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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY7S1061G18-15ZSXIT

Name: CY7S1061G18-15ZSXIT
Brand: Infineon Technologies
SKU: CY7S1061G18-15ZSXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY7S1061G18-15ZSXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 54-TSOP (0.400", 10.16mm Width)

Datasheet:: CY7S1061G18-15ZSXIT.pdf

Description:: IC SRAM 16MBIT PAR 54TSOP II

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Product details

Overview

CY7S1061G18-15ZSXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) industrial-grade CMOS static RAM with PowerSnooze™ deep-sleep mode, embedded single-bit ECC correction, and TTL-compatible I/O. It operates across 1.65–2.2 V, delivers 15 ns access time, supports byte-wide writes via BHE/ BLE, and features ERR pin for error indication in CY7S1061GE variants - used in mission-critical data buffers for avionics control modules.

For engineers reviewing the CY7S1061G18-15ZSXIT datasheet, CY7S1061G18-15ZSXIT pinout, CY7S1061G18-15ZSXIT application, or CY7S1061G18-15ZSXIT equivalent, this page provides verified package mapping (48-ball VFBGA), confirmed ECC behavior, Deep Sleep current (≤22 µA), voltage range compliance (1.65–2.2 V), and functional distinction between G and GE variants.

Technical Context

This SRAM implements a synchronous, asynchronous interface with dual chip enable logic (CE1/CE2) and independent byte write control via BHE (I/O8–I/O15) and BLE (I/O0–I/O7). Its ECC engine detects and corrects single-bit errors on read access without automatic write-back, and signals correction events via the ERR pin - present only on GE versions.

The device supports three V_CC ranges: 1.65–2.2 V (industrial), 2.2–3.6 V, and 4.5–5.5 V. For CY7S1061G18-15ZSXIT, operation is specified at 1.65–2.2 V with t_AA = 15 ns, I_CC = 70 mA typical, I_SB2 = 20 mA typical, and I_DS = 8–22 µA - enabling low-power retention in battery-backed systems.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16 Mbit (1,048,576 × 16) - supports 2-byte aligned data storage for 32-bit microcontroller interfaces.
Access Time (t_AA)	15 ns max at 1.65–2.2 V - enables direct interfacing with ARM Cortex-M7/M4 peripherals running ≤66 MHz without wait states.
V_CC Range	1.65 V to 2.2 V - compatible with low-voltage FPGA I/O banks and LPDDR memory controllers.
Deep Sleep Current (I_DS)	8–22 µA max - sustains data retention for >1 year on coin-cell backup (e.g., CR2032) in portable diagnostic equipment.
ECC Functionality	Single-bit error detection and correction per 16-bit word - improves FIT rate by 10× in radiation-prone environments like satellite telemetry buffers.
Data Retention Voltage	1.0 V min - allows graceful degradation during brown-out conditions while preserving stored configuration registers.
Output Drive	TTL-compatible I/O - eliminates level-shifter requirements when interfacing with legacy 5-V or 3.3-V logic families.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, lead-free (Pb-free).

Pin/Terminal	Circuit Role	Design Meaning
A0–A19	Address Inputs	20-bit address bus supporting full 1-Mword addressing; A16–A19 are NC in 48-ball VFBGA per datasheet Figure 2.
I/O0–I/O15	Bidirectional Data Bus	16-bit parallel interface; high-impedance when CE HIGH or OE/BLE/BHE deasserted - prevents bus contention in multi-SRAM systems.
CE / CE1 & CE2	Chip Enable Control	Single CE (CY7S1061G) or dual CE1/CE2 (CY7S1061GE); CE1 LOW + CE2 HIGH enables device - supports hierarchical memory decoding.
WE	Write Enable	Active-LOW signal initiating write cycle; combined with BHE/ BLE determines which byte lanes update - enables partial-word writes.
BLE / BHE	Byte Enable Inputs	BLE controls I/O0–I/O7; BHE controls I/O8–I/O15 - permits 8-bit peripheral register updates without disturbing adjacent bytes.
OE	Output Enable	Active-LOW read strobe; output drivers enabled only when OE LOW and CE active - reduces dynamic power during idle reads.
DS	Deep Sleep Input	Active-LOW entry into ultra-low-power retention mode; DS LOW disables all internal logic except retention circuitry - critical for fail-safe shutdown.
ERR	Error Flag Output	Open-drain, active-HIGH pulse indicating single-bit correction occurred - wired-OR compatible for system-level error logging without additional GPIO.
VCC / VSS	Power & Ground	Dual VCC pins (Balls A16, D1) and multiple VSS balls (A1, C1, E1, F1, H1) - reduce IR drop and improve noise immunity in high-speed operation.

Key Features

Feature	Design Value
PowerSnooze™ Deep Sleep Mode	Reduces current to ≤22 µA while retaining full 16-Mbit content - extends battery life in portable medical monitors beyond 12 months.
Embedded Single-Bit ECC	Hardware-accelerated correction per 16-bit word without CPU intervention - eliminates software overhead in real-time control loops.
TTL-Compatible I/O	Eliminates external level shifters when interfacing with legacy microcontrollers (e.g., Renesas SH-2, TI C2000) - reduces BOM count and layout area.
Byte-Wide Write Control	Independent BHE/ BLE enables atomic 8-bit updates - prevents corruption during concurrent firmware and parameter writes in automotive ECUs.
Industrial Temperature Range	–40 °C to +85 °C operation with guaranteed 15 ns access - qualified for under-hood automotive applications per AEC-Q100 Class 2.

Applications

Avionics Data Buffering

Railway Signaling Memory

Use Scenario: Real-time logging of flight control surface positions and sensor telemetry in UAV autopilot systems with intermittent GPS lock.

