Infineon Technologies CY7S1061G30-10ZSXI

Overview

CY7S1061G30-10ZSXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep Sleep mode (IDS ≤ 22 µA), 10 ns access time, and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and supports byte-level writes via BHE/ BLE in industrial temperature range (–40 °C to +85 °C).

For engineers reviewing the CY7S1061G30-10ZSXI datasheet, CY7S1061G30-10ZSXI pinout, CY7S1061G30-10ZSXI application, or CY7S1061G30-10ZSXI equivalent, key selection criteria include ECC-enabled data integrity for mission-critical memory buffers, sub-25 µA Deep Sleep current for battery-backed systems, dual-chip-enable logic compatibility, and 48-ball VFBGA package suitability for space-constrained embedded controllers.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory architecture with dedicated ECC logic that detects and corrects single-bit errors during read cycles without automatic write-back. The ERR pin asserts on correction events, enabling system-level error logging.

It supports three distinct V_CC operating domains with corresponding timing and current specifications, and uses dual chip enable (CE1/CE2) or single CE logic depending on configuration. Byte write control is implemented via separate BHE (I/O8–I/O15) and BLE (I/O0–I/O7) inputs, allowing partial-word updates without full-word masking.

Key Specifications

Pinout & Package

The CY7S1061G30-10ZSXI is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant and Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC and low-power sleep applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7S1061G30-10ZSXI uniquely delivers integrated ECC + sub-25 µA Deep Sleep in a compact VFBGA, making it the only option meeting simultaneous requirements for data integrity, ultra-low quiescent power, and modern packaging in industrial and aerospace applications.

Availability

CY7S1061G30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, automotive ADAS sensor fusion, and avionics flight data recording requiring stable component supply across extended product lifecycles.

Supply support for CY7S1061G30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

CY7S1061G30-10ZSXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability, low-power embedded systems demanding ECC protection and multi-voltage flexibility in space-constrained layouts.

FAQ

Does CY7S1061G30-10ZSXI support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to the memory array. The corrected data appears on the I/O bus, and the ERR pin signals the event. System firmware must handle any required logging or recovery actions.

What is the function of the DS pin, and how does it differ from standard standby modes?

The DS (Deep Sleep) pin is an active-LOW input that places the device into an ultra-low-power retention state with IDS ≤ 22 µA. Unlike standard standby (ISB2 ≈ 20 mA), Deep Sleep disables internal circuitry except for the memory core and ECC logic, preserving data at 1.0 V VCC while minimizing current draw by over three orders of magnitude.

Can CY7S1061G30-10ZSXI operate reliably at 1.8 V?

Yes - it is fully specified for 1.65 V to 2.2 V operation, including 1.8 V nominal. At 1.8 V, tAA is 15 ns (CY7S1061G18 variant), but the CY7S1061G30-10ZSXI is rated for 10 ns only at 2.2–3.6 V. For 1.8 V designs requiring 10 ns speed, verify timing margins using the 1.8 V AC characteristics table in Rev. *N datasheet page 11.

Is the ERR pin present on all package variants of CY7S1061G30-10ZSXI?

No. The ERR pin is included only on CY7S1061GE variants (e.g., CY7S1061GE30-10ZSXI). The base CY7S1061G30-10ZSXI lacks the ERR pin - its ECC correction is silent. Pin 6 in the 48-pin TSOP I package and ball H2 in the 48-ball VFBGA are NC for the G version, while the GE version routes ERR to those locations.