Infineon Technologies CY7S1061G30-10BVXI

Overview

CY7S1061G30-10BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports byte-level writes via BHE/ BLE, and features an ERR pin for single-bit error detection/correction - deployed in industrial control modules requiring high-reliability data retention.

For engineers reviewing the CY7S1061G30-10BVXI datasheet, CY7S1061G30-10BVXI pinout, CY7S1061G30-10BVXI application, or CY7S1061G30-10BVXI equivalent, this page provides verified package mapping (48-ball VFBGA), ECC behavior, Deep Sleep current (≤22 µA), voltage range (2.2–3.6 V), and functional pin roles - all confirmed against Infineon's official Rev. *N datasheet (001-79707).

Technical Context

This SRAM implements a synchronous, non-volatile-retention memory architecture with dual chip enable logic (CE1/CE2) and independent byte write control. Its ECC engine operates transparently during read cycles, correcting single-bit errors without CPU intervention and asserting the ERR pin to signal correction events.

The PowerSnooze™ feature enables hardware-controlled transition into Deep Sleep mode via the DS pin, reducing current to ≤22 µA while retaining data at 1.0 V. All I/Os enter high-impedance state when CE is deasserted or OE/BLE/BHE are inactive, ensuring clean bus isolation in multi-device systems.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (6 × 8 × 1.0 mm), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC and low-power sleep applications.

Compared with AS7C316098B-10BIN and IS61WV102416BLL-10MLI, CY7S1061G30-10BVXI uniquely combines on-die ECC correction, sub-25 µA Deep Sleep, and 10 ns access across 2.2–3.6 V - enabling certified, battery-constrained, high-integrity data buffering unattainable with either alternative.

Availability

CY7S1061G30-10BVXI is available at Aetrix Electronics and suitable for industrial PLC data buffers, railway signaling event loggers, and medical diagnostic imaging caches requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7S1061G30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO 9001 and IATF 16949 certification.

CY7S1061G30-10BVXI belongs to Infineon's PowerSnooze™ SRAM product line, engineered for mission-critical embedded systems demanding concurrent high speed, ultra-low power, and hardware-enforced data integrity.

FAQ

Does CY7S1061G30-10BVXI support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction autonomously during every read cycle. The embedded ECC logic operates transparently - no firmware driver, configuration register access, or timing adjustment is required. Correction occurs within the 10 ns access window, and the ERR pin pulses to notify the host only upon successful correction.

What is the minimum VCC required to retain data in Deep Sleep mode?

Data retention is guaranteed down to 1.0 V in Deep Sleep mode, as specified in the datasheet's Data Retention Characteristics table (page 9). This allows operation from depleted batteries or capacitor-based backup supplies without data loss, provided the DS pin remains LOW and ambient temperature stays within –40 °C to +85 °C.

Can the ERR pin be disabled or configured as a general-purpose I/O?

No. The ERR pin is a dedicated open-drain output with fixed functionality. It cannot be disabled, reconfigured, or used as a bidirectional I/O. Its sole purpose is to indicate single-bit correction events; it asserts HIGH for 1–2 ns after correction and remains LOW otherwise. No internal register controls this behavior.

Is the 48-ball VFBGA package of CY7S1061G30-10BVXI compatible with standard reflow profiles?

Yes. The part complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard Pb-free reflow profiles (peak temperature 260 °C, 60-second duration above 217 °C). The 1.0 mm height and 0.5 mm ball pitch are compatible with Class 7 automated placement and AOI inspection systems.