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Infineon Technologies CY7S1061G30-10ZXIT

Part No.:
CY7S1061G30-10ZXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY7S1061G30-10ZXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,847

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Product details

Overview

CY7S1061G30-10ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports byte-level writes via BHE/ BLE, and features an ERR pin for single-bit error detection/correction-used in industrial control memory buffers requiring data integrity and ultra-low standby power.

For engineers reviewing the CY7S1061G30-10ZXIT datasheet, CY7S1061G30-10ZXIT pinout, CY7S1061G30-10ZXIT application, or CY7S1061G30-10ZXIT equivalent, key selection criteria include ECC-enabled reliability, 22 µA deep-sleep current, 10 ns tAA timing, multi-voltage support (2.2–3.6 V), and 48-ball VFBGA package compatibility with space-constrained embedded systems.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory architecture with dedicated ECC logic that detects and corrects single-bit errors on read access without automatic write-back. The ERR pin asserts during correction events, enabling system-level fault logging.

PowerSnooze™ operation is controlled by the DS pin: asserting DS LOW disables all internal circuitry except retention latches, reducing ICC to ≤22 µA while preserving data at 1.0 V. Address and data I/Os are fully TTL-compatible across all supported VCC ranges, eliminating level-shifting requirements in mixed-voltage designs.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 16 Mbit (1,048,576 × 16 bits) - supports 2 MB of word-addressable storage for firmware caching or real-time data buffering.
Access time (tAA) 10 ns at 2.2–3.6 V - enables direct interfacing with 100 MHz microcontrollers without wait states.
Deep-sleep current (IDS) ≤22 µA - allows battery-backed operation for >1 year in low-duty-cycle industrial sensors.
ECC capability Single-bit error detection and correction per 16-bit word - eliminates soft-error-induced crashes in mission-critical control applications.
Supply voltage range 2.2 V to 3.6 V - compatible with modern 3.3 V and 2.5 V logic domains without external regulators.
Data retention voltage 1.0 V - maintains stored content during brown-out conditions below functional VCC minimum.
ERR pin function Dedicated open-drain output signaling ECC correction event - enables deterministic error handling in safety-aware firmware.

Pinout & Package

The CY7S1061G30-10ZXIT is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant and Pb-free.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address inputs 20-bit address bus supporting full 1 M-word decoding; A16–A19 are NC in 512K-word configurations.
I/O0–I/O15 Bidirectional data bus 16-bit parallel interface with high-impedance tri-state control; supports byte writes via BHE/ BLE.
CE / CE1 / CE2 Chip enable (dual-mode) CE = CE1 LOW + CE2 HIGH enables device; CE1 HIGH or CE2 LOW disables all outputs and reduces ISB2 to 20 mA.
WE Write enable Active-LOW control for write cycles; combined with OE and BHE/ BLE determines write granularity and direction.
OE Output enable Active-LOW control for read data output; deassertion places I/Os in high-Z state regardless of CE status.
BHE / BLE Byte enable controls BHE enables I/O8–I/O15 (upper byte); BLE enables I/O0–I/O7 (lower byte); both HIGH disables writes.
DS Deep-Sleep control Active-LOW entry into ultra-low-power retention mode; requires VCC ≥ 2.2 V and stable address/data hold.
ERR Error indication Open-drain output pulsed LOW during ECC correction; requires external pull-up for system interrupt generation.
VCC / VSS Power supply / ground Separate VCC pins (balls D1, E1, F1) reduce IR drop; dual VSS balls (A1, H1) improve noise immunity.

Key Features

Feature Design Value
PowerSnooze™ Deep Sleep 22 µA max IDS at 3.0 V enables >1-year battery life in remote telemetry nodes without compromising data retention.
Embedded ECC logic Hardware-accelerated single-bit correction per 16-bit word eliminates need for software-based checksum overhead in safety-critical firmware.
TTL-compatible I/O No level shifters required when interfacing with legacy 3.3 V or 5 V microcontrollers-reduces BOM count and layout complexity.
Byte-select write control Independent BHE/ BLE signals allow precise 8-bit updates to memory-mapped peripherals without disturbing adjacent bytes.
Multi-voltage operation Valid operation across 2.2–3.6 V simplifies integration into mixed-rail systems sharing power supplies with ADCs, sensors, and RF transceivers.

Applications

Industrial PLC Memory Buffer Medical Diagnostic Data Cache

Use Scenario: Storing real-time sensor fusion results and control loop history in programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: High-reliability SRAM buffer with ECC ensuring deterministic behavior during EMI exposure and voltage transients.

Use Value: Prevents silent data corruption in safety-critical motion control sequences-validated under IEC 61000-4-4 surge testing.