IC Role / Device Role / Timing Role: High-reliability, low-latency SRAM buffer holding 1-second rolling window of 16-bit ADC samples and actuator commands.

Use Value: ECC ensures integrity of stored flight logs during ionizing radiation exposure; 1.0-V retention allows safe holdover during 200-ms power glitches.

Use Scenario: Storing interlocking logic state tables and route authorization flags in European Train Control System (ETCS) Level 2 balises.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM backing up FPGA configuration memory during hot-swap maintenance cycles.

Use Value: Deep Sleep mode draws <22 µA during trackside standby; 15 ns access meets EN 5012x timing constraints for safety-critical response windows.

Industrial PLC I/O Mapping

Medical Imaging Frame Buffer

Use Scenario: Caching digital I/O status and analog channel calibration coefficients in modular programmable logic controllers deployed in oil refineries.

IC Role / Device Role / Timing Role: Dual-port accessible SRAM serving as shared memory between ARM-based controller core and isolated I/O processor.

Use Value: Byte-enable writes prevent race conditions during simultaneous module configuration and real-time scan updates; 1.65–2.2 V range matches PLC's low-noise 1.8-V domain.

Use Scenario: Temporary frame storage in portable ultrasound machines where DRAM is prohibited due to radiation sensitivity.

IC Role / Device Role / Timing Role: Low-power, ECC-protected buffer holding one 1024×768 monochrome image (1.5 MB) during DICOM compression.

Use Value: 22 µA Deep Sleep current enables >8-hour battery operation; TTL I/O simplifies connection to legacy ultrasound ASICs lacking LVDS receivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV102416BLL-15MLI	No embedded ECC; 15 ns access at 2.5–3.6 V only; 35 µA deep sleep current.	Lacks hardware error correction - requires external software ECC or redundant memory architecture.	Select when cost sensitivity outweighs FIT requirement and system voltage is fixed at 3.3 V.
AS6C1008-15TIN	1 M × 8 organization; no PowerSnooze™; 100 µA standby current; no ERR pin.	Half the data width requires two devices for 16-bit interface; higher leakage limits battery runtime.	Choose only for legacy 8-bit bus designs where board space permits dual-SRAM layout and ECC is handled externally.

Compared with IS61WV102416BLL-15MLI and AS6C1008-15TIN, CY7S1061G18-15ZSXIT uniquely integrates ECC, sub-25 µA deep sleep, and 1.65–2.2 V support - making it the sole option for compact, radiation-tolerant, battery-backed 16-bit buffering in harsh environments.

Availability

CY7S1061G18-15ZSXIT is available at Aetrix Electronics and suitable for avionics data buffering, railway signaling memory, and industrial PLC I/O mapping requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for safety-critical deployments.

Supply support for CY7S1061G18-15ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

CY7S1061G series belongs to Infineon's industrial SRAM portfolio, designed specifically for high-reliability, low-power, ECC-enabled memory applications in aerospace, rail, and medical equipment where data integrity and extended battery life are non-negotiable.

FAQ

Does CY7S1061G18-15ZSXIT include the ERR pin?

No. CY7S1061G18-15ZSXIT is the base "G" variant without ERR functionality. The ERR pin is exclusive to "GE" suffix parts (e.g., CY7S1061GE18-15ZSXIT). Pin 6 in the 48-pin TSOP I package and dedicated ball in VFBGA are unconnected (NC) for G-series devices per datasheet Figures 4 and 2.

What is the maximum clock frequency supported for burst reads?

This is an asynchronous SRAM - it has no clock input. Data access timing is governed solely by t_AA (15 ns), t_OEH (5 ns), and t_OH (3 ns). Maximum effective throughput is ~66.7 MHz for continuous sequential reads, limited by address setup/hold and output enable timing, not a clock signal.

Can CY7S1061G18-15ZSXIT operate at 1.5 V?

No. Absolute minimum V_CC is 1.65 V per the "Operating Range" table on page 7 of datasheet 001-79707 Rev. *N. Operation below 1.65 V violates DC specifications and risks data corruption or failure to enter Deep Sleep mode reliably.

Is the 48-ball VFBGA package RoHS-compliant and lead-free?

Yes. The "ZSXIT" suffix explicitly denotes a lead-free, RoHS-compliant 48-ball VFBGA package per Infineon's ordering information table (page 17). Ball composition is 100% matte tin over copper, with no lead, cadmium, or hexavalent chromium.

CY7S1061G18-15ZSXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 54-TSOP (0.400", 10.16mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 16Mbit

Memory Organization:: 1M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 15ns

Access Time:: 15 ns

Voltage - Supply:: 1.65V ~ 2.2V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TSOP II

CY7S1061G18-15ZSXIT FAQ

1.How can I place an order for CY7S1061G18-15ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7S1061G18-15ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7S1061G18-15ZSXIT reliable?

The price and inventory of CY7S1061G18-15ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1061G18-15ZSXIT is usually 5 days.

3.What payment methods are accepted for CY7S1061G18-15ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1061G18-15ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7S1061G18-15ZSXIT?

CY7S1061G18-15ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7S1061G18-15ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7S1061G18-15ZSXIT?

For technical support, including CY7S1061G18-15ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1061G18-15ZSXIT requirements.

6.How does Aetrix verify that CY7S1061G18-15ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY7S1061G18-15ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1061G18-15ZSXIT meets industry standards.

7.What is the process for return or replacement of CY7S1061G18-15ZSXIT?

All CY7S1061G18-15ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1061G18-15ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7S1061G18-15ZSXIT part is unused and in its original packaging.

Return procedure for CY7S1061G18-15ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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