Infineon Technologies CY7S1061G30-10ZXIT
- Part No.:
- CY7S1061G30-10ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY7S1061G30-10ZXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:

- Shipping:

Inventory:1,847
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Product details
Overview
CY7S1061G30-10ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports byte-level writes via BHE/ BLE, and features an ERR pin for single-bit error detection/correction-used in industrial control memory buffers requiring data integrity and ultra-low standby power.
For engineers reviewing the CY7S1061G30-10ZXIT datasheet, CY7S1061G30-10ZXIT pinout, CY7S1061G30-10ZXIT application, or CY7S1061G30-10ZXIT equivalent, key selection criteria include ECC-enabled reliability, 22 µA deep-sleep current, 10 ns tAA timing, multi-voltage support (2.2–3.6 V), and 48-ball VFBGA package compatibility with space-constrained embedded systems.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory architecture with dedicated ECC logic that detects and corrects single-bit errors on read access without automatic write-back. The ERR pin asserts during correction events, enabling system-level fault logging.
PowerSnooze™ operation is controlled by the DS pin: asserting DS LOW disables all internal circuitry except retention latches, reducing ICC to ≤22 µA while preserving data at 1.0 V. Address and data I/Os are fully TTL-compatible across all supported VCC ranges, eliminating level-shifting requirements in mixed-voltage designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 16 Mbit (1,048,576 × 16 bits) - supports 2 MB of word-addressable storage for firmware caching or real-time data buffering. |
| Access time (tAA) | 10 ns at 2.2–3.6 V - enables direct interfacing with 100 MHz microcontrollers without wait states. |
| Deep-sleep current (IDS) | ≤22 µA - allows battery-backed operation for >1 year in low-duty-cycle industrial sensors. |
| ECC capability | Single-bit error detection and correction per 16-bit word - eliminates soft-error-induced crashes in mission-critical control applications. |
| Supply voltage range | 2.2 V to 3.6 V - compatible with modern 3.3 V and 2.5 V logic domains without external regulators. |
| Data retention voltage | 1.0 V - maintains stored content during brown-out conditions below functional VCC minimum. |
| ERR pin function | Dedicated open-drain output signaling ECC correction event - enables deterministic error handling in safety-aware firmware. |
Pinout & Package
The CY7S1061G30-10ZXIT is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant and Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address inputs | 20-bit address bus supporting full 1 M-word decoding; A16–A19 are NC in 512K-word configurations. |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface with high-impedance tri-state control; supports byte writes via BHE/ BLE. |
| CE / CE1 / CE2 | Chip enable (dual-mode) | CE = CE1 LOW + CE2 HIGH enables device; CE1 HIGH or CE2 LOW disables all outputs and reduces ISB2 to 20 mA. |
| WE | Write enable | Active-LOW control for write cycles; combined with OE and BHE/ BLE determines write granularity and direction. |
| OE | Output enable | Active-LOW control for read data output; deassertion places I/Os in high-Z state regardless of CE status. |
| BHE / BLE | Byte enable controls | BHE enables I/O8–I/O15 (upper byte); BLE enables I/O0–I/O7 (lower byte); both HIGH disables writes. |
| DS | Deep-Sleep control | Active-LOW entry into ultra-low-power retention mode; requires VCC ≥ 2.2 V and stable address/data hold. |
| ERR | Error indication | Open-drain output pulsed LOW during ECC correction; requires external pull-up for system interrupt generation. |
| VCC / VSS | Power supply / ground | Separate VCC pins (balls D1, E1, F1) reduce IR drop; dual VSS balls (A1, H1) improve noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| PowerSnooze™ Deep Sleep | 22 µA max IDS at 3.0 V enables >1-year battery life in remote telemetry nodes without compromising data retention. |
| Embedded ECC logic | Hardware-accelerated single-bit correction per 16-bit word eliminates need for software-based checksum overhead in safety-critical firmware. |
| TTL-compatible I/O | No level shifters required when interfacing with legacy 3.3 V or 5 V microcontrollers-reduces BOM count and layout complexity. |
| Byte-select write control | Independent BHE/ BLE signals allow precise 8-bit updates to memory-mapped peripherals without disturbing adjacent bytes. |
| Multi-voltage operation | Valid operation across 2.2–3.6 V simplifies integration into mixed-rail systems sharing power supplies with ADCs, sensors, and RF transceivers. |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Storing real-time sensor fusion results and control loop history in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: High-reliability SRAM buffer with ECC ensuring deterministic behavior during EMI exposure and voltage transients. Use Value: Prevents silent data corruption in safety-critical motion control sequences-validated under IEC 61000-4-4 surge testing. |
Use Scenario: Caching raw imaging data from ultrasound front-ends before compression and transmission to host processors. IC Role / Device Role / Timing Role: Low-latency, low-power memory staging buffer enabling burst-mode acquisition without DRAM controller overhead. Use Value: 10 ns tAA and 22 µA IDS extend battery runtime in portable diagnostic devices while maintaining image fidelity. |