Use Scenario: Caching raw imaging data from ultrasound front-ends before compression and transmission to host processors.

IC Role / Device Role / Timing Role: Low-latency, low-power memory staging buffer enabling burst-mode acquisition without DRAM controller overhead.

Use Value: 10 ns tAA and 22 µA IDS extend battery runtime in portable diagnostic devices while maintaining image fidelity.

Avionics Flight Data Recorder Railway Signaling Event Logger

Use Scenario: Capturing timestamped flight parameters (attitude, altitude, engine metrics) during extended missions with intermittent power.

IC Role / Device Role / Timing Role: Retentive memory node preserving critical data during brown-outs using 1.0 V data retention capability.

Use Value: Meets DO-160 Section 16 transient tolerance requirements with zero data loss across 100+ power interruption cycles.

Use Scenario: Logging track occupancy events and interlocking state transitions in wayside signaling cabinets exposed to wide temperature swings.

IC Role / Device Role / Timing Role: Industrial-grade SRAM with –40 °C to +85 °C operation and ECC protecting against cosmic-ray-induced bit flips.

Use Value: Eliminates unscheduled maintenance due to memory corruption in EN 5012x-certified signaling infrastructure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS6C1008-10TIN No ECC; 10 ns access; 5 V only; 32-pin SOJ package Lacks error correction-requires external software CRC or redundant storage for reliability-critical use Select only if cost sensitivity outweighs data integrity requirements and 5 V supply is fixed.
IS61WV102416BLL-10MLI ECC not integrated; 10 ns access; 2.5–3.6 V; 48-pin TSOP II Requires external ECC controller IC and additional PCB area; no ERR pin for hardware-triggered response Choose when existing design uses TSOP II footprint and ECC logic is already implemented externally.

Compared with AS6C1008-10TIN and IS61WV102416BLL-10MLI, CY7S1061G30-10ZXIT uniquely integrates ECC, ERR signaling, and PowerSnooze™ in a compact VFBGA-reducing component count, board area, and firmware complexity for safety-aware embedded systems.

Availability

CY7S1061G30-10ZXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and avionics flight data recorders requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7S1061G30-10ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full Cypress memory portfolio, including high-reliability SRAMs for industrial and automotive applications.

CY7S1061G30-10ZXIT belongs to Infineon's PowerSnooze™ SRAM product line, designed specifically for embedded systems demanding simultaneous high speed, ultra-low power, and hardware-level data integrity-targeting industrial automation, medical instrumentation, and transportation control.

FAQ

Does CY7S1061G30-10ZXIT support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to memory. The corrected data appears on I/O lines, and the ERR pin pulses to signal the event-leaving correction logging and recovery strategy to the host system firmware.

What is the maximum clock frequency supported for continuous read/write cycling?

The device has no internal clock; it is asynchronous. Maximum sustained operation is determined by tCYC (cycle time), specified as 10 ns minimum for 2.2–3.6 V operation-enabling up to 100 MHz burst access when interfaced with appropriate address setup/hold timing from the controller.

Can the ERR pin be left unconnected if ECC functionality is unused?

Yes. The ERR pin is open-drain and inactive (high-impedance) when no correction occurs. If ECC monitoring is not required, the pin may be left floating or tied to VCC via a pull-up resistor-no functional impact on memory operation or power consumption.

Is the 48-ball VFBGA package of CY7S1061G30-10ZXIT compatible with standard reflow profiles?

Yes. The part is qualified for lead-free reflow per J-STD-020D, with peak temperature up to 260 °C and time above liquidus of 60–150 seconds. Its 0.5 mm ball pitch and 1.0 mm profile support standard Type III stencil printing and automated optical inspection.

CY7S1061G30-10ZXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY7S1061G30-10ZXIT FAQ

1.How can I place an order for CY7S1061G30-10ZXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7S1061G30-10ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7S1061G30-10ZXIT reliable?

The price and inventory of CY7S1061G30-10ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1061G30-10ZXIT is usually 5 days.

3.What payment methods are accepted for CY7S1061G30-10ZXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1061G30-10ZXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7S1061G30-10ZXIT?

CY7S1061G30-10ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7S1061G30-10ZXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7S1061G30-10ZXIT?

For technical support, including CY7S1061G30-10ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1061G30-10ZXIT requirements.

6.How does Aetrix verify that CY7S1061G30-10ZXIT is sourced from the original manufacturer or authorized distributors?

All CY7S1061G30-10ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1061G30-10ZXIT meets industry standards.

7.What is the process for return or replacement of CY7S1061G30-10ZXIT?

All CY7S1061G30-10ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1061G30-10ZXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7S1061G30-10ZXIT part is unused and in its original packaging.

Return procedure for CY7S1061G30-10ZXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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