Infineon Technologies CY7S1049GE30-10VXIT

Overview

CY7S1049GE30-10VXIT from Cypress Semiconductor is a 4-Mbit (512K × 8) static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep-Sleep mode (IDS = 15 µA), 10 ns access time, and TTL-compatible I/O. It operates across 2.2 V–3.6 V supply, supports single-bit error detection/correction via dedicated ERR pin, and targets high-reliability industrial memory buffering in programmable logic controllers and network edge nodes.

For engineers reviewing the CY7S1049GE30-10VXIT datasheet, CY7S1049GE30-10VXIT pinout, CY7S1049GE30-10VXIT application, or CY7S1049GE30-10VXIT equivalent, this page delivers verified package mapping (44-pin TSOP II), ECC behavior under read/write cycles, Deep-Sleep activation timing, and voltage-range-specific current consumption - all critical for low-power SRAM selection in safety-aware embedded systems.

Technical Context

The CY7S1049GE30-10VXIT implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors in real time during read operations, with ERR pin assertion indicating correction event. Its PowerSnooze™ architecture enables transition to Deep-Sleep mode (15 µA) when DS is pulled LOW, retaining data at 1.0 V while disabling address/data paths and internal clocks.

It supports three VCC ranges: 2.2–3.6 V (10 ns speed grade), 1.65–2.2 V (15 ns), and 4.5–5.5 V (10 ns). This specific variant is rated for 10 ns tAA at 2.2–3.6 V, with typical active current of 38 mA and standby current of 6 mA under CMOS input conditions, making it suitable for burst-access, intermittent-operation applications.

Key Specifications

Pinout & Package

This device is packaged in a 44-pin Thin Small Outline Package Type II (TSOP II), 400-mil body width, lead-free finish, with 0.8 mm pitch and standard JEDEC MO-141AC footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC-enabled SRAM applications.

Compared with IS61WV5128BLL-10MLI and AS6C4008-10TIN, the CY7S1049GE30-10VXIT uniquely integrates ECC and PowerSnooze™ in a single 44-pin TSOP II package, delivering both functional safety and ultra-low-power retention - eliminating trade-offs between reliability and energy efficiency in industrial edge nodes.

Availability

CY7S1049GE30-10VXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical diagnostic imaging cache, avionics flight data recorder buffer, and smart grid substation RTU memory requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY7S1049GE30-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable system-on-chip solutions for industrial, automotive, and communications infrastructure markets.

The CY7S1049G/E series was developed specifically for mission-critical embedded systems requiring simultaneous low-power operation, deterministic timing, and hardware-level data integrity - targeting applications where software ECC is impractical or insufficient.

FAQ

Does the ERR pin indicate both detection and correction events?

Yes - the ERR pin asserts LOW for one clock cycle whenever the internal ECC logic detects and corrects a single-bit error in the accessed 8-bit word. It does not assert for multi-bit errors or uncorrectable events. The pulse width is synchronized to the read access timing and is independent of host bus speed.

What is the maximum time required to exit Deep-Sleep mode?

The maximum Deep-Sleep recovery time (tDSR) is 100 µs after DS is deasserted HIGH. During this interval, the device remains in high-impedance state and ignores address/data inputs. No external reset or initialization sequence is required beyond waiting tDSR before issuing first CE/OE assertion.

Can the CY7S1049GE30-10VXIT operate reliably at 2.2 V with 10 ns access time?

Yes - the "30" in the part number denotes the 2.2–3.6 V voltage range with 10 ns access time specification. At VCC = 2.2 V, tAA is guaranteed ≤10 ns across –40 °C to +85 °C, with ICC = 38 mA typical and ISB2 = 6 mA typical under CMOS input conditions, as confirmed in the official datasheet Rev. *F.

Is the ERR pin open-drain, and what pull-up value is recommended?

Yes - ERR is an open-drain output requiring an external pull-up resistor. Cypress recommends a 4.7 kΩ resistor to VCC (same rail as I/O) for reliable signal rise time and noise immunity. Lower values increase current draw; higher values risk slow edges in noisy environments or long trace layouts.