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Infineon Technologies CY7S1061GE-10ZXI
- Part No.:
- CY7S1061GE-10ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY7S1061GE-10ZXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,085
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Product details
Overview
CY7S1061GE-10ZXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports 22 µA max deep-sleep current, and features an ERR pin for single-bit error detection/correction. It is used in industrial control systems requiring reliable data retention during low-power states.
For engineers reviewing the CY7S1061GE-10ZXI datasheet, CY7S1061GE-10ZXI pinout, CY7S1061GE-10ZXI application, or CY7S1061GE-10ZXI equivalent, key selection criteria include ECC support, multi-voltage operation (1.65–3.6 V and 4.5–5.5 V), byte-enable write control (BHE/ BLE), Deep Sleep pin behavior, and VFBGA/TSOP package compatibility.
Technical Context
This SRAM implements a synchronous, fast-access memory array with on-die ECC logic that detects and corrects single-bit errors during read cycles-signaled via the dedicated ERR output. The device supports dual chip enable (CE1/CE2) and independent byte write enables (BHE for I/O8–I/O15, BLE for I/O0–I/O7), enabling precise 8-bit or 16-bit data transfers without external logic.
PowerSnooze™ operates through the DS pin: asserting DS LOW places the device in deep-sleep mode with ≤22 µA current draw while retaining data at 1.0 V, and de-asserting DS HIGH restores full operation. It does not perform automatic write-back on error correction-error handling is left to system-level firmware.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 16 Mbit (1,048,576 × 16), enabling 2 MB of word-addressable storage for real-time buffering or configuration tables. |
| Access time (tAA) | 10 ns at 2.2–3.6 V, supporting high-speed microcontroller or FPGA interface timing at up to 100 MHz. |
| Deep-sleep current (IDS) | ≤22 µA max, allowing battery-backed operation for months in industrial monitoring nodes. |
| VCC operating range | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V-supports legacy 5 V, modern 3.3 V, and ultra-low-voltage 1.8 V systems. |
| ECC capability | Detects and corrects single-bit errors per 16-bit word; ERR pin pulses high for one cycle upon correction event. |
| Data retention voltage | 1.0 V minimum, permitting extended hold time during brown-out or backup power transitions. |
| I/O compatibility | TTL-compatible inputs/outputs, eliminating level-shifter requirements in mixed-voltage designs. |
Pinout & Package
The CY7S1061GE-10ZXI is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant and Pb-free. Pinout matches Figure 2 in datasheet 001-79707 Rev. *N, with ERR located at ball A2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address inputs | 20-bit address bus supporting full 1 M-word decoding; no internal address multiplexing required. |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; high-impedance state when CE, OE, BHE, and BLE are inactive. |
| CE / CE1 & CE2 | Chip enable control | Single CE (CY7S1061G) or dual CE1/CE2 (CY7S1061GE) logic enables memory access only when asserted correctly. |
| WE | Write enable | Active-Low signal initiating write cycle; latches data on rising edge of WE when CE and OE are active. |
| OE | Output enable | Active-Low control for read data output; disables outputs when de-asserted, regardless of CE state. |
| BLE / BHE | Byte write enables | BLE controls I/O0–I/O7; BHE controls I/O8–I/O15-enabling independent 8-bit writes without masking logic. |
| DS | Deep Sleep input | Active-Low entry into ultra-low-power retention mode; requires external pull-up for normal operation. |
| ERR | Error indication output | Open-drain output pulsed high for one clock cycle when ECC corrects a single-bit error during read access. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | On-die single-bit error detection and correction per 16-bit word, reducing system-level error-handling overhead. |
| PowerSnooze™ Deep Sleep | Hardware-controlled retention mode with ≤22 µA current draw and 1.0 V minimum retention voltage. |
| Multi-voltage operation | Three discrete VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) allow drop-in replacement across legacy and next-gen platforms. |
| Byte-select write architecture | Dedicated BLE/BHE pins enable true 8-bit writes without external gating or data masking circuitry. |
| TTL-compatible I/O | Eliminates need for level translators when interfacing with 3.3 V or 5 V microcontrollers and FPGAs. |
Applications
| Industrial PLC Data Buffering | Railway Signaling Memory Backup |
|---|---|
|
Use Scenario: Storing real-time I/O status and configuration parameters in programmable logic controllers during mains interruption. IC Role / Device Role / Timing Role: Nonvolatile buffer with ECC-protected word-wide reads/writes and 10 ns access for deterministic scan-cycle timing. Use Value: Ensures data integrity across power-loss events using 1.0 V data retention and ≤22 µA deep-sleep current. |
Use Scenario: Retaining critical safety-critical state variables in track-side signaling units during grid fluctuations. IC Role / Device Role / Timing Role: ECC-enabled SRAM providing fault-tolerant storage for SIL-2 compliant logic states. Use Value: Single-bit error correction prevents silent data corruption in fail-safe decision paths without software intervention. |
