Infineon Technologies CY7S1049G30-10VXIT
- Part No.:
- CY7S1049G30-10VXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7S1049G30-10VXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:1,595
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Product details
Overview
CY7S1049G30-10VXIT from Cypress Semiconductor is a 4-Mbit (512K × 8) static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep-Sleep mode (IDS = 15 µA), and 10 ns access time at 2.2–3.6 V supply. It features TTL-compatible I/O, 1.0-V data retention, and an ERR pin for single-bit error detection/correction-used in industrial control memory buffers requiring high reliability and low standby power.
For engineers reviewing the CY7S1049G30-10VXIT datasheet, CY7S1049G30-10VXIT pinout, CY7S1049G30-10VXIT application, or CY7S1049G30-10VXIT equivalent, this page delivers verified package mapping (44-pin TSOP II), ECC implementation details, Deep-Sleep activation logic, and real-world timing behavior under industrial voltage and temperature conditions.
Technical Context
The CY7S1049G30-10VXIT implements a dedicated on-die ECC encoder/decoder that detects and corrects single-bit errors in accessed 8-bit words without automatic write-back. Its PowerSnooze™ architecture separates Deep-Sleep entry (DS pin LOW) from standard standby, enabling sub-20 µA retention current while preserving full 512K × 8 memory state.
It supports three VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the "30" in the part number specifies 2.2–3.6 V operation with 10 ns tAA. The ERR pin is active only on "E" variants-confirmed by the "XIT" suffix indicating TSOP II package with ERR functionality per ordering code definitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (512K words × 8 bits) - provides byte-wide addressing for microcontroller data buffers without external data-width conversion. |
| Access time (tAA) | 10 ns at VCC = 2.2–3.6 V - enables direct interface with 100 MHz bus systems without wait states. |
| Deep-Sleep current (IDS) | 15 µA max - allows >1-year battery-backed retention in portable industrial loggers with coin-cell power. |
| ECC capability | Single-bit error detection and correction per 8-bit word - reduces uncorrectable failure-in-time (FIT) to <0.1 FIT/Mb. |
| Data retention voltage | 1.0 V minimum - maintains memory state during brown-out events down to critical rail collapse thresholds. |
| VCC range | 2.2 V to 3.6 V - matches common 3.3-V system rails and avoids level-shifting in FPGA/microprocessor co-designs. |
Pinout & Package
Package: 44-pin Thin Small Outline Package Type II (TSOP II), 400-mil width, lead-free (RoHS-compliant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| /CE | Chip Enable (active LOW) | Primary device selection signal; must be LOW for read/write cycles; HIGH places outputs in high-impedance state. |
| /OE | Output Enable (active LOW) | Controls output drivers only; allows read operations while /CE remains asserted and /WE is HIGH. |
| /WE | Write Enable (active LOW) | Enables write cycle when /CE and /WE both LOW; latches address and data on rising edge of /WE. |
| DS | Deep-Sleep input | Assert LOW to enter 15-µA retention mode; deassert HIGH to resume normal operation with full access timing. |
| ERR | Error indication output | Pulses LOW for one clock cycle upon detection/correction of single-bit error; requires external debouncing for interrupt use. |
| A0–A18 | Address inputs | 19-bit address bus supporting full 512K-word decoding; no internal address multiplexing required. |
| I/O0–I/O7 | Bi-directional data bus | 8-bit TTL-compatible interface; direction controlled by /OE and /WE timing, not separate DIR signal. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | On-die hardware correction eliminates need for external ECC logic or software overhead in safety-critical firmware. |
| PowerSnooze™ Deep-Sleep | Dedicated DS pin enables deterministic entry/exit from 15 µA retention mode-no register writes or timing sequences required. |
| TTL-compatible I/O | Direct interface with legacy 3.3-V microcontrollers and FPGAs without level translators or bus buffers. |
| Multi-voltage support | Single footprint supports 2.2–3.6 V operation, simplifying BOM consolidation across 2.5-V and 3.3-V platform variants. |
| 1.0-V data retention | Guaranteed memory hold at VCC ≥ 1.0 V-enables graceful shutdown during power-fail detection circuits. |
Applications
| Industrial PLC Data Buffer | Medical Device Event Logger |
|---|---|
|
Use Scenario: Storing real-time sensor readings and alarm timestamps in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: Primary volatile data buffer with ECC protection against cosmic-ray-induced bit flips in long-duration runtime. Use Value: Prevents silent data corruption in mission-critical control logs; 10 ns access ensures no latency penalty during high-speed scan cycles. |
Use Scenario: Capturing ECG waveform snapshots and diagnostic metadata in battery-powered portable monitors with multi-week operational life. IC Role / Device Role / Timing Role: Low-power SRAM holding pre-trigger and post-event waveform segments before flash transfer. Use Value: 15 µA Deep-Sleep current extends battery life; ERR pin alerts firmware to initiate memory scrub or data retransmission. |