| Avionics Flight Data Recorder | Railway Signaling Event Logger |
|
Use Scenario: Capturing timestamped flight parameters (attitude, altitude, engine metrics) during extended missions with intermittent power. IC Role / Device Role / Timing Role: Retentive memory node preserving critical data during brown-outs using 1.0 V data retention capability. Use Value: Meets DO-160 Section 16 transient tolerance requirements with zero data loss across 100+ power interruption cycles. |
Use Scenario: Logging track occupancy events and interlocking state transitions in wayside signaling cabinets exposed to wide temperature swings. IC Role / Device Role / Timing Role: Industrial-grade SRAM with –40 °C to +85 °C operation and ECC protecting against cosmic-ray-induced bit flips. Use Value: Eliminates unscheduled maintenance due to memory corruption in EN 5012x-certified signaling infrastructure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | No ECC; 10 ns access; 5 V only; 32-pin SOJ package | Lacks error correction-requires external software CRC or redundant storage for reliability-critical use | Select only if cost sensitivity outweighs data integrity requirements and 5 V supply is fixed. |
| IS61WV102416BLL-10MLI | ECC not integrated; 10 ns access; 2.5–3.6 V; 48-pin TSOP II | Requires external ECC controller IC and additional PCB area; no ERR pin for hardware-triggered response | Choose when existing design uses TSOP II footprint and ECC logic is already implemented externally. |
Compared with AS6C1008-10TIN and IS61WV102416BLL-10MLI, CY7S1061G30-10ZXIT uniquely integrates ECC, ERR signaling, and PowerSnooze™ in a compact VFBGA-reducing component count, board area, and firmware complexity for safety-aware embedded systems.
Availability
CY7S1061G30-10ZXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and avionics flight data recorders requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.
Supply support for CY7S1061G30-10ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full Cypress memory portfolio, including high-reliability SRAMs for industrial and automotive applications.
CY7S1061G30-10ZXIT belongs to Infineon's PowerSnooze™ SRAM product line, designed specifically for embedded systems demanding simultaneous high speed, ultra-low power, and hardware-level data integrity-targeting industrial automation, medical instrumentation, and transportation control.
FAQ
Does CY7S1061G30-10ZXIT support automatic error correction write-back?
No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to memory. The corrected data appears on I/O lines, and the ERR pin pulses to signal the event-leaving correction logging and recovery strategy to the host system firmware.
What is the maximum clock frequency supported for continuous read/write cycling?
The device has no internal clock; it is asynchronous. Maximum sustained operation is determined by tCYC (cycle time), specified as 10 ns minimum for 2.2–3.6 V operation-enabling up to 100 MHz burst access when interfaced with appropriate address setup/hold timing from the controller.
Can the ERR pin be left unconnected if ECC functionality is unused?
Yes. The ERR pin is open-drain and inactive (high-impedance) when no correction occurs. If ECC monitoring is not required, the pin may be left floating or tied to VCC via a pull-up resistor-no functional impact on memory operation or power consumption.
Is the 48-ball VFBGA package of CY7S1061G30-10ZXIT compatible with standard reflow profiles?
Yes. The part is qualified for lead-free reflow per J-STD-020D, with peak temperature up to 260 °C and time above liquidus of 60–150 seconds. Its 0.5 mm ball pitch and 1.0 mm profile support standard Type III stencil printing and automated optical inspection.
CY7S1061G30-10ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY7S1061G30-10ZXIT FAQ
1.How can I place an order for CY7S1061G30-10ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1061G30-10ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1061G30-10ZXIT reliable?
The price and inventory of CY7S1061G30-10ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1061G30-10ZXIT is usually 5 days.
3.What payment methods are accepted for CY7S1061G30-10ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1061G30-10ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1061G30-10ZXIT?
CY7S1061G30-10ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1061G30-10ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1061G30-10ZXIT?
For technical support, including CY7S1061G30-10ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1061G30-10ZXIT requirements.
6.How does Aetrix verify that CY7S1061G30-10ZXIT is sourced from the original manufacturer or authorized distributors?
All CY7S1061G30-10ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1061G30-10ZXIT meets industry standards.
7.What is the process for return or replacement of CY7S1061G30-10ZXIT?
All CY7S1061G30-10ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1061G30-10ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1061G30-10ZXIT part is unused and in its original packaging.
Return procedure for CY7S1061G30-10ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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