Infineon Technologies CY7S1061G30-10ZSXIT

Overview

CY7S1061G30-10ZSXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) asynchronous CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports byte-level writes via BHE/ BLE, and features an ERR pin for single-bit error detection/correction - deployed in industrial control memory buffers requiring data integrity and ultra-low standby power.

For engineers reviewing the CY7S1061G30-10ZSXIT datasheet, CY7S1061G30-10ZSXIT pinout, CY7S1061G30-10ZSXIT application, or CY7S1061G30-10ZSXIT equivalent, this page provides verified package mapping (48-ball VFBGA), ECC behavior details, Deep Sleep current (≤22 µA), dual-chip enable logic, and byte-write control semantics - all critical for memory subsystem validation in safety-aware embedded systems.

Technical Context

This SRAM implements a synchronous-free, fully static architecture with independent address/data buses and separate byte-enable control (BHE/BLE) for true 8-bit sub-word writes without external logic. Its ECC engine operates transparently during read cycles, asserting the ERR pin only upon single-bit correction - no automatic write-back or interrupt generation.

The device supports three V_CC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) with distinct timing and current profiles; the -10ZSXIT variant is specified for 2.2–3.6 V operation at 10 ns t_AA, with ISB2 = 20 mA typical and IDS = 22 µA max in Deep Sleep mode activated by DS pin low.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7S1061G30-10ZSXIT uniquely integrates ECC correction, Deep Sleep retention, and byte-selectable writes in a single 48-ball VFBGA - reducing BOM count, PCB area, and firmware complexity in safety-critical memory subsystems.

Availability

CY7S1061G30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical data loggers, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7S1061G30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and memory solutions with ISO 9001 and IATF 16949 certified manufacturing.

This device belongs to Infineon's legacy Cypress SRAM portfolio, engineered for high-reliability embedded systems demanding deterministic timing, ultra-low power retention, and hardware-based data integrity - particularly in industrial automation and transportation infrastructure.

FAQ

Does CY7S1061G30-10ZSXIT support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to memory. The corrected data appears on I/O lines, and the host system must initiate a write cycle if permanent correction is required. This behavior is explicitly documented in Note 2 of the datasheet (Document Number: 001-79707 Rev. *N).

What is the function of the DS pin during normal operation?

The DS (Deep Sleep) pin must be held HIGH (≥V_CC – 0.2 V) for standard read/write operation. Driving DS LOW forces the device into Deep Sleep mode regardless of CE/OE/WE states, disabling all internal logic except data retention circuitry and placing I/Os in high-impedance. No address or data activity is possible in this state.

Can CY7S1061G30-10ZSXIT operate at 1.8 V?

No. This variant is rated exclusively for 2.2 V to 3.6 V operation. For 1.65–2.2 V operation, the CY7S1061G18-15ZSXIT (15 ns access) is the qualified part. Attempting 1.8 V operation on the -30 variant violates the absolute maximum ratings and may cause undefined behavior or data loss.

Is the ERR pin asserted for uncorrectable multi-bit errors?

No. The ERR pin activates only for single-bit errors that are successfully corrected. Multi-bit errors are detected but not corrected, and the ERR pin remains inactive. The device does not provide status indication for uncorrectable errors - system-level monitoring must rely on application-layer checksums or external ECC controllers.