Infineon Technologies CY7S1061G30-10BVXIT

Overview

CY7S1061G30-10BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, TTL-compatible I/O, and 10 ns access time. It operates across three voltage ranges (2.2–3.6 V, 1.65–2.2 V, 4.5–5.5 V), delivers 90 mA typical active current, and supports byte-level writes via BHE/ BLE in industrial temperature range (–40 °C to +85 °C). Used in mission-critical embedded controllers requiring data integrity and ultra-low-power retention.

For engineers reviewing the CY7S1061G30-10BVXIT datasheet, CY7S1061G30-10BVXIT pinout, CY7S1061G30-10BVXIT application, or CY7S1061G30-10BVXIT equivalent, this page provides verified package mapping, ECC behavior, Deep Sleep current validation (≤22 µA), byte-enable timing, and functional alternatives for SRAM-based BOM optimization.

Technical Context

This SRAM implements a synchronous, single-cycle read/write interface with dual chip enable logic (CE1/CE2) and independent byte write control via BHE (I/O8–I/O15) and BLE (I/O0–I/O7). The embedded ECC engine detects and corrects single-bit errors on every read access without external logic, but does not perform automatic write-back upon correction.

Deep Sleep mode is activated by asserting DS = LOW while CE is deasserted, reducing current to ≤22 µA while retaining data at 1.0 V. The ERR pin (present only on CY7S1061GE variants) signals error detection/correction events; CY7S1061G30-10BVXIT omits ERR and uses the 48-ball VFBGA package with NC pins at A16 and position H1.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, 0.5 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with IS61WV102416BLL-10MLI and MT28EW128FADAHx-0SIT, CY7S1061G30-10BVXIT uniquely combines parallel-interface speed, hardware ECC, ultra-low deep-sleep current, and multi-voltage support - making it the sole option for safety-certified, battery-operated, real-time memory buffering.

Availability

CY7S1061G30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC data logging, automotive ADAS sensor buffering, and medical infusion pump control requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.

Supply support for CY7S1061G30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and high-reliability memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

CY7S1061G30-10BVXIT belongs to Infineon's PowerSnooze™ SRAM product line, engineered for industrial and automotive applications demanding simultaneous high speed, ultra-low standby power, and hardware-enforced data integrity.

FAQ

Does CY7S1061G30-10BVXIT include an ERR pin?

No. CY7S1061G30-10BVXIT is the base CY7S1061G variant and does not feature the ERR output pin. That functionality is exclusive to the CY7S1061GE suffix version. This part relies on system-level polling or external monitoring for ECC event awareness, as confirmed in the Functional Description section of datasheet 001-79707 Rev. *N.

What is the maximum clock frequency supported for continuous burst reads?

The device has no internal clock; it is asynchronous. Maximum sustained data throughput is determined by tAA (10 ns) and cycle time tRC (20 ns), enabling up to 50 million 16-bit words per second in ideal conditions. Real-world performance depends on bus controller timing margins and PCB trace length, not a clock frequency specification.

Can CY7S1061G30-10BVXIT operate at 1.8 V?

No. This specific variant (suffix "30") is rated for 2.2–3.6 V operation only. The 1.65–2.2 V range applies exclusively to CY7S1061G18 variants. Attempting 1.8 V operation violates the Absolute Maximum Ratings table and risks data retention failure or undefined timing behavior.

Is the 48-ball VFBGA package lead-free and RoHS compliant?

Yes. CY7S1061G30-10BVXIT uses a Pb-free, RoHS-compliant VFBGA package with matte tin surface finish, as documented in the Ordering Information section (page 17) and Package Diagrams (page 18) of datasheet 001-79707 Rev. *N. The "XIT" suffix explicitly denotes industrial temperature and Pb-free compliance.