| Medical Diagnostic Imaging Cache | Avionics Display Frame Buffer |
|
Use Scenario: Temporary storage of DICOM image tiles during real-time reconstruction in portable ultrasound systems. IC Role / Device Role / Timing Role: High-speed 16-bit interface SRAM supporting burst reads at >80 MB/s with deterministic latency. Use Value: 10 ns tAA and TTL-compatible I/O simplify interface design with ARM Cortex-A series SoCs. |
Use Scenario: Holding rendered display frames in cockpit multifunction displays where EMI resilience and reliability are mandatory. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with ECC and deep-sleep for power-gating during standby modes. Use Value: VFBGA package minimizes board area; multi-voltage support eases integration with ARINC-653 avionics power rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No integrated ECC; 10 ns access at 3.3 V only; 35 µA standby (no deep-sleep mode). | Lacks hardware error correction and ultra-low-power retention-requires external error-checking or higher-power backup schemes. | Select when cost sensitivity outweighs ECC requirement and system already implements software CRC or redundancy. |
| AS6C1008-10TIN | 1 M × 8 organization; no ERR pin; 25 µA standby; no PowerSnooze™ or multi-voltage support. | Requires two devices for 16-bit width; lacks deep-sleep and ECC-unsuitable for safety-critical or battery-constrained use. | Consider only for space-constrained 8-bit bus systems where ECC and ultra-low-power sleep are not required. |
Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, the CY7S1061GE-10ZXI uniquely combines ECC, deep-sleep, and triple-voltage operation-making it the only choice for industrial and transportation systems needing simultaneous data integrity, low-power retention, and legacy/new-platform interoperability.
Availability
CY7S1061GE-10ZXI is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling units, medical imaging subsystems, and avionics displays requiring stable component supply across long product lifecycles.
Supply support for CY7S1061GE-10ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions acquired from Cypress Semiconductor.
The CY7S1061GE belongs to Infineon's industrial-grade SRAM portfolio, designed specifically for mission-critical embedded systems demanding ECC protection, ultra-low-power retention, and multi-voltage interoperability in harsh environments.
FAQ
Does CY7S1061GE-10ZXI support automatic error correction write-back?
No. The device detects and corrects single-bit errors during read cycles and asserts the ERR pin, but it does not automatically write the corrected data back to memory. System firmware must handle any required write-back or logging based on the ERR signal pulse.
What is the function of the DS pin, and how is it controlled?
The DS (Deep Sleep) pin is an active-Low input that places the device into ultra-low-power data retention mode when driven LOW. It must be pulled HIGH (typically via external resistor) during normal operation. In Deep Sleep, all I/Os enter high-impedance state and ICC drops to ≤22 µA.
Can CY7S1061GE-10ZXI operate across multiple voltage domains simultaneously?
No. The device operates within one of three discrete VCC ranges (1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V) at a time. VCC must be stable within the selected range; mixing voltages across I/O and core is not supported. Voltage translation is required for mixed-domain interfaces.
Is the ERR pin open-drain, and what drive strength does it require?
Yes, the ERR pin is open-drain and requires an external pull-up resistor (typically 4.7 kΩ to VCC). It pulses HIGH for one clock cycle upon successful ECC correction during a read access, and remains LOW otherwise-no internal pull-up is provided.
CY7S1061GE-10ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY7S1061GE-10ZXI FAQ
1.How can I place an order for CY7S1061GE-10ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1061GE-10ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1061GE-10ZXI reliable?
The price and inventory of CY7S1061GE-10ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1061GE-10ZXI is usually 5 days.
3.What payment methods are accepted for CY7S1061GE-10ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1061GE-10ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1061GE-10ZXI?
CY7S1061GE-10ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1061GE-10ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1061GE-10ZXI?
For technical support, including CY7S1061GE-10ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1061GE-10ZXI requirements.
6.How does Aetrix verify that CY7S1061GE-10ZXI is sourced from the original manufacturer or authorized distributors?
All CY7S1061GE-10ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1061GE-10ZXI meets industry standards.
7.What is the process for return or replacement of CY7S1061GE-10ZXI?
All CY7S1061GE-10ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1061GE-10ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1061GE-10ZXI part is unused and in its original packaging.
Return procedure for CY7S1061GE-10ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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