lower bytes eliminate need for external byte-masking logic in 8-bit peripheral interfaces. |
| ERR output pin | Dedicated open-drain error flag enables real-time fault logging, watchdog triggering, or redundant memory bank switching in safety-critical systems. |
Applications
| Industrial PLC Data Buffering | Railway Signaling Memory Backup |
|---|---|
|
Use Scenario: Real-time I/O scan buffers in programmable logic controllers require deterministic access and immunity to bit flips caused by EMI or temperature cycling. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer with ECC protection and 10 ns access, placed between FPGA logic and field I/O modules. Use Value: Prevents silent data corruption in safety-critical control loops; Deep-Sleep mode preserves configuration during main power loss without supercapacitor support. |
Use Scenario: Onboard train control units retain critical route data and interlocking state during brief power interruptions on electrified rail lines. IC Role / Device Role / Timing Role: Nonvolatile shadow memory holding last-valid safe state, powered from backup battery during 100-ms grid dropout events. Use Value: 1.0 V data retention and 15 µA Deep-Sleep current extend battery life beyond EN 50126 requirements for 10+ years without maintenance. |
| Medical Imaging Frame Storage | Avionics Sensor Fusion Cache |
|
Use Scenario: Portable ultrasound devices capture high-resolution B-mode frames at 30 fps and require zero-latency local storage before compression and transmission. IC Role / Device Role / Timing Role: Low-access-time (10 ns), low-noise SRAM acting as frame buffer between ADC pipeline and ARM Cortex-A processor. Use Value: ECC prevents corrupted pixel data from propagating into diagnostic algorithms; TTL compatibility avoids timing skew with legacy imaging ASICs. |
Use Scenario: Flight management computers fuse inertial, GPS, and barometric sensor streams in real time, requiring reliable intermediate result caching. IC Role / Device Role / Timing Role: Deterministic-access SRAM with error resilience, placed between sensor hub MCU and safety-certified flight processor. Use Value: ERR pin integration enables DO-254-compliant error reporting; wide voltage range (1.65–5.5 V) simplifies power architecture across avionics subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No embedded ECC; 10 ns access; 3.3 V only; 48-pin TSOP II package; 25 µA standby (no Deep-Sleep mode). | Lacks error correction and ultra-low-power retention; suitable only where radiation/EMI risk is negligible and system-level ECC is implemented externally. | Select when cost sensitivity outweighs reliability requirements and board space permits larger TSOP II footprint. |
| Micron MT45W8MW16BGX-107 IT:B | DDR2 SDRAM (not asynchronous); 107 MHz clocked interface; no ECC; 1.8 V only; 60-ball VFBGA; requires refresh controller. | Fundamentally different architecture - synchronous, volatile, refresh-dependent - incompatible with direct replacement in legacy SRAM designs. | Not a functional substitute; consider only for new designs targeting higher density and bandwidth with full DDR2 infrastructure. |
Compared with IS61WV25616EDBLL-10MLI, CY7S1041GE30-10BVXIT adds hardware ECC and 15 µA Deep-Sleep retention but costs more and requires ERR pin handling; versus MT45W8MW16BGX-107 IT:B, it offers true asynchronous operation, no refresh, and deterministic latency - critical for hard real-time systems.
Availability
CY7S1041GE30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, railway signaling memory backup, medical imaging frame storage, and avionics sensor fusion cache requiring stable component supply across extended product lifecycles.
Supply support for CY7S1041GE30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.
This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and transportation systems demanding high reliability, low-power retention, and hardware-based error resilience in harsh environments.
FAQ
Does CY7S1041GE30-10BVXIT support automatic error correction write-back?
No. The device detects and corrects single-bit errors on read access but does not perform automatic write-back to the memory array. Corrected data appears on I/O lines, and the ERR pin signals the event; firmware must decide whether to re-write the corrected word if persistent storage is required. This behavior is explicitly documented in Note 1 of the datasheet.
What is the function of the DS pin, and how does it differ from CE or OE?
The DS (Deep-Sleep) pin is an active-low control that places the entire device-including address decoder, sense amplifiers, and I/O buffers-into ultra-low-power retention mode drawing ≤15 µA. Unlike CE (which enables/disables chip operation) or OE (which gates output drivers), DS overrides all other controls and reduces power far below standby (ISB2 = 6 mA), preserving data at 1.0 V without clock or refresh.
Is the ERR pin present on all CY7S1041G(E) variants?
No. The ERR pin is exclusive to parts with "E" in the ordering code (e.g., CY7S1041GE), indicating the error-indication option. Standard CY7S1041G parts omit this pin. The CY7S1041GE30-10BVXIT suffix confirms the "E" variant, and its ERR pin is located at ball H2 in the BVXI package per Figure 5 of datasheet 001-92576 Rev. *G.
Can CY7S1041GE30-10BVXIT operate across all three voltage ranges simultaneously?
No. The device must be powered within one of the three specified VCC ranges: 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V. It is not multi-rail capable. The 10 ns access time applies only in the 2.2–3.6 V and 4.5–5.5 V ranges; in the 1.65–2.2 V range, access time is 15 ns. Voltage selection is fixed at design time and affects timing, drive strength, and power consumption.
CY7S1041GE30-10BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7S1041GE30-10BVXIT FAQ
1.How can I place an order for CY7S1041GE30-10BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1041GE30-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1041GE30-10BVXIT reliable?
The price and inventory of CY7S1041GE30-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1041GE30-10BVXIT is usually 5 days.
3.What payment methods are accepted for CY7S1041GE30-10BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1041GE30-10BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1041GE30-10BVXIT?
CY7S1041GE30-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1041GE30-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1041GE30-10BVXIT?
For technical support, including CY7S1041GE30-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1041GE30-10BVXIT requirements.
6.How does Aetrix verify that CY7S1041GE30-10BVXIT is sourced from the original manufacturer or authorized distributors?
All CY7S1041GE30-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1041GE30-10BVXIT meets industry standards.
7.What is the process for return or replacement of CY7S1041GE30-10BVXIT?
All CY7S1041GE30-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1041GE30-10BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1041GE30-10BVXIT part is unused and in its original packaging.
Return procedure for CY7S1041GE30-10BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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