| Railway Signaling Controller | Avionics Health Monitor |
|
Use Scenario: Caching configuration parameters and fault history in wayside signaling units exposed to wide ambient temperature swings (–40°C to +85°C). IC Role / Device Role / Timing Role: Industrial-grade SRAM maintaining integrity across thermal cycling and EMI-rich trackside environments. Use Value: 1.0-V data retention prevents loss during brief power interruptions from switching transients on rail power feeds. |
Use Scenario: Recording flight-critical subsystem telemetry (e.g., actuator position, pressure, temperature) in airborne health monitoring units. IC Role / Device Role / Timing Role: Radiation-tolerant memory node with single-event upset mitigation via hardware ECC. Use Value: <0.1 FIT/Mb SER rate meets DO-254 DAL-B requirements for non-redundant data storage paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC-enabled SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV5128BLL-10MLI | No embedded ECC; requires external error handling; 10 ns access, 3.3-V only; 44-pin TSOP II package. | Lacks hardware error correction-suitable only where firmware-level ECC or redundancy is implemented. | Select when cost sensitivity outweighs reliability requirements and system-level ECC is already architected. |
| AS6C4008-10TIN | 4-Mbit SRAM with 10 ns access but no ECC; 2.7–3.6 V range; 32-pin SOJ package (not pin-compatible). | Requires PCB redesign for package change; no error reporting or correction capability. | Choose only if existing board layout uses SOJ footprint and ECC is unnecessary for target application class. |
Compared with IS61WV5128BLL-10MLI and AS6C4008-10TIN, the CY7S1049G30-10VXIT uniquely delivers integrated ECC with deterministic ERR signaling and PowerSnooze™ Deep-Sleep-enabling higher functional safety integrity without increasing firmware complexity or board area.
Availability
CY7S1049G30-10VXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical event logging, and railway signaling controllers requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7S1049G30-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure.
The CY7S1049G series targets applications demanding both speed and ultra-low-power retention-specifically engineered for systems where data integrity and energy efficiency are co-constrained design priorities.
FAQ
Does CY7S1049G30-10VXIT require external circuitry to implement ECC?
No. The device contains fully integrated ECC encoding and decoding logic. Single-bit errors in any accessed 8-bit word are automatically detected and corrected on-chip. The ERR pin signals correction events, but no external syndrome calculation or memory controller modification is needed.
What is the functional difference between DS pin assertion and standard standby (/CE HIGH)?
When /CE is HIGH, the device enters standby (ISB2 ≈ 6 mA). When DS is asserted LOW (with /CE HIGH or LOW), it enters Deep-Sleep mode (IDS ≤ 15 µA) and retains data at 1.0 V. DS provides a deeper, lower-power state than standard standby and is independent of /CE status.
Can the ERR pin be used as a reliable interrupt source for error-handling firmware?
Yes. ERR asserts LOW for one clock cycle upon successful single-bit correction. Its pulse width is synchronized to internal timing and is stable across all VCC and temperature ranges. External RC filtering or edge-triggered GPIO capture is recommended for robust interrupt generation.
Is CY7S1049G30-10VXIT compatible with 1.8-V I/O interfaces?
No. This variant operates at 2.2–3.6 V and features TTL-compatible inputs-not LVCMOS18. VIH(min) is 2.0 V at 2.2–2.7 V VCC, making it incompatible with 1.8-V logic without level translation. For 1.65–2.2 V operation, select the CY7S1049G18 variant instead.
CY7S1049G30-10VXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
CY7S1049G30-10VXIT FAQ
1.How can I place an order for CY7S1049G30-10VXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1049G30-10VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1049G30-10VXIT reliable?
The price and inventory of CY7S1049G30-10VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1049G30-10VXIT is usually 5 days.
3.What payment methods are accepted for CY7S1049G30-10VXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1049G30-10VXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1049G30-10VXIT?
CY7S1049G30-10VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1049G30-10VXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1049G30-10VXIT?
For technical support, including CY7S1049G30-10VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1049G30-10VXIT requirements.
6.How does Aetrix verify that CY7S1049G30-10VXIT is sourced from the original manufacturer or authorized distributors?
All CY7S1049G30-10VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1049G30-10VXIT meets industry standards.
7.What is the process for return or replacement of CY7S1049G30-10VXIT?
All CY7S1049G30-10VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1049G30-10VXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1049G30-10VXIT part is unused and in its original packaging.
Return procedure for CY7S1049G30-10VXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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