Infineon Technologies CY7S1061G18-15ZSXI

Overview

CY7S1061G18-15ZSXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) industrial-grade CMOS static RAM with PowerSnooze™ deep-sleep mode, embedded single-bit error-correcting code (ECC), and TTL-compatible I/O. It operates across 1.65–2.2 V, delivers 15 ns access time, supports byte-level writes via BHE/ BLE, and features ERR pin for ECC event indication - deployed in mission-critical industrial controllers requiring data integrity and ultra-low standby power.

For engineers reviewing the CY7S1061G18-15ZSXI datasheet, CY7S1061G18-15ZSXI pinout, CY7S1061G18-15ZSXI application, or CY7S1061G18-15ZSXI equivalent, this page provides verified package mapping (48-ball VFBGA), confirmed ECC behavior, Deep Sleep current (≤22 µA), voltage-flexible operation (1.65–2.2 V), and functional distinction between CY7S1061G and CY7S1061GE variants.

Technical Context

This SRAM implements a synchronous, asynchronous interface with dual chip enable logic (CE1/CE2) and independent byte write control via BHE (I/O8–I/O15) and BLE (I/O0–I/O7). Its ECC engine detects and corrects single-bit errors on read access without automatic write-back, and signals correction events via the dedicated ERR output pin.

The device supports three V_CC ranges: 1.65–2.2 V (industrial grade), 2.2–3.6 V, and 4.5–5.5 V. In Deep Sleep mode (DS = LOW), it retains data at 1.0 V while drawing ≤22 µA, and resumes full operation within t_DS = 100 ns after DS de-assertion.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (6 mm × 8 mm × 1.0 mm), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with IS61WV102416BLL-15BLI and AS6C1008-15TIN, CY7S1061G18-15ZSXI uniquely combines 16-bit width, 15 ns speed, ≤22 µA Deep Sleep, and on-die ECC - making it the sole option for space-constrained, safety-aware industrial systems needing zero-error memory operation without external logic.

Availability

CY7S1061G18-15ZSXI is available at Aetrix Electronics and suitable for industrial PLC data logging, railway signaling controllers, and medical diagnostic imaging buffers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality across temperature extremes.

Supply support for CY7S1061G18-15ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions - with over 50 years of industrial-grade component heritage.

CY7S1061G18-15ZSXI belongs to Infineon's PowerSnooze™ SRAM product line, engineered specifically for industrial and transportation systems demanding simultaneous high speed, ultra-low power retention, and hardware-enforced data integrity.

FAQ

Does CY7S1061G18-15ZSXI support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read cycles but does not perform automatic write-back to memory. The corrected data appears on I/O lines, and the ERR pin pulses to signal the event. Host firmware must decide whether to re-write the corrected word based on system-level error policies and data criticality.

What is the maximum clock frequency supported for burst reads?

CY7S1061G18-15ZSXI is an asynchronous SRAM and does not use a clock signal. Its timing is governed by setup/hold relationships between CE, OE, WE, and address/data edges. With t_AA = 15 ns and t_OH = 5 ns, it supports sustained random-access rates up to ~45 MHz in practice, assuming proper PCB layout and termination.

Can the ERR pin be left unconnected if ECC is not used?

Yes. The ERR pin is open-drain and inactive (high-impedance) when no ECC event occurs. If ECC functionality is unused, ERR may be left floating or tied to V_CC via a 10-kΩ pull-up. No internal contention or leakage occurs, and device operation remains fully compliant with all DC/AC specifications.

Is the 48-ball VFBGA package compatible with standard reflow profiles?

Yes. The CY7S1061G18-15ZSXI in 48-ball VFBGA (JEDEC MO-276AA) is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for 30 seconds. Solder paste volume and stencil aperture design must follow Infineon's recommended 0.12 mm thickness and 0.35 mm × 0.35 mm openings per ball.