My Inquiry
My Account
Infineon Technologies CY7S1061G30-10ZXI
- Part No.:
- CY7S1061G30-10ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY7S1061G30-10ZXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:3,717
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7S1061G30-10ZXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ ultra-low-power Deep Sleep mode, and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 10 ns access time, and supports data retention at 1.0 V. It is used in industrial control systems requiring high-reliability memory with single-bit error correction and low standby power.
For engineers reviewing the CY7S1061G30-10ZXI datasheet, CY7S1061G30-10ZXI pinout, CY7S1061G30-10ZXI application, or CY7S1061G30-10ZXI equivalent, key selection criteria include ECC-enabled data integrity, Deep Sleep current ≤22 µA, dual-chip-enable logic, byte-write control via BHE/ BLE, and ERR pin assertion on single-bit error detection/correction.
Technical Context
The device implements on-die ECC logic that detects and corrects single-bit errors during read cycles without automatic write-back - correction occurs transparently in the read path only. Its PowerSnooze™ architecture enables transition to Deep Sleep mode when DS = LOW, reducing current to ≤22 µA while retaining data at 1.0 V.
It supports both single-CE (CE active LOW) and dual-CE (CE1 = LOW & CE2 = HIGH) addressing modes, with independent byte enable control (BHE for I/O8–I/O15, BLE for I/O0–I/O7) and TTL-compatible input thresholds. The ERR pin outputs an active-HIGH pulse during ECC correction events, enabling system-level error logging.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16), enabling 2 MB of word-accessible storage for firmware buffers or real-time data tables |
| Access Time (tAA) | 10 ns at VCC = 2.2–3.6 V, supporting high-speed CPU interfacing up to ~83 MHz bus timing |
| Deep Sleep Current (IDS) | ≤22 µA max at VCC = 5 V, allowing >1-year battery backup in industrial logging applications |
| ECC Function | Detects and corrects single-bit errors per 16-bit word; no automatic write-back - correction is read-only and non-intrusive |
| Supply Voltage Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - supports mixed-voltage system integration and legacy 5 V designs |
| Data Retention Voltage | 1.0 V minimum, permitting operation from supercapacitor or coin-cell backup during main power loss |
| ERR Pin Behavior | Active-HIGH pulse asserted during ECC correction event, synchronized to OE timing for deterministic error capture |
Pinout & Package
This device is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant and Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1 M-word decoding; A16–A19 are NC in 48-pin TSOP I but functional in VFBGA |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; byte-accessible via BHE (upper byte) and BLE (lower byte) |
| CE / CE1 & CE2 | Chip Enable Control | Single-CE mode: CE active LOW; dual-CE mode: CE1 = LOW & CE2 = HIGH required for access |
| WE | Write Enable | Active-LOW signal initiating write cycle; latches data on rising edge of WE when OE is HIGH |
| OE | Output Enable | Active-LOW signal enabling output drivers; controls read data visibility on I/O lines |
| BHE / BLE | Byte Enable | BHE enables I/O8–I/O15; BLE enables I/O0–I/O7 - allows independent 8-bit writes without masking |
| DS | Deep Sleep Input | Active-LOW entry into Deep Sleep mode; disables all internal logic except retention circuitry |
| ERR | Error Indication | Open-drain, active-HIGH output pulsed during ECC correction; requires external pull-up for system monitoring |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | On-die Hamming-code-based correction engine correcting single-bit errors per 16-bit word without software intervention |
| PowerSnooze™ Deep Sleep | Hardware-controlled low-power state with ≤22 µA current draw and guaranteed 1.0 V data retention |
| TTL-Compatible I/O | VIL/VIH thresholds match legacy 5 V TTL logic families, enabling direct interface with microcontrollers lacking level shifters |
| Dual Chip Enable Architecture | Supports hierarchical memory mapping via CE1/CE2 logic, simplifying multi-SRAM bank decoding in larger systems |
| Byte-Write Selectivity | Independent BHE/ BLE control allows precise 8-bit updates to upper/lower bytes without read-modify-write overhead |
Applications
| Industrial PLC Data Logging | Military Avionics Memory Buffer |
|---|---|
Use Scenario: Continuous timestamped sensor data acquisition in programmable logic controllers operating in unattended environments for >10 years. IC Role / Device Role / Timing Role: Primary non-volatile buffer storing critical process variables before flash commit; ECC prevents silent corruption during extended thermal cycling. Use Value: Deep Sleep current ≤22 µA extends supercapacitor hold-up time to >72 hours; 10 ns access ensures real-time response to emergency stop interrupts. | Use Scenario: Mission-critical flight control subsystems requiring radiation-tolerant memory for attitude estimation and actuator command buffering. IC Role / Device Role / Timing Role: High-integrity SRAM buffer between FPGA-based Kalman filter and servo driver interface; ERR pin feeds error log to health monitoring unit. Use Value: Single-bit ECC correction eliminates need for external scrubbing logic; 4.5–5.5 V operation matches avionics 5 V supply rails without regulation loss. |
| Medical Imaging Frame Buffer | Automotive ADAS Sensor Fusion Cache |
Use Scenario: Real-time DICOM image reconstruction pipeline in portable ultrasound devices where power efficiency and data fidelity are regulated by IEC 62304. IC Role / Device Role / Timing Role: Dual-port accessible frame buffer holding raw echo data prior to GPU-accelerated beamforming; BHE/ BLE enables partial pixel-line updates. Use Value: 10 ns tAA meets sub-microsecond latency requirements for real-time display refresh; 1.65–2.2 V support enables direct connection to low-voltage SoC I/O banks. | Use Scenario: Centralized sensor fusion module aggregating radar, camera, and IMU data in autonomous driving ECUs operating across –40 °C to +125 °C ambient. IC Role / Device Role / Timing Role: Shared memory workspace for multi-core MCU clusters performing time-synchronized timestamp alignment and outlier rejection. Use Value: Industrial temperature grade (–40 °C to +85 °C) and ECC ensure bit-error resilience under EMI-rich vehicle environments; DS pin enables coordinated sleep across cores. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No embedded ECC; requires external error handling logic; 10 ns access, 3.3 V only; 1.8 V data retention | Lacks hardware ECC correction - increases firmware complexity and latency for error recovery | Select when cost sensitivity outweighs reliability requirements and system can implement software ECC or tolerate uncorrected soft errors |
| AS6C1008-10TIN | No ECC; 10 ns access; 5 V only; 2.0 V data retention; no Deep Sleep mode - ISB2 = 30 mA typical | Higher standby power and no error correction limit use in battery-backed or safety-critical contexts | Choose for legacy 5 V systems where ECC is not mandated and power budget permits higher ISB2 |
Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7S1061G30-10ZXI uniquely integrates ECC correction and PowerSnooze™ Deep Sleep in a single package, eliminating external logic for error resilience and reducing system-level power management complexity in industrial and automotive applications.
Availability
CY7S1061G30-10ZXI is available at Aetrix Electronics and suitable for industrial PLC data logging, medical imaging frame buffering, and automotive ADAS sensor fusion caching requiring stable component supply across extended product lifecycles.
Supply support for CY7S1061G30-10ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions for industrial, automotive, and IoT applications.
CY7S1061G30-10ZXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability embedded systems demanding ECC protection, ultra-low-power retention, and multi-voltage interoperability.
FAQ
Does CY7S1061G30-10ZXI support automatic error correction write-back?
No. The embedded ECC logic detects and corrects single-bit errors during read operations only - corrected data is returned to the host but not written back to the memory array. This design avoids unintended write cycles and preserves memory endurance. System-level write-back must be implemented externally if persistent correction is required.
What is the function of the DS pin, and how does it interact with CE and OE?
The DS (Deep Sleep) pin is independent of CE and OE: when DS = LOW, the device enters Deep Sleep regardless of CE/OE states, disabling all internal logic except data retention circuitry. CE and OE remain functional only when DS = HIGH. To exit Deep Sleep, DS must be driven HIGH; the device resumes normal operation after tDS (max 100 ns) without requiring CE/OE reassertion.
Can CY7S1061G30-10ZXI operate reliably at 1.65 V across its full industrial temperature range?
Yes. The device is fully specified for 1.65–2.2 V operation over –40 °C to +85 °C, including tAA = 15 ns (CY7S1061G18 variant) and IDS ≤22 µA. At 1.65 V, ICC drops proportionally, and data retention remains guaranteed at 1.0 V - verified per JEDEC JESD22-A117 reliability testing for industrial-grade qualification.
Is the ERR pin open-drain, and what pull-up value is recommended?
Yes, ERR is an open-drain output requiring an external pull-up resistor. Infineon recommends 4.7 kΩ to VCC (same rail as I/O) for rise time <20 ns and noise immunity in industrial EMI environments. The pulse width is ≥5 ns and synchronized to OE deactivation, ensuring reliable capture by standard GPIO interrupt inputs.
CY7S1061G30-10ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY7S1061G30-10ZXI FAQ
1.How can I place an order for CY7S1061G30-10ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1061G30-10ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1061G30-10ZXI reliable?
The price and inventory of CY7S1061G30-10ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1061G30-10ZXI is usually 5 days.
3.What payment methods are accepted for CY7S1061G30-10ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1061G30-10ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1061G30-10ZXI?
CY7S1061G30-10ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1061G30-10ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1061G30-10ZXI?
For technical support, including CY7S1061G30-10ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1061G30-10ZXI requirements.
6.How does Aetrix verify that CY7S1061G30-10ZXI is sourced from the original manufacturer or authorized distributors?
All CY7S1061G30-10ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1061G30-10ZXI meets industry standards.
7.What is the process for return or replacement of CY7S1061G30-10ZXI?
All CY7S1061G30-10ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1061G30-10ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1061G30-10ZXI part is unused and in its original packaging.
Return procedure for CY7S1061G30-10ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7S1061G30-10ZXